Method for manufacturing integrated structures including removing a sacrificial region
First Claim
1. A method for manufacturing integrated structures, comprising the steps of:
- forming a wafer including at least a semiconductor material substrate and a sacrificial region;
forming a semiconductor layer on the sacrificial region;
forming a barrier layer on the semiconductor layer and over portions of the wafer lateral of the sacrificial region;
forming an opening in the barrier layer over the semiconductor layer to expose an area of the semiconductor layer directly above the sacrificial region and leave barrier portions of the barrier layer laterally of the opening;
forming an etching mask on the semiconductor layer through the opening and on the barrier regions;
forming a hole through the etching mask and semiconductor layer; and
removing said sacrificial region through the hole while using said etching mask to protect the semiconductor layer, wherein said etching mask comprises silicon carbide or titanium nitride.
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Abstract
The method is based on the use of an etching mask comprising silicon carbide or titanium nitride for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a masking layer comprising silicon carbide or titanium nitride; defining photolithographically the masking layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.
87 Citations
16 Claims
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1. A method for manufacturing integrated structures, comprising the steps of:
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forming a wafer including at least a semiconductor material substrate and a sacrificial region;
forming a semiconductor layer on the sacrificial region;
forming a barrier layer on the semiconductor layer and over portions of the wafer lateral of the sacrificial region;
forming an opening in the barrier layer over the semiconductor layer to expose an area of the semiconductor layer directly above the sacrificial region and leave barrier portions of the barrier layer laterally of the opening;
forming an etching mask on the semiconductor layer through the opening and on the barrier regions;
forming a hole through the etching mask and semiconductor layer; and
removing said sacrificial region through the hole while using said etching mask to protect the semiconductor layer, wherein said etching mask comprises silicon carbide or titanium nitride. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for manufacturing an integrated microstructure device having a semiconductor material substrate, comprising following steps:
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forming a sacrificial region on the semiconductor material substrate;
forming a semiconductor material layer, the sacrificial region being positioned between the substrate and the semiconductor material layer;
forming an etching mask over the sacrificial region and the semiconductor material layer, said etching mask comprising silicon carbide or titanium nitride; and
removing the sacrificial region, wherein the step of forming the etching mask comprises;
forming a first masking layer, the first masking layer including silicon carbide or titanium nitride;
forming a second masking layer over the first masking layer;
photolithographically defining the first and second masking layers; and
removing parts of the first and second masking layer being photolithographically defined. - View Dependent Claims (13, 14, 15, 16)
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Specification