Circuits and methods using vertical, complementary transistors
First Claim
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1. An inverter, comprising:
- a first vertically configured transistor extending outwardly from a semiconductor substrate;
a second vertically configured transistor extending outwardly from a semiconductor substrate;
an electrical contact between source/drain regions of the first and second vertically configured transistors to provide an output for the inverter; and
a gate contact, the gate contact interconnecting the vertically configured transistors wherein the gate contact comprises an input to the inverter.
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Abstract
A method and structure for an improved, vertically configured inverter array is provided. The inverter includes a buried gate contact coupling the body regions of a complementary pair of transistors. An electrical contact couples the second source/drain regions of the complementary pair of transistors. The transistors are formed in vertical pillars of single crystalline semiconductor material.
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Citations
39 Claims
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1. An inverter, comprising:
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a first vertically configured transistor extending outwardly from a semiconductor substrate;
a second vertically configured transistor extending outwardly from a semiconductor substrate;
an electrical contact between source/drain regions of the first and second vertically configured transistors to provide an output for the inverter; and
a gate contact, the gate contact interconnecting the vertically configured transistors wherein the gate contact comprises an input to the inverter. - View Dependent Claims (2, 3, 4, 5)
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6. An inverter on a semiconductor substrate, comprising:
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a first transistor formed in a first pillar of single crystalline semiconductor material that extends outwardly from the substrate, the pillar having a number of sides, the first transistor having a body region and first and second source/drain regions that are vertically aligned, the first transistor further having a gate that is associated with a side of the first transistor;
a second transistor formed in a second pillar of single crystalline semiconductor material that extends outwardly from the substrate having a number of sides, the second transistor having a body region and first and second source/drain regions formed within the second pillar, the second transistor further having a gate that is associated with a side of the second transistor, wherein the transistors comprise a complementary pair;
a gate contact that is in communication with the body regions of both first and second transistors; and
a metal shunt forming an electrical contact between the first and second transistors. - View Dependent Claims (7, 8)
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9. An inverter array, comprising;
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multiple complementary pairs of transistors extending outwardly from a semiconductor substrate and having upper surfaces, each transistor in a pair having a vertically stacked body region and first and second source/drain regions, each transistor further having a gate;
an electrical contact between the second source/drain regions of the transistors in each complementary pair;
a plurality of isolation trenches extending parallel to and separating the multiple complementary pairs of transistors and between each transistor; and
a gate contact for each complementary pair of transistors, wherein the gate contact is shared between the complementary pair of transistors and wherein the gate contact communicates with the body region of each transistor in the complementary pair. - View Dependent Claims (10, 11, 12, 13, 14)
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15. An inverter array on a semiconductor substrate, comprising:
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multiple complementary pairs of transistors extending outwardly from the substrate having an upper surface, and each transistor in the pair having a vertically stacked body region between first and second source/drain regions;
a gate contact for each complementary pair of transistors, the gate contact coupling to the body region of each transistor in the complementary pair, and wherein the gate contact is below the upper surface of the multiple complementary pairs of transistors;
an electrical input coupling to the gate contact of each complementary pair;
an electrical contact between the complementary transistors in each pair of transistors; and
an electrical output coupling to each electrical contact. - View Dependent Claims (16, 17)
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18. An integrated logic circuit, comprising:
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multiple complementary pairs of transistors extending outwardly from the substrate having an upper surface, and further each transistor includes a vertically stacked body region between first and second source/drain regions;
a gate contact associated with each of the multiple complementary pairs, wherein the gate contact is shared between the complementary transistors, the gate contact coupling to the body region of each transistor in the pair, and wherein the gate contact is below the upper surface of the multiple complementary pairs of transistors, the gate contact providing an input such that each complementary pair of transistors forms an inverter;
an electrical contact between each complementary pair of transistors to provide an output such that each complementary pair of transistors forms an inverter; and
a metallization layer that selectively interconnects the inputs and outputs of the inverters to form a logic circuit that accepts inputs and produces one or more logical outputs.
