Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same

• US 20010034097A1
• Filed: 01/19/2001
• Published: 10/25/2001
• Est. Priority Date: 09/29/1997
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lim, Hyun-Seok, Choi, Gil-Heyun, Kang, Sang-Bom, Jeon, In-Sang
• Granted Patent: US 6,348,376 B2
• Time in Patent Office: Days
• US Class Current: 438/253
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers

Abstract

A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film having low resistivity and a low content of Cl even with excellent step coverage can be formed at a temperature of 500° C. or lower, and a semiconductor capacitor having excellent leakage current characteristics can be manufactured. Also, a deposition speed, approximately 20 A/cycle, is suitable for mass production.

Claims

1. A method of forming a semiconductor capacitor by sequentially forming a lower conductive layer, a dielectric film and an upper conductive layer on the underlayer of a semiconductor substrate, wherein the process for forming a lower conductive layer and/or an upper conductive layer comprises the steps of:

(a) inserting a semiconductor substrate on which the underlayer on the dielectric film is formed, into a deposition chamber;

(b) admitting a metal source into the deposition chamber

(c) chemisorbing a first portion of the metal source onto the substrate, and physisorbing a second portion of the metal source onto the substrate;

(d) purging the metal source from the deposition chamber;

(e) admitting a nitrogen source into the deposition chamber;

(f) chemisorbing a first portion of the nitrogen source onto the substrate, and physisorbing a second portion of the nitrogen source onto the substrate;

(g) reacting the chemisorbed and physisorbed metal source with the chemisorbed and physisorbed nitrogen source to form a metal nitride film on the substrate; and

(h) purging the nitrogen source from the deposition chamber.

2. The method as claimed in

claim 1

, wherein the metal source is selected from the group consisting of TiCl₄, TiCl₃, TiI₄, TiBr₂, TiF₄, (C₅H₅)₂TiCl₂, ((CH₃)₅C₅)₂TiCl₂, C₅H₅TiCl₃, C₉H₁₀BCl₃N₆Ti, C₉H₇TiCl₃, (C₅(CH₃)₅)TiCl₃, TiCl₄(NH₃)₂, and (CH₃)₅C₅Ti(CH₃)₃, and the nitrogen source is NH₃.

3. The method as claimed in

claim 2

, wherein the deposition temperature in the steps (b) through (h) is between 400°

C. and 500°

C., and the pressure in the deposition chamber is 1 to 20 torr.

4. The method as claimed in

claim 1

, wherein TDEAT or TDMAT is used as the metal source, and NH₃ is used as the nitrogen source.

5. The method as claimed in

claim 4

, wherein the deposition temperature in the steps (b) through (h) is between 250°

C. and 400°

C. and the pressure in the deposition chamber is 0.1 to 10 torr.

6. The method as claimed in

claim 1

, wherein a material selected from the group consisting of TaBr₅, TaCl₅, TaF₅, TaI₅, and(C₅(CH₃)₅)TaCl₄ is used as the metal source, and NH₃ is used as the nitrogen source.

7. The method as claimed in

claim 6

, wherein the deposition temperature in the steps (b) through (h) is between 400°

C. and 500°

C., and the pressure in the deposition chamber is 1 to 20torr.

8. The method as claimed in

claim 1

, wherein the purge gas is Ar or N₂.

9. The method as claimed in

claim 1

, wherein 1-5 sccm of the metal source flows into the deposition chamber for 1 to 10 seconds, 5-200 sccm of the nitrogen source flows thereinto for 1 to 10 seconds, and 10-200 sccm of the purge gas flows thereinto for 1 to 10 seconds.

10. The method as claimed in

claim 1

, wherein an atmospheric gas, which is at least one selected from the group consisting of Ar, He and N₂, is continuously flowed into the deposition chamber during the steps (b) through (h), to maintain a constant pressure in the deposition chamber.

11. The method as claimed in

claim 1

, wherein the thickness of the lower and/or upper conductive layer is controlled by repeating the steps (b) through (h).