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Vertical MOS transistor

  • US 20010025986A1
  • Filed: 01/23/2001
  • Published: 10/04/2001
  • Est. Priority Date: 03/22/2000
  • Status: Active Grant
First Claim
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1. A vertical MOS transistor comprising:

  • a semiconductor substrate of a first conductivity type;

    a first epitaxial growth layer of a second conductivity type formed on the semiconductor substrate;

    a second epitaxial growth layer of the first conductivity type formed on the first epitaxial growth layer;

    a trench formed so as to reach an inside of the semiconductor substrate through the second epitaxial growth layer and the first epitaxial growth layer;

    a gate oxide film formed along a surface of the second epitaxial growth layer and a wall surface of the trench;

    a gate filled in the trench so as to be surrounded by the gate oxide film;

    a drain layer of the first conductivity type formed on the surface of the second epitaxial growth layer and in a region a desired distance away from the gate;

    a gate electrode connected to the gate;

    a drain electrode connected to the drain layer; and

    a source electrode connected to the semiconductor substrate.

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