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Semiconductor light-emitting device

  • US 20010032976A1
  • Filed: 03/30/2001
  • Published: 10/25/2001
  • Est. Priority Date: 04/21/2000
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device including a multiple quantum well structure for amplifying a light by current injection, said structure comprising well layers and barrier layers interposed between said well layers, wherein the number of well and barrier layers periodically changes in the light propagation direction in a partial or the whole region of said multiple quantum well structure, said multiple quantum well structure comprises, in said region, first multiple quantum well layers divided in said light propagation direction at a period corresponding to an integral multiple of the half wavelength of a propagating light in a medium, and second flat multiple quantum well layers, and at least one of the film characteristics and the film thickness of at least one of each barrier layer and each well layer in said first multiple quantum well layers is designed into a desired condition different from that in said second multiple quantum well layers.

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