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19. An input/output device, comprising:
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a functional circuit having a plurality of components;
a logic device coupled to the functional circuit, the logic device having at least one inverter, the inverter further comprising;
a complementary pair of transistors extending outwardly from a semiconducting substrate, each complementary pair having an upper surface, each transistor in the complementary pair having a vertically stacked body region between first and second source/drain regions, each transistor having a gate;
a gate contact coupling between the body region in the complementary pair of transistors in each pair, wherein the gate contact is below the upper surface of the multiple complementary pairs of transistors, the gate contact having an input for each inverter;
an electrical contact between the second source/drain regions in the complementary pair of transistors in each pair, the electrical contact having an output for the inverter; and
a metallization layer that selectively interconnects the inputs and outputs of the selected inverters in the array to implement the logical function form the functional circuit.
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20. A method of fabricating an inverter, the method comprising:
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forming a first vertically configured transistor, the first transistor extending outwardly from a semiconductor substrate;
forming a second vertically configured transistor, the second transistor extending outwardly from a semiconductor substrate;
forming an electrical contact between source/drain regions of the first and second vertically configured transistors to provide an output for the inverter; and
forming a gate contact, the gate contact interconnecting the vertically configured transistors wherein the gate contact comprises an input to the inverter. - View Dependent Claims (21, 22, 23, 24)
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25. A method of fabricating an inverter, comprising:
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forming a first transistor in a first pillar of single crystalline semiconductor material that extends outwardly from the substrate, the first pillar having a number of sides, the first transistor having a body region and first and second source/drain regions that are vertically aligned, the first transistor further having a gate that is associated with a side of the first transistor;
forming a second transistor in a second pillar of single crystalline semiconductor material that extends outwardly from the substrate, the second pillar having a number of sides, the second transistor having a body region and first and second source/drain regions that are vertically aligned, the second transistor further having a gate that is associated with a side of the second transistor;
forming a gate contact that communicates with the body regions of both first and second transistors; and
forming a metal contact between the first and second transistor types. - View Dependent Claims (26, 27, 28, 29)
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30. A method of fabricating an array of inverters, comprising:
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forming multiple complementary pairs of transistors extending outwardly from a semiconductor substrate and having upper surfaces, each transistor in a pair having a vertically stacked body region and a first and second source/drain regions, each transistor further having a gate;
forming an electrical contact between the transistors in each complementary pair;
forming a plurality of isolation trenches extending parallel to and between the multiple complementary pairs of transistors; and
forming a gate contact in each complementary pair of transistors, and wherein the gate contact communicates with the body region of each transistor in the pair. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37)
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38. A method of fabricating an array, comprising:
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forming alternating first source/drain region layers of differently doped semiconductor material extending outwardly from a semiconductor substrate;
forming alternating body region layers of differently doped semiconductor material on the first source/drain region layer;
forming alternating second source/drain region layers of differently doped semiconductor material on the body region layers;
forming a plurality of isolation trenches so as to form isolated pillars of semiconductor material, each including a first source/drain region, a body region and a second source/drain region for a transistor;
forming a gate contact disposed within at least one of the plurality of trenches, wherein the gate contact couples body regions of a complementary pair of transistors; and
connecting the second source/drain regions of the complementary transistors to form an inverter.
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39. A method of fabricating an array of inverters, comprising:
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implanting ions into a semiconductor substrate in an alternating parallel pattern so as to form alternating bars of differently doped semiconductor material;
selectively growing, upon the alternating bars, multiple epitaxial layers of differently doped silicon in order to create an alternating parallel pattern of differently doped vertically configured silicon material;
forming a plurality of orthogonally bisecting isolation trenches to form a pattern of differently doped vertically configured silicon pillars;
forming electrical contacts between complementary pairs of the differently doped vertically configured silicon pillars; and
forming gate contacts within at least one of the plurality of orthogonally bisecting isolation trenches that interconnects complementary pairs of differently doped vertically configured silicon pillars.
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Specification