Method for manufacturing digital micro-mirror device (DMD) packages

• US 20010041381A1
• Filed: 05/02/2001
• Published: 11/15/2001
• Est. Priority Date: 05/10/2000
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Jong-Kon
• Granted Patent: US 6,720,206 B2
• Time in Patent Office: Days
• US Class Current: 438/106
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

A method for manufacturing a semiconductor package is disclosed. A wafer including a plurality of semiconductor chips is provided. Each chip has one or more mirrors mounted thereon. Further, a plurality of bond pads formed on a periphery of the chip. Next, a photoresist is formed over the one or more mirrors. Then, the semiconductor chips are singulated from the wafer. One ore more semiconductor chips are mounted on a base substrate. The bond pads of the semiconductor chip are electrically connected with the base substrate. The photoresist is then removed from the semiconductor chips.

Claims

1. A method for manufacturing a semiconductor package, said method comprising:

providing a wafer including one or more semiconductor chips, each chip having one or more mirrors formed thereon, a plurality of bond pads formed on a periphery of the chip;

forming a photoresist over the one or more mirrors;

singulating the one or more semiconductor chips from the wafer;

mounting the one ore more semiconductor chip on a top surface of a base substrate;

electrically interconnecting the bond pads of the semiconductor chip to the base substrate; and

removing the photoresist from the semiconductor chips.

2. The method of

claim 1

, wherein said singulating comprises full-cutting the wafer.

3. The method of

claim 1

, after said forming the photoresist, further comprising:

forming a metallic layer over a back surface of the wafer,

wherein said mounting is performed using a metallic adhesive.

4. The method of

claim 1

, further comprising:

hermetically sealing each attached semiconductor chip on the upper surface of the base substrate.

13. The method of

claim 1

, wherein said hermetically sealing the semiconductor chip and the bonding wires is performed at a predetermined temperature, said predetermined temperature being not higher than the temperature on which said attaching the semiconductor chip to the base substrate is performed.

5. A method for manufacturing digital micro-mirror device (DMD) packages, said method comprising:

providing a wafer including a plurality of DMD semiconductor chips, each chip having one or more mirrors formed on substantially the center of an active surface of the chip, a plurality of electrode pads formed on the periphery of the active surface;

forming a photoresist over the mirrors;

forming a metallic layer on a back surface of the wafer;

separating the wafer into the individual semiconductor chips;

mounting each semiconductor chip on an upper surface of a base substrate;

interconnecting the electrode pads of the semiconductor chip to the base substrate with one or more bonding wires;

removing the photoresist from the semiconductor chips;

forming an anti-sticking film on the active surface of the semiconductor chip for protecting the semiconