Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method a semiconductor device

• US 20010028038A1
• Filed: 04/04/2001
• Published: 10/11/2001
• Est. Priority Date: 04/04/2000
• Status: Abandoned Application

• Current Assignee: Advantest Corporation
• Original Assignee: Advantest Corporation
• Inventors: Haraguchi, Takeshi, Hamaguchi, Shinichi, Yasuda, Hiroshi
• Application Number:
  US09/824,775
• Publication Number:
  US 20010028038A1
• Time in Patent Office: Days
• US Class Current: 250/396ML
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01J 2237/0635 Multiple source, e.g. comb or array
• CPC Class Codes: H01J 2237/1205 Microlenses
• CPC Class Codes: H01J 37/3177 Multi-beam, e.g. fly's eye, comb probe

Abstract

An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, includes: a plurality of electron guns operable to generate the electron beams; a voltage controller, electrically connected to the electron guns, operable to apply different voltages to the electron guns; and a multi-axis electron lens operable to converge the electron beams independently of each other.

Claims

1. An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, comprising:

a plurality of electron guns operable to generate said plurality of electron beams;

a voltage controller, electrically connected to said plurality of electron guns, operable to apply different voltages to said plurality of electron guns; and

a multi-axis electron lens operable to converge said plurality of electron beams independently of each other.

2. An electron beam exposure apparatus as claimed in

claim 1

, wherein said voltage controller includes a means operable to apply said different voltages to said plurality of electron guns depending on magnetic filed intensities applied to said plurality of electron guns by said multi-axis electron lens.

3. An electron beam exposure apparatus as claimed in

claim 1

, wherein said voltage controller includes a means operable to apply said different voltages to said plurality of electron guns in such a manner that sides of cross sections of said plurality of electron beams are substantially parallel to each other.

4. An electron beam exposure apparatus as claimed in

claim 1

, wherein said voltage controller includes a means operable to apply said different voltages to said plurality of electron guns in such a manner that positions of focal points of said plurality of electron beams are substantially the same.

5. An electron beam exposure apparatus as claimed in

claim 1

, further comprising a further multi-axis electron lens operable to reduce cross sections of said electron beams.

6. An electron beam exposure apparatus as claimed in

claim 1

. further comprising an electron beam shaping unit that comprises:

a first shaping member having a plurality of first shaping openings operable to shape said plurality of electron beams;

a first shaping-deflecting unit operable to deflect said plurality of electron beams after passing through said first shaping member, independently of each other; and

a second shaping member having a plurality of second shaping openings operable to shape said plurality of electron beams after passing through said first shaping-deflecting unit to have desired shapes.

7. An electron beam exposure apparatus as claimed in

claim 6

, wherein said electron beam shaping unit further includes a second shaping-deflecting unit operable to deflect said plurality of electron beams deflected by said first shaping-deflecting unit independently of each other toward a direction substantially perpendicular to a surface of said wafer onto which said electron beams are incident,

wherein said electron beam shaping unit allows said plurality of electron beams deflected by said second shaping-deflecting unit to pass through said second shaping member so as to shape said electron beams to have said desired shapes.

8. An electron beam exposure apparatus as claimed in

claim 7

, wherein said second shaping member includes a plurality of shaping-member illumination areas onto which said electron beams deflected by the second shaping-deflecting unit are incident, and

said second shaping member includes said second shaping openings and other openings having different sizes from sizes of said second shaping openings in said shaping-member illumination area.

9. An electron beam exposure apparatus as claimed in

claim 6

, further comprising a further multi-axis electron lens operable to converge said plurality of electron beams generated by said plurality of electron guns to make said converged electron beams incident on said first shaping member,

wherein said first shaping member divides said electron beams after passing through said further multi-axis electron lens.

10. An electron beam exposure apparatus as claimed in

claim 1

, wherein a plurality of multi-axis electron lenses are provided.

11. An electron beam exposure apparatus as claimed in

claim 1

, wherein said multi-axis electron lens includes a plurality of magnetic conductive members arranged to be substantially parallel to each other, said magnetic conductive members having a plurality of openings that form a plurality of lens openings allowing said plurality of electron beams to pass therethrough.

12. An electron beam exposure apparatus as claimed in

claim 11

, wherein said magnetic conductive members include a plurality of dummy openings through which no electron beam passes.

13. An electron beam exposure apparatus as claimed in

claim 12

, wherein said plurality of dummy openings are provided in outer peripheries of areas of said magnetic conductive members where said plurality of lens openings are arranged.

14. An electron beam exposure apparatus as claimed in

claim 11

, wherein said magnetic conductive members include said openings having different shapes.

15. An electron beam exposure apparatus as claimed in

claim 14

, wherein said magnetic conductive members include said openings having different sizes.

16. An electron beam exposure apparatus as claimed in

claim 14

, wherein at least one of said plurality of magnetic conductive members includes cut portions provided in outer peripheries of said openings.

17. An electron beam exposure apparatus as claimed in

claim 16

, wherein at least two of said plurality of magnetic conductive members include said cut portions on surfaces of said at least two magnetic conductive members, said surfaces being opposed to each other.

18. An electron beam exposure apparatus as claimed in

claim 14

, wherein at least one of said magnetic conductive members includes a magnetic conductive projection provided on a surface thereof between a predetermined one of said openings and another opening adjacent to said predetermined opening, said projection projecting from said surface of said at least one of said magnetic conductive members.

19. An electron beam exposure apparatus as claimed in

claim 11

, wherein said multi-axis electron lens further includes a coil part including a coil operable to generate a magnetic field and a coil magnetic conductive member provided in an area surrounding said coil.

20. An electron beam exposure apparatus as claimed in

claim 19

, wherein said coil magnetic conductive member is formed from a material having a different magnetic permeability from that of a material for said plurality of magnetic conductive members.

21. A fabrication method of a semiconductor device on a wafer, comprising:

applying different voltages to a plurality of electron guns to generate a plurality of electron beams;

performing focus adjustments with respect to said wafer for said plurality of electron beams by using a multi-axis electron lens for converging said electron beams independently of each other; and

exposing a pattern onto said wafer by illuminating said wafer with said plurality of electron beams.