Construction of a film on a semiconductor wafer

• US 20010025205A1
• Filed: 12/15/2000
• Published: 09/27/2001
• Est. Priority Date: 11/14/1994
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chern, Chyi, Danek, Michal, Raaijmakers, Ivo, Smith, David C., Littau, Karl, Mosely, Roderick C., Liao, Marvin
• Granted Patent: US 6,444,036 B2
• Time in Patent Office: Days
• US Class Current: 700/121
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4581 characterised by material of construction or surface finish of the means for supporting the substrate
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: C23C 16/481 by radiant heating of the substrate
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 2237/336 Changing physical properties of treated surfaces
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01L 21/28512 on semiconductor bodies comprising elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76856 by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/76862 Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
• CPC Class Codes: H01L 21/76864 Thermal treatment

Abstract

The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Claims

1. A method for constructing a film on a semiconductor wafer, said method comprising:

(a) depositing a layer of material on said wafer; and

(b) following said step (a) plasma annealing said layer of material so as to reduce a resistivity of said layer of material.

2. The method of

claim 1

, wherein said step (b) includes the steps of:

exposing said layer of material to an environment containing ions; and

electrically biasing said layer of material to cause said ions from said environment to impact said layer of material.

3. The method of

claim 2

, wherein said step of exposing said layer of material to said environment containing ions includes the steps of:

providing a gas; and

providing energy to said gas.

4. The method of

claim 3

, wherein said step of providing energy to said gas includes the step of:

providing a first rf signal to a first electrode on a first side of said wafer.

5. The method of

claim 4

, wherein said step of providing energy to said gas further includes the step of:

providing a second rf signal to a second electrode on a second side of said wafer.

6. The method of

claim 5

, wherein said first rf signal is substantially 180 degrees out of phase with said second rf signal.

7. The method of

claim 4

, wherein said gas contains at least one gas selected from the group consisting of nitrogen, hydrogen, argon, helium, and ammonia.

8. The method of

claim 4

, wherein said gas includes a noble gas.

9. The method of

claim 7

, wherein said material is a binary metal nitride.

10. The method of

claim 9

, wherein said binary metal nitride includes at least one material selected from the group consisting of titanium, tantalum, tungsten, and zirconium.

11. The method of

claim 1

, wherein said step (a) and said step (b) are both performed in a single chamber and without removing the wafer from the chamber between beginning said step (a) and completion of said step (b).

12. The method of

claim 1

, wherein said step(a) is performed using chemical vapor deposition.

13. The method of

claim 12

, wherein said layer of material is deposited by thermal decomposition of a metallo-organic compound.

14. The method of

claim 1

, further including the step of:

(c) repeating said step (a) and said step (b).

15. The method of

claim 1

, wherein said step (b) includes the steps of:

performing a first plasma annealing of said layer of material; and

performing a second plasma annealing of said layer of material after performing said first plasma annealing.

16. The method of

claim 15

, wherein said step of performing said first plasma annealing includes the steps of:

exposing said layer of material to a first environment containing ions; and

electrically biasing said layer of material to cause said ions from said first environment to impact said layer of material.

17. The method of

claim 16

, wherein said step of performing said second plasma annealing includes the steps of:

exposing said layer of material to a second environment containing ions; and

electrically biasing said layer of material to cause said ions from said second environment to impact said layer of material.

18. The method of

claim 17

, wherein said step of exposing said layer of material to a first environment containing ions includes the steps of:

providing a first gas, and

providing energy to said first gas to generate a first plasma, and

wherein said step of exposing said layer of material to a second environment containing ions includes the steps of;

providing a second gas, and

providing energy to said second gas to generate a second plasma.

19. The method of

claim 18

, wherein:

said step of providing energy to said first gas includes the sub-steps of;

providing a first rf signal to a first electrode on a first side of said wafer, and

providing a second rf signal to a second electrode on a second side of said wafer, and

wherein said step of providing energy to said second gas includes the sub-steps of;

providing a third rf signal to said first electrode on said first side of said wafer, and

providing a fourth rf signal to said second electrode on said second side of said wafer.

20. The method of

claim 19

, wherein said first rf signal is substantially 180 degrees out of phase with said second rf signal and said third rf signal is substantially 180 degrees out of phase with said fourth rf signal.

21. The method of

claim 18

, wherein said first gas contains at least one gas selected from the group consisting of nitrogen, hydrogen, argon, helium, and ammonia.

22. The method of

claim 18

, wherein said second gas contains at least one gas selected from the group consisting of nitrogen, helium, neon, and argon.

23. The method of claim of

claim 15

, wherein said step(a) is performed using chemical vapor deposition.

24. The method of

claim 23

, wherein said layer of material is a binary metal nitride.

25. The method of

claim 24

, further including the step of:

(c) repeating said step(a) and said step (b).

26. The method of

claim 15

, wherein said step (a) and said step (b) are both performed in a chamber without removing the wafer from the chamber between initiating said step (a) and completing said step (b).

27. The method of

claim 1

, further including the step of:

(c) oxidizing said layer of material following said step (b).

35. The method of

claim 1

, further including the step of:

(c) exposing said layer of material to a gas containing silicon; and

(d) heating said layer of material to cause said silicon to react with said layer of material.

36. The method of

claim 35

, wherein said step (c) and said step (d) are performed following said step (b).

37. The method of

claim 35

, wherein said step (c) and said step (d) are performed following said step (a) and prior to said step (b).

38. The method of

claim 35

, wherein said gas containing silicon is silane.

39. The method of

claim 35

, further including the step of:

(e) repeating said step (a), said step (b), said step (c), and said step (d).

40. The method of

claim 35

, further including the steps of:

(e) depositing a cap layer of said material on said layer of material following all of said steps (a), (b), (c) and (d); and

(f) annealing said cap layer of said material.

41. The method of

claim 35

, wherein said step (a), said step (b), said step (c), and said step (d) are all performed in a chamber without removing the wafer from the chamber between initiating said step (a) and completing said step (d).

42. The method of

claim 35

, wherein said layer of material is deposited using chemical vapor deposition.

43. The method of

claim 42

, wherein said material is a binary metal nitride.

44. The method of

claim 43

, wherein said binary metal nitride includes at least one material selected from the group consisting of titanium, tantalum, tungsten, and zirconium.

45. The method of

claim 42

, wherein said step (a), said step (b), said step (c) and said step (d) are all performed in a chamber without removing the wafer from the chamber between initiating said step (a) and completing said step (d).

46. The method of

claim 1

, further including the step of:

(c) exposing said layer of material to an environment containing silicon ions.

47. The method of

claim 46

, further including the step of:

(d) electrically biasing said layer of material to cause said silicon ions to impact said layer of material.

48. The method of

claim 1

, wherein said material is a ternary metal silicon nitride.

49. The method of

claim 48

, wherein said ternary metal silicon nitride includes at least one material selected from the group consisting of titanium, tantalum, tungsten, and zirconium.

28. The method of said step 27, wherein said step (a), said step (b), and said step (c) are all performed in a single chamber.

29. The method of

claim 28

, wherein the wafer is placed in said chamber before initiating said step (a) and is not removed from said chamber until said step (c) is completed.

30. The method of

claim 28

, wherein said step (c) includes the steps of:

exposing said layer of material to an environment containing oxygen ions; and

electrically biasing said layer of material to cause said oxygen ions from said environment to impact said layer of material.

31. The method of

claim 30

, wherein said step of exposing said layer of material to said environment containing oxygen ions includes the steps of:

exposing said layer of material to a gas containing oxygen; and

generating a plasma.

32. The method of

claim 31

, wherein said plasma is generated for approximately 20 seconds.

