Semiconductor light-emitting device
First Claim
1. A semiconductor light-emitting device including a multiple quantum well structure for amplifying a light by current injection, said structure comprising well layers and barrier layers interposed between said well layers, wherein the number of well and barrier layers periodically changes in the light propagation direction in a partial or the whole region of said multiple quantum well structure, said multiple quantum well structure comprises, in said region, first multiple quantum well layers divided in said light propagation direction at a period corresponding to an integral multiple of the half wavelength of a propagating light in a medium, and second flat multiple quantum well layers, and at least one of the film characteristics and the film thickness of at least one of each barrier layer and each well layer in said first multiple quantum well layers is designed into a desired condition different from that in said second multiple quantum well layers.
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Abstract
In a semiconductor light-emitting device including an MQW diffraction grating structure mainly used in a gain-coupled DFB laser, the ratio of the gain coupling coefficient to the index coupling coefficient is increased by making each well layer in MQW-A thicker than that in MQW-B. Each well layer and each barrier layer in the MQW structure are made of different compositions of GaInAsP. This implements a semiconductor light-emitting device with high wavelength stability, which does not induce any mode hop even during modulation with high output power or even when external optical feedback is present.
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Citations
31 Claims
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1. A semiconductor light-emitting device including a multiple quantum well structure for amplifying a light by current injection, said structure comprising well layers and barrier layers interposed between said well layers, wherein
the number of well and barrier layers periodically changes in the light propagation direction in a partial or the whole region of said multiple quantum well structure, said multiple quantum well structure comprises, in said region, first multiple quantum well layers divided in said light propagation direction at a period corresponding to an integral multiple of the half wavelength of a propagating light in a medium, and second flat multiple quantum well layers, and at least one of the film characteristics and the film thickness of at least one of each barrier layer and each well layer in said first multiple quantum well layers is designed into a desired condition different from that in said second multiple quantum well layers.
Specification