Gas barrier film
First Claim
1. A gas barrier film having a silicon oxide film formed by the plasma CVD method on the one side or both sides of a base material, wherein said silicon oxide film is composed of the rate of components that the number of oxygen atoms is from 170 to 200 and the number of carbon atoms is 30 or less to the number of silicon atoms of 100, and further has a peak position of IR absorption band based on the stretching vibration of Si-O-Si that exist between 1055 and 1065 cm−
- 1.
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Accused Products
Abstract
The purpose of the present invention is to provide a gas barrier film having extremely excellent gas barrier property while retaining the film thickness at a predetermined thickness. A gas barrier film having a silicon oxide film formed by the plasma CVD method on the one side or both sides of a base material is provided, the silicon oxide film is characterized in that the film is comprised of the rate of components that the number of Oxygen atoms is from 170 to 200 and the number of Carbon atoms is 30 or less to the number of Si atoms of 100, and that further the film has a peak position of IR absorption band based on the stretching vibration of Si-O-Si that exist between 1055 and 1065 cm−1.
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Citations
14 Claims
- 1. A gas barrier film having a silicon oxide film formed by the plasma CVD method on the one side or both sides of a base material, wherein said silicon oxide film is composed of the rate of components that the number of oxygen atoms is from 170 to 200 and the number of carbon atoms is 30 or less to the number of silicon atoms of 100, and further has a peak position of IR absorption band based on the stretching vibration of Si-O-Si that exist between 1055 and 1065 cm−
- 3. A gas barrier film comprising a base material and a vapor deposition film formed on both sides or one side of the base material, wherein a distance between grains formed on the surface of said vapor deposition film is from 5 to 40 nm.
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5. A gas barrier film comprising a base material and a silicon oxide film formed on both sides or one side of the base material, wherein said silicon oxide film has an E′
- center that is observed by measurement with the electron spin resonance method (ESR method).
- View Dependent Claims (6)
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7. A gas barrier film comprising a base material and a silicon oxide film formed on both sides or one side of the base material, wherein said silicon oxide film has an infrared absorption peak based on the stretching vibration of CO molecules that exists between 2341±
- 4 cm−
1.
- 4 cm−
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10. A production method of a gas barrier film in which at least an organic silicon compound gas and a gas containing oxygen atoms are used as raw material gases and a silicon oxide film is formed on a base material by the plasma CVD method within a reaction chamber, wherein a component in said organic silicon compound gas is a compound that has no carbon-silicon bond in its molecule, the temperature of the base material is within the range of −
- 20°
C. to 100°
C. at the start time of film forming, the silicon oxide film is formed at the flow ratio of said gas containing oxygen atoms to organic silicon compound gas ranging from 3 to 50 when the organic silicon compound gas is 1, and then the film is heat treated within the range of 5°
C. to 200°
C.
- 20°
Specification