33. The method of

claim 31

, wherein said step of generating said plasma includes the steps of:

providing a first rf signal to a first electrode on a first side of said wafer; and

providing a second rf signal to a second electrode on a second side of said wafer.

34. The method of

claim 33

, wherein said first rf signal is substantially 180 degrees out of phase with said second rf signal.

50. A method for constructing a diffusion barrier on a wafer, said method comprising the steps of:

(a) placing said wafer in a processing chamber;

(b) depositing a layer of material on said wafer, while said wafer is in said processing chamber; and

(c) following said step (b) plasma annealing said deposited layer of material, while said wafer is in said processing chamber.

51. The method of

claim 50

, wherein said step (c) includes the steps of:

exposing said layer of material to an environment containing ions; and

electrically biasing said layer of material to cause said ions to impact said layer of material.

52. The method of

claim 51

, wherein said step of exposing said layer of material to an environment containing ions, includes the steps of:

providing a gas; and

providing energy to said gas to generate a plasma.

53. The method of

claim 52

, wherein said gas contains at least one gas selected from the group consisting of nitrogen, hydrogen, argon, helium, and ammonia.

54. The method of

claim 50

, wherein said step (b) is performed using thermal chemical vapor deposition.

55. The method of

claim 50

, wherein said step(c) includes the steps of:

exposing said layer of material to a first environment containing ions;

electrically biasing said layer of material to cause said ions in said first environment to impact said layer of material;

ceasing to expose said layer of material to said first environment containing ions;

exposing said layer of material to a second environment containing ions after ceasing to expose said layer of material to said first environment containing ions; and

electrically biasing said layer of material to cause said ions from said second environment to impact said layer of material.

56. The method of

claim 55

, wherein:

said step of exposing said layer of material to a first environment containing ions includes the sub-steps of;

providing a first gas; and

providing energy to said first gas to generate a first plasma; and

wherein said step of exposing said layer of material to a second environment containing ions includes the sub-steps of;

providing a second gas; and

providing energy to said second gas to generate a second plasma.

57. The method of

claim 56

, wherein said second gas contains at least one gas selected from the group consisting of nitrogen, helium, neon, and argon.

58. The method of

claim 55

, wherein said step (b) is performed using thermal chemical vapor deposition.

59. The method of

claim 50

further including the step of:

(d) following said step (c) generating a plasma containing oxygen ions, while said wafer is in said processing chamber; and

(e) electrically biasing said layer of material to cause said oxygen ions to impact said layer of material, while said wafer is in said processing chamber.

60. The method of

claim 59

, wherein said step (e) includes the step of:

providing a first rf signal to a first electrode on a first side of said wafer.

61. The method of

claim 60

, wherein said first electrode is a wafer support.

62. The method of

claim 61

, wherein said step (e) further includes the step of:

providing a second rf signal to a second electrode on a second side of said wafer.

63. The method of

claim 62

, wherein said second electrode is a showerhead support.

64. The method of

claim 63

, wherein said wafer support is a susceptor.

65. The method of

claim 50

, further including the step of:

(d) exposing said layer of material to a gas containing silicon, while said wafer is in said processing chamber; and

(e) heating said layer of material to cause said silicon to react with said material while said wafer is in said processing chamber.

66. The method of

claim 65

, wherein said gas containing silicon is silane.

67. The method of

claim 65

, further including the step of:

(f) repeating said step (b), said step (c), said step (d), and said step (e).

68. The method of

claim 65

, further including the steps of:

(f) following said step (e) depositing a cap layer of said material; and

(g) annealing said cap layer of said material.

69. The method of

claim 50

, further including the step of:

(d) exposing said layer of barrier material to an environment containing silicon ions, while said wafer is in said processing chamber.

70. The method of

claim 69

, further including the step of:

(e) electrically biasing said layer of material to cause said silicon ions to impact said layer of material, while said wafer is in said processing chamber.

