Gas barrier film

• US 20010038894A1
• Filed: 03/13/2001
• Published: 11/08/2001
• Est. Priority Date: 03/14/2000
• Status: Abandoned Application

• Current Assignee: Dai Nippon Printing Company Limited
• Original Assignee: Dai Nippon Printing Company Limited
• Inventors: Komada, Minoru
• Application Number:
  US09/804,816
• Publication Number:
  US 20010038894A1
• Time in Patent Office: Days
• US Class Current: 428/34.6
• CPC Class Codes: B32B 15/08 of synthetic resin
• CPC Class Codes: B32B 2307/7242 Non-permeable
• CPC Class Codes: B32B 2439/70 Food packaging
• CPC Class Codes: B32B 2439/80 Medical packaging
• CPC Class Codes: B32B 27/06 as the main or only constituent of a layer, which is next to another layer of the same or of a different material next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08
• CPC Class Codes: B32B 27/08 of synthetic resin
• CPC Class Codes: B32B 7/12 using interposed adhesives or interposed materials with bonding properties
• CPC Class Codes: C08J 7/043 Improving the adhesiveness of the coatings per se, e.g. forming primers adhesives in the form of films or foils characterised by the primer layers between the polymer carriers and the adhesives C09J7/50
• CPC Class Codes: C08J 7/044 Forming conductive coatings; Forming coatings having anti-static properties
• CPC Class Codes: C08J 7/048 Forming gas barrier coatings
• CPC Class Codes: C08J 7/052 Forming heat-sealable coatings
• CPC Class Codes: C08J 7/06 with compositions not containing macromolecular substances
• CPC Class Codes: C08J 7/123 Treatment by wave energy or particle radiation C08J7/18 takes precedence
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: C23C 14/562 for coating elongated substrates
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/545 for coating elongated substrates
• CPC Class Codes: Y10T 428/1317 Multilayer [continuous layer]

Abstract

The purpose of the present invention is to provide a gas barrier film having extremely excellent gas barrier property while retaining the film thickness at a predetermined thickness. A gas barrier film having a silicon oxide film formed by the plasma CVD method on the one side or both sides of a base material is provided, the silicon oxide film is characterized in that the film is comprised of the rate of components that the number of Oxygen atoms is from 170 to 200 and the number of Carbon atoms is 30 or less to the number of Si atoms of 100, and that further the film has a peak position of IR absorption band based on the stretching vibration of Si-O-Si that exist between 1055 and 1065 cm⁻¹.

Claims

1. A gas barrier film having a silicon oxide film formed by the plasma CVD method on the one side or both sides of a base material, wherein said silicon oxide film is composed of the rate of components that the number of oxygen atoms is from 170 to 200 and the number of carbon atoms is 30 or less to the number of silicon atoms of 100, and further has a peak position of IR absorption band based on the stretching vibration of Si-O-Si that exist between 1055 and 1065 cm⁻

1.

2. The gas barrier film according to

claim 1

, wherein said silicon oxide film has a refractive index of 1.45 to 1.48.

8. The gas barrier film according to

claim 1

, wherein oxygen transmission rate is 0.5 cc/m²/day or less and water vapor transmission rate is 0.5 g/m²/day or less.

9. The gas barrier film according to

claim 1

, wherein said silicon oxide film is from 5 to 300 nm in thickness.

11. A laminated material, wherein a heat sealable resin layer is provided on the surface of at least one side of the gas barrier film according to

claim 1

.

12. A packaging container, wherein a laminated material according to

claim 11

is used and said heat sealable resin is heat-sealed to make a bag or case.

13. A laminated material, wherein an electrically conductive layer is formed on the surface of at least one side of the gas barrier film according to

claim 1

.

14. An image display medium, wherein an image display layer is formed on said electrically conductive layer using a laminated material according to

claim 13

as a base material.

3. A gas barrier film comprising a base material and a vapor deposition film formed on both sides or one side of the base material, wherein a distance between grains formed on the surface of said vapor deposition film is from 5 to 40 nm.

4. The gas barrier film according to

claim 3

, wherein said vapor deposition film is a silicon oxide film.

5. A gas barrier film comprising a base material and a silicon oxide film formed on both sides or one side of the base material, wherein said silicon oxide film has an E′

center that is observed by measurement with the electron spin resonance method (ESR method).

6. The gas barrier film according to

claim 5

, wherein the density of said E′

center is 5×

10¹⁵ spins/cm³ or more.

7. A gas barrier film comprising a base material and a silicon oxide film formed on both sides or one side of the base material, wherein said silicon oxide film has an infrared absorption peak based on the stretching vibration of CO molecules that exists between 2341±

4 cm<sup>−

1</sup>.

10. A production method of a gas barrier film in which at least an organic silicon compound gas and a gas containing oxygen atoms are used as raw material gases and a silicon oxide film is formed on a base material by the plasma CVD method within a reaction chamber, wherein a component in said organic silicon compound gas is a compound that has no carbon-silicon bond in its molecule, the temperature of the base material is within the range of −

20°

C. to 100°

C. at the start time of film forming, the silicon oxide film is formed at the flow ratio of said gas containing oxygen atoms to organic silicon compound gas ranging from 3 to 50 when the organic silicon compound gas is 1, and then the film is heat treated within the range of 5°

C. to 200°

C.