Please download the dossier by clicking on the dossier button x
×

Gas barrier film

  • US 20010038894A1
  • Filed: 03/13/2001
  • Published: 11/08/2001
  • Est. Priority Date: 03/14/2000
  • Status: Abandoned Application
First Claim
Patent Images

1. A gas barrier film having a silicon oxide film formed by the plasma CVD method on the one side or both sides of a base material, wherein said silicon oxide film is composed of the rate of components that the number of oxygen atoms is from 170 to 200 and the number of carbon atoms is 30 or less to the number of silicon atoms of 100, and further has a peak position of IR absorption band based on the stretching vibration of Si-O-Si that exist between 1055 and 1065 cm

  • 1.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×