71. The method of

claim 70

, further including the steps of:

(f) following said step (e) depositing a cap layer of said material; and

(g) annealing said cap layer of said material.

72. The method of

claim 50

, wherein said material is a ternary metal silicon nitride.

73. The method of

claim 72

, wherein said ternary metal silicon nitride includes at least one material selected from the group consisting of titanium, tantalum, tungsten, and zirconium.

74. A method for constructing a film on a wafer, said method comprising:

(a) placing said wafer in a processing chamber;

(b) forming a layer of material on said wafer, while said wafer is in said processing chamber; and

(c) oxidizing said layer of material, while said wafer is in said processing chamber.

75. The method of

claim 74

, wherein said film is a diffusion barrier.

76. The method of

claim 74

, wherein said step (b) includes the steps of:

depositing said layer of material on said wafer;

exposing said layer of material to an environment containing ions; and

electrically biasing said layer of material to cause said ions from said environment to impact said layer of material.

77. The method of

claim 76

, wherein said step of exposing said layer of material to said environment containing ions includes generating a plasma.

78. The method of

claim 76

, wherein said step of depositing said layer of material is achieved through chemical vapor deposition.

79. The method of

claim 74

, wherein said material is a binary metal nitride.

80. The method of

claim 79

, wherein said binary metal nitride includes at least one material selected from the group consisting of titanium, tantalum, tungsten, and zirconium.

81. The method of

claim 74

, wherein said step (c) includes the steps of:

exposing said layer of material to an environment containing oxygen ions; and

electrically biasing said layer of material to cause said oxygen ions from said environment to impact said layer of material.

82. The method of

claim 81

, wherein the step of exposing said layer of material to said environment containing oxygen ions includes the steps of:

exposing said layer of material to a gas containing oxygen; and

generating a plasma.

83. The method of

claim 82

, wherein said plasma is generated for approximately 20 seconds.

84. The method of

claim 82

, wherein said step of generating said plasma includes the step of:

providing a first rf signal to a wafer support on a first side of said wafer.

85. The method of

claim 84

, wherein said step of generating said plasma further includes the step of:

providing a second rf signal to a second electrode on a second side of said wafer.

86. The method of

claim 85

, wherein said first rf signal is substantially 180 degrees out of phase with said second rf signal.

87. The method of

claim 85

, wherein said second electrode is a showerhead.

88. The method of

claim 87

, wherein said wafer support is a susceptor.

89. The method of

claim 74

, wherein said step (c) includes the steps of:

exposing said layer of material to an environment containing oxygen; and

heating said layer of material to cause said oxygen from said environment to react with said layer of material.

90. The method of

claim 89

, wherein said film is a diffusion barrier.

91. A method for constructing a film on a wafer, said method comprising the step of:

(a) depositing a layer of material on said wafer;

(b) annealing said layer of material; and

(c) exposing said layer of material to a gas containing silicon.

92. The method of

claim 91

, wherein said step (b) includes the steps of:

exposing said layer of material to an environment containing ions after depositing said layer of material; and

electrically biasing said layer of material to cause said ions from said environment to impact said layer of material, after depositing said layer of material.

93. The method of

claim 92

, wherein said step (b) is performed following said step (a).

94. The method of

claim 92

, wherein said step (c) includes the steps of:

providing a gas containing silicon; and

heating said layer of material to cause said silicon to react with said layer of material.

95. The method of

claim 94

, wherein said gas containing silicon is silane.

96. The method of

claim 92

, further including the step of:

(d) repeating said step (a), said step (b), and said step (c).

97. The method of

claim 92

, further including the steps of:

(d) following said step (c) depositing a cap layer of said material on said layer of material; and

(e) annealing said cap layer of said material.

98. The method of

claim 97

, wherein said step of depositing said layer of material is performed using chemical vapor deposition.

99. The method of

claim 97

, wherein said step (a) is performed in a chamber, and said step (b) is performed in said chamber, and said step (c) is performed in said chamber.

