Nitride-based semiconductor device and manufacturing method thereof
First Claim
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1. A nitride-based semiconductor device, comprising:
- a substrate;
a first group III nitride-based semiconductor layer formed on said substrate and including gallium;
at least one set of layered structures formed on said first group III nitride-based semiconductor layer and including a super lattice multi-layer film and a second group III nitride-based semiconductor layer in this order; and
a third group III nitride-based semiconductor layer formed on said at least one set of layered structures and including a device region, said super lattice multi-layer film including at least one pair of alternately layered first and second films, said first film being made of a group III nitride-based semiconductor including at least indium and gallium and having a first lattice constant, said second film being made of a group III nitride-based semiconductor including at least aluminum and gallium and having a second lattice constant different from said first lattice constant.
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Abstract
In the manufacture of a semiconductor laser device, sequentially grown on a sapphire substrate in the following order are a buffer layer, a first undoped GaN layer, a first super lattice defect reducing layer, a second undoped GaN layer, a second super lattice defect reducing layer, a third undoped GaN layer, a third super lattice defect reducing layer and a fourth undoped GaN layer. A device structure is then formed thereon. The first to third super lattice defect reducing layers each include five pairs of InGaN and AlGaN films alternately placed on one another in this order.
40 Citations
16 Claims
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1. A nitride-based semiconductor device, comprising:
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a substrate;
a first group III nitride-based semiconductor layer formed on said substrate and including gallium;
at least one set of layered structures formed on said first group III nitride-based semiconductor layer and including a super lattice multi-layer film and a second group III nitride-based semiconductor layer in this order; and
a third group III nitride-based semiconductor layer formed on said at least one set of layered structures and including a device region, said super lattice multi-layer film including at least one pair of alternately layered first and second films, said first film being made of a group III nitride-based semiconductor including at least indium and gallium and having a first lattice constant, said second film being made of a group III nitride-based semiconductor including at least aluminum and gallium and having a second lattice constant different from said first lattice constant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a nitride-based semiconductor device, comprising the steps of:
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forming a first group III nitride-based semiconductor layer including gallium on a substrate;
forming at least one set of layered structures including a super lattice multi-layer film and a second group III nitride-based semiconductor layer in this order on said first group III nitride-based semiconductor layer; and
forming a third group III nitride-based semiconductor layer having a device region on said at least one set of layered structures, said step of forming said at least one set of layered structures comprising the step of forming said super lattice multi-layer film by forming at least one pair of first and second films alternately layered on one another, said first film being made of a group III nitride-based semiconductor including at least indium and gallium and having a first lattice constant, said second film being made of a group III nitride-based semiconductor including at least aluminum and gallium and having a second lattice constant different from said first lattice constant. - View Dependent Claims (13, 14, 15, 16)
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Specification