Method of manufacture of a crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor
First Claim
1. A process of forming an electrode comprising a capacitor core formed on a conductor sublayer formed on substrate, comprising:
- forming a mold from a stack of silicon dioxide layers which are alternatingly undoped, doped, and undoped on said sublayer with said stack comprising a bottom layer formed on top of said conductor sublayer and each additional layer in said stack formed on a previous one of said layers in said stack, patterning said silicon dioxide layers in said mold which are alternatingly doped and undoped to form an intercore, capacitor-core-shaping cavity in said stack of silicon dioxide layers reaching down through said stack to be bottom of said stack, differentially etching said silicon dioxide layers in said mold forming undercut edges in said doped silicon dioxide layers with said undoped silicon dioxide layers having cantilevered ribs projecting from said stacks into said cavity to complete said mold, deposit a second conductive layer into said cavity forming a capacitor core with counterpart cantilevered ribs with a complementary pattern to said mold and said capacitor core having a top surface, polish said capacitor core to remove said top surface of said core, and remove said mold.
1 Assignment
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Accused Products
Abstract
A capacitor core is formed on a semiconductor device with a first conductive layer in contact with a plug. A mold is formed from a stack of alternately doped and undoped silicon dioxide layers on the sublayer with the stack comprising a bottom layer formed on top of the sublayer and each additional layer in the stack formed on a previous one of the layers in the stack. Pattern the silicon dioxide layers in the mold which are alternatingly doped and undoped to form an intercore, capacitor-core-shaping cavity in the stack of silicon dioxide layers reaching down through the stack to be bottom of the stack. Then perform differential etching of the silicon dioxide layers in the mold. Form undercut edges in the doped silicon dioxide layers with the undoped silicon dioxide layers having cantilevered ribs projecting from the stacks into the cavity to complete the mold. Deposit a bulk or a thin film second monolithic conductive layer into the cavity to form a monolithic capacitor core with counterpart cantilevered ribs.
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Citations
39 Claims
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1. A process of forming an electrode comprising a capacitor core formed on a conductor sublayer formed on substrate, comprising:
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forming a mold from a stack of silicon dioxide layers which are alternatingly undoped, doped, and undoped on said sublayer with said stack comprising a bottom layer formed on top of said conductor sublayer and each additional layer in said stack formed on a previous one of said layers in said stack, patterning said silicon dioxide layers in said mold which are alternatingly doped and undoped to form an intercore, capacitor-core-shaping cavity in said stack of silicon dioxide layers reaching down through said stack to be bottom of said stack, differentially etching said silicon dioxide layers in said mold forming undercut edges in said doped silicon dioxide layers with said undoped silicon dioxide layers having cantilevered ribs projecting from said stacks into said cavity to complete said mold, deposit a second conductive layer into said cavity forming a capacitor core with counterpart cantilevered ribs with a complementary pattern to said mold and said capacitor core having a top surface, polish said capacitor core to remove said top surface of said core, and remove said mold. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A process of forming an electrode comprising a capacitor core formed on a conductor layer formed on a substrate,
forming a mold from a stack of silicon dioxide layers which are alternatingly doped and undoped on said sublayer with said stack comprising a bottom layer formed on top of said sublayer and each additional layer in said stack formed on a previous one of said layers in said stack, patterning said silicon dioxide layers in said mold which are alternatingly doped and undoped to form an intercore, capacitor-core-shaping cavity in said stack of silicon dioxide layers reaching down through said stack to be bottom of said stack, differentially etching said silicon dioxide layers in said mold forming undercut edges in said doped silicon dioxide layers with said undoped silicon dioxide layers having cantilevered ribs projecting from said stacks into said cavity to complete said mold, deposit a thin layer of a second conductive layer into said cavity forming a thin capacitor core with counterpart cantilevered ribs with a complementary pattern to said mold and said capacitor core having a top surface, deposit a layer filling said inner cavity, polish said capacitor core to remove said top surface of said core, and remove said photoresist and remove said mold.
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11. A process of forming an electrode comprising a capacitor core formed on a semiconductor device comprising:
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forming a sublayer of a conductor layer in contact with a plug which contacts a doped region in said semiconductor substrate, forming a mold from a stack of silicon dioxide layers which are alternatingly doped and undoped on said sublayer with said stack comprising a bottom layer formed on top of said sublayer and each additional layer in said stack formed on a previous one of said layers in said stack, patterning said silicon dioxide layers in said mold which are alternatingly doped and undoped to form an intercore, capacitor-core-shaping cavity in said stack of silicon dioxide layers reaching down through said stack to be bottom of said stack, differentially etching said silicon dioxide layers in said mold forming undercut edges in said doped silicon dioxide layers with said undoped silicon dioxide layers having cantilevered ribs projecting from said stacks into said cavity to complete said mold, deposit a second conductive layer into said cavity forming a capacitor core with counterpart cantilevered ribs with a complementary pattern to said mold and said capacitor core having a top surface, polish said capacitor core to remove said top surface of said core, and remove said mold. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A process of forming an electrode comprising a capacitor core formed on a semiconductor device comprising:
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forming a sublayer of a conductor layer in contact with a plug which contacts one of said region in said semiconductor substrate, forming a mold from a stack of silicon dioxide layers which are alternatingly doped and undoped on said sublayer with said stack comprising a bottom layer formed on top of said sublayer and each additional layer in said stack formed on a previous one of said layers in said stack, patterning said silicon dioxide layers in said mold which are alternatingly doped and undoped to form an intercore, capacitor-core-shaping cavity in said stack of silicon dioxide layers reaching down through said stack to be bottom of said stack, differentially etching said silicon dioxide layers in said mold forming undercut edges in said doped silicon dioxide layers with said undoped silicon dioxide layers having cantilevered ribs projecting from said stacks into said cavity to complete said mold, deposit a thin layer of a second conductive layer into said cavity forming a thin capacitor core with counterpart cantilevered ribs with a complementary pattern to said mold and said capacitor core having a top surface, deposit a layer filling said inner cavity;
polish said capacitor core to remove said top surface of said core;
remove said photoresist; and
remove said mold. - View Dependent Claims (18, 19, 20, 21, 23)
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24. A monolithic capacitor core formed on a substrate comprising:
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a sublayer comprising a first conductive layer formed on said substrate, and a second conductive layer formed into a monolithic monolithic capacitor core having cantilevered ribs projecting from exterior sidewalls of said monolithic core. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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31. A monolithic capacitor core formed on a semiconductor device comprising:
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a sublayer first conductive layer in contact with a plug which contacts one of said region in said semiconductor substrate, a second conductive layer formed into a monolithic capacitor core having cantilevered ribs projecting from exterior sidewalls of said monolithic core, said monolithic capacitor core having a cantilevered top surface projecting from said exterior sidewall of said monolithic core. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39)
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Specification