100. The method of

claim 99

, wherein the wafer is placed in said chamber before initiating said step (a) and is not removed from said chamber until after completing said step (c).

101. A processor readable storage medium having program code embodied therein, said program code for controlling a chamber during a construction of a film on a semiconductor wafer, wherein said chamber includes a gas panel, a heating element, a pressure control unit and an rf signal source, said program code including:

a first program code, said first program code instructs a processor to provide signals to said gas panel, said heating element and said pressure control unit to cause a layer of material to be deposited on a wafer in said chamber;

a second program code, said second program code instructs said processor to provide signals to said gas panel, said heating element, said pressure control unit, and said rf signal source to cause said layer of material to be plasma annealed for a first time; and

a third program code, said third program code instructs said processor to provide signals to said gas panel, said heating element, said pressure control unit, and said rf signal source to cause said layer of material to be plasma annealed for a second time.

102. The processor readable storage medium of

claim 101

, wherein said second program code instructs said processor to cause said gas panel to provide at least one gas selected from the group consisting of nitrogen, hydrogen, argon, helium, and ammonia, and wherein said third program code instructs said processor to cause said gas panel to provide at least one gas selected from the group consisting of nitrogen, helium, neon, and argon.

103. A processor readable storage medium having program code embodied therein, said program code for controlling a chamber during a construction of a film on a semiconductor wafer, wherein said chamber includes a gas panel, a heating element, a pressure control unit and an rf signal source, said program code including:

a first program code, said first program code instructs a processor to provide signals to said gas panel, said heating element and said pressure control unit to cause a layer of material to be deposited on a wafer in said chamber;

a second program code, said second program code instructs said processor to provide signals to said gas panel, said heating element, said pressure control unit, and said rf signal source to cause said layer of material to be plasma annealed; and

a third program code, said third program code instructs said processor to provide signals to said gas panel, said heating element, said pressure control unit, and said rf signal source to cause said layer of material to be oxidized.

104. The processor readable storage medium of

claim 103

, wherein said second program code instructs said processor to cause said rf signal source to provide a signal to a first electrode on a first side of said wafer and a second signal to a second electrode on a second side of said wafer.

105. The processor readable storage medium of

claim 104

, wherein said first signal is substantially 180 degrees out of phase with said second signal.

106. A processor readable storage medium having program code embodied therein, said program code for controlling a chamber during a construction of a film on a semiconductor wafer, wherein said chamber includes a gas panel, a heating element, a pressure control unit and an rf signal source, said program code including:

a first program code, said first program code instructs a processor to provide signals to said gas panel, said heating element and said pressure control unit to cause a layer of material to be deposited on a wafer in said chamber;

a second program code, said second program code instructs said processor to provide signals to said gas panel, said heating element, said pressure control unit, and said rf signal source to cause said layer of material to be plasma annealed; and

a third program code, said third program code instructs said processor to provide signals to said gas panel, said heating element, and said pressure control unit to cause said layer of material to be silicon stuffed.

107. The processor readable storage medium of

claim 106

, wherein said third program code instructs said processor to cause said gas panel to provide silane.

108. A processor readable storage medium having program code embodied therein, said program code for controlling a chamber during a construction of a film on a semiconductor wafer, wherein said chamber includes a gas panel, a heating element, a pressure control unit and an rf signal source, said program code including:

a first program code, said first program code instructs a processor to provide signals to said gas panel, said heating element and said pressure control unit to cause a layer of material to be deposited on a wafer in said chamber, wherein said gas panel is instructed to provide a precursor gas for depositing a ternary metal silicon nitride; and

a second program code, said second program code instructs said processor to provide signals to said gas panel, said heating element, said pressure control unit, and said rf signal source to cause said layer of material to be plasma annealed.

109. The processor readable storage medium of

claim 108

, wherein said ternary metal silicon nitride includes at least one material selected from the group consisting of titanium, tantalum, tungsten, and zirconium.