×

Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof

  • US 20010037761A1
  • Filed: 12/29/2000
  • Published: 11/08/2001
  • Est. Priority Date: 05/08/2000
  • Status: Active Grant
First Claim
Patent Images

1. A single crystal silicon wafer, the single crystal silicon wafer comprising:

  • a silicon wafer substrate having a central axis, a front surface and a back surface which are generally perpendicular to the central axis, a circumferential edge, and a radius extending from the central axis to the circumferential edge of the wafer, the back surface being free of an oxide seal and substantially free of a chemical vapor deposition process induced halo, the silicon wafer substrate comprising P-type or N-type dopant atoms; and

    an epitaxial silicon layer on the front surface of the silicon wafer substrate characterized by an axially symmetric region extending radially outwardly from the central axis toward the circumferential edge wherein the resistivity is substantially uniform, the radius of the axially symmetric region being at least about 80% of the length of the radius of the substrate, the epitaxial silicon layer comprising P-type or N-type dopant atoms.

View all claims
  • 17 Assignments
Timeline View
Assignment View
    ×
    ×