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Merged logic and memory combining thin film and bulk Si transistors

  • US 20010028059A1
  • Filed: 05/18/2001
  • Published: 10/11/2001
  • Est. Priority Date: 12/08/1997
  • Status: Active Grant
First Claim
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1. A plurality of transistors made in two distinct semiconductor levels, a bulk silicon (Si) and a thin film Si level, in a single integrated circuit (IC) chip, and connected to form logic circuits in selected regions of the IC chip and to form static random access memory (SRAM) arrays in the remaining regions of the IC chip.

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