SEMICONDUCTOR DEVICE HAVING LASER-ANNEALED SEMICONDUCTOR DEVICE, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE
First Claim
1. A semiconductor device in which a plurality of semiconductor elements are formed on a substrate, wherein in some or all of said semiconductor elements, a channel width of a channel region formed in a semiconductor layer to which laser annealing is applied is larger than a channel length thereof, and a channel width direction is formed in a direction different from a side direction of said substrate.
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Accused Products
Abstract
In a driver built-in type p-Si TFT LCD, a channel width direction of a sampling TFT (6) constituting a part of a driver and having a large channel width is formed in a direction non-parallel with sides of a substrate or sides of pulse laser beams radiated for poly-crystallization of a-Si. For example, the channel width direction of the sampling TFT (6) is formed to have an angle of 45° relative to the substrate sides. Therefore, even when a dispersion in energy intensity is generated in an irradiated plane of pulse laser beams radiated to a-Si in a poly-crystallization process and a defective crystallized region [R] is formed on a p-Si film (13) in a direction corresponding to the dispersion, the defective crystallized region [R] extends across a part of each TFT (6). Formation of only a specified TFT (6) in the defective crystallized region [R] and occurrence of a difference in characteristics between the specified TFT and another TFT (6) are prevented. Consequently, generation of a low display-quality portion on a specified column on LCD and deterioration of display quality of the entire LCD are prevented.
203 Citations
20 Claims
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1. A semiconductor device in which a plurality of semiconductor elements are formed on a substrate, wherein
in some or all of said semiconductor elements, a channel width of a channel region formed in a semiconductor layer to which laser annealing is applied is larger than a channel length thereof, and a channel width direction is formed in a direction different from a side direction of said substrate.
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3. A semiconductor device in which a plurality of semiconductor elements are formed on a substrate, wherein
in some or all of said semiconductor elements, a channel width of a channel region formed in a semiconductor layer to which laser annealing is applied is larger than a channel length thereof, and a channel width direction is formed in a direction different from a major-axis direction and/or a minor-axis direction of a laser-beam irradiated region at the time of application of said laser annealing.
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5. A display device comprising,
a plurality of pixel electrodes arranged on a substrate; -
a plurality of first thin-film transistors connected to corresponding pixel electrodes among said plurality of pixel electrodes for supplying signals for operating pixels to the connected pixel electrodes; and
a plurality of second thin-film transistors constituting a scanning drive circuit for scanning said plurality of first thin-film transistors and/or a display drive circuit for supplying display signals to said plurality of first thin-film transistors, wherein in some or all of said plurality of second thin-film transistors, a channel width of a channel region formed in a semiconductor film to which laser annealing is applied is larger than a channel length thereof, and a channel width direction is formed in a direction different from a side direction of said substrate. - View Dependent Claims (6, 7, 8, 9)
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10. A display device comprising,
a plurality of pixel electrodes arranged on a substrate; -
a plurality of first thin-film transistors connected to corresponding pixel electrodes among said plurality of pixel electrodes for supplying signals for operating pixels to the connected pixel electrodes; and
a plurality of second thin-film transistors constituting a scanning drive circuit for scanning said plurality of first thin-film transistors and/or a display drive circuit for supplying display signals to said plurality of first thin-film transistors, wherein in some or all of said plurality of second thin-film transistors, a channel width of a channel region formed in a semiconductor film to which laser annealing is applied is larger than a channel length thereof, and a channel width direction is formed in a direction different from a major-axis direction and/or a minor-axis direction of a laser-beam irradiated region at the time of application of said laser annealing. - View Dependent Claims (11, 12, 13, 14)
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15. A liquid crystal display device comprising,
a plurality of pixel electrodes arranged on one of a pair of substrates holding a liquid crystal therebetween; -
a plurality of first thin-film transistors connected to corresponding pixel electrodes among said plurality of pixel electrodes for supplying signals for operating the liquid crystal to the connected pixel electrodes; and
a plurality of second thin-film transistors constituting a scanning drive circuit for scanning said plurality of first thin-film transistors and/or a display drive circuit for supplying display signals to said plurality of first thin-film transistors, channel regions of said plurality of first and second thin-film transistors being formed in a semiconductor film to which laser annealing is applied, and in some or all of said plurality of second thin-film transistors, a channel width being larger than a channel length, and a channel width direction of some or all of second thin-film transistors being formed non-parallel with and non-orthogonal to a channel width direction of said first thin-film transistors. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification