Apparatus and method for mixing gases

• US 20010032668A1
• Filed: 01/19/2001
• Published: 10/25/2001
• Est. Priority Date: 02/04/2000
• Status: Active Grant

• Current Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA), Air Liquide America LP (Mitsubishi Chemical Group Corp.)
• Original Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
• Inventors: Xu, Yan, White, Charles A., Hall, Ben R., Doty, Dean L., Petton, Roger Q., Ross, Thomas P., Wynne, Reginald, Chesters, Stephen
• Granted Patent: US 6,772,781 B2
• Time in Patent Office: Days
• US Class Current: 137/93
• CPC Class Codes: G05D 11/132 by controlling the flow of the individual components G05D11/133 takes precedence
• CPC Class Codes: G05D 11/138 by sensing the concentration of the mixture, e.g. measuring pH value
• CPC Class Codes: Y10T 137/0329 Mixing of plural fluids of diverse characteristics or conditions
• CPC Class Codes: Y10T 137/0363 For producing proportionate flow
• CPC Class Codes: Y10T 137/2509 By optical or chemical property
• CPC Class Codes: Y10T 137/87249 Multiple inlet with multiple outlet
• CPC Class Codes: Y10T 137/87692 With common valve operator

Abstract

Provided are apparatuses and methods for mixing gases. The apparatuses are suitable for use in the manufacture of an electronic device. The apparatuses include a gas mixing manifold. A first, bulk gas source is connected to introduce a flow of a first gas to the manifold. A second gas source is connected to introduce a flow of a second gas to the manifold. The first and second gases are mixed in the manifold, thereby forming a gas mixture. A conduit is connected to one or more point of use for introducing a flow of the gas mixture thereto. The present invention is particularly applicable in the semiconductor manufacturing industry.

Claims

1. An apparatus for mixing gases, suitable for use in the manufacture of an electronic device, comprising:

(a) a gas mixing manifold;

(b) a first, bulk gas source connected to introduce a flow of a first gas to the manifold;

(c) a second gas source connected to introduce a flow of a second gas to the manifold, wherein the first and second gases are mixed in the manifold, thereby forming a gas mixture; and

(d) a conduit connected to one or more point of use for introducing a flow of the gas mixture thereto.

2. The apparatus according to

claim 1

, wherein the one or more point of use comprises one or more semiconductor processing tool.

3. The apparatus according to

claim 1

, further comprising a buffer vessel upstream of the one or more point of use.

4. The apparatus according to

claim 1

, wherein the first, bulk gas source is connected to introduce a continuous flow of the first gas to the manifold.

5. The apparatus according to

claim 1

, wherein the first, bulk gas source has a volume from about 40,000 ft³ to about 20,000,000 ft³.

6. The apparatus according to

claim 1

, wherein the second gas source is a bulk gas source.

7. The apparatus according to

claim 6

, wherein the second gas source has a volume from about 40,000 ft³ to about 20,000,000 ft³.

8. The apparatus according to

claim 6

, wherein the second gas source is connected to introduce a continuous flow of the second gas to the manifold.

9. The apparatus according to

claim 1

, further comprising a gas mixture vent conduit arranged upstream of the one or more point of use for removing a flow of the gas mixture from the apparatus.

10. The apparatus according to

claim 1

, further comprising:

(e) a first mass flow controller for controlling the flow rate of the first gas into the manifold;

(f) a second mass flow controller for controlling the flow rate of the second gas into the manifold; and

(g) a controller for controlling the first and/or second mass flow controllers.

11. A method for mixing gases, suitable for use in the manufacture of an electronic device, comprising:

(a) providing a gas mixing manifold;

(b) introducing a flow of a first gas to the manifold from a first, bulk gas source;

(c) introducing a flow of a second gas to the manifold from a second gas source, wherein the first and second gases are mixed in the manifold, thereby forming a gas mixture; and

(d) introducing a flow of the gas mixture to one or more point of use.

12. The method according to

claim 11

, wherein the one or more point of use comprising one or more semiconductor processing tool.

13. The method according to

claim 11

, wherein the gas mixture is introduced to a buffer vessel upstream of the one or more point of use.

14. The method according to

claim 11

, wherein the flow of the first gas is continuous.

15. The method according to

claim 11

, wherein the flow of the gas mixture introduced to the one or more point of use is continuous.

16. The method according to

claim 11

, wherein the bulk gas source has a volume from about 40,000 ft³ to about 20,000,000 ft³.

17. The method according to

claim 11

, wherein a flow of the gas mixture is removed upstream from the one or more point of use when the flow of the gas mixture to the one or more point of use is stopped.

18. The method according to

claim 11

, wherein the second gas source is a bulk gas source.

19. The method according to

claim 18

, wherein the flow of the first gas and the flow of the second gas are continuous.

20. The method according to

claim 18

, wherein the second gas source has a volume from about 40,000 ft³ to about 20,000,000 ft³.

21. The method according to

claim 11

, wherein the first gas and/or the second gas contains two or more gases.

22. The method according to

claim 11

, wherein the first and second gases are nitrogen and hydrogen, oxygen and helium or nitrogen and oxygen.

23. The method according to

claim 22

, wherein the first and second gases are nitrogen and hydrogen.

24. The method according to

claim 11

, further comprising:

(e) measuring the concentration of one or more gas species in the gas mixture; and

(f) controlling the flow of the first gas and/or the second gas based on the measured concentration of the one or more gas species, thereby maintaining a predetermined concentration of the gas mixture.