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Nonvolatile semiconductor memory device and process of production and write method thereof

  • US 20010030340A1
  • Filed: 04/06/2001
  • Published: 10/18/2001
  • Est. Priority Date: 11/04/1998
  • Status: Active Grant
First Claim
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1. A nonvolatile semiconductor memory device comprising a plurality of memory elements formed in the vicinity of the surface of a substrate, a plurality of word lines for driving the memory elements, and a plurality of bit lines, each of said plurality of memory elements including:

  • a semiconductor channel forming region formed in the vicinity of the surface of the substrate, a source region in contact with the channel forming region in the vicinity of the surface of the substrate, a drain region in contact with the channel forming region at a position facing the source region in the vicinity of the surface of the substrate, a gate insulating film including a tunnel insulating film formed on the channel forming region, a conductive gate electrode formed on the gate insulating film, and a charge storing means which is provided in the tunnel insulating film and in the gate insulating film and is planarly dispersed to the other neighbor charge storing means in the gate insulating film;

    a gate electrode of the plurality of memory elements being respectively connected to the plurality of word lines;

    a gate insulating film formed on the semiconductor channel forming region and comprising a Fowler-Nordheim (FN) type tunneling film which has a FN type tunneling electroconductivity and contains material having a dielectric constant greater than that of silicon oxide;

    a gate electrode formed on the gate insulating film; and

    a charge storing means, formed in the gate insulating film, and facing to the surface of the channel forming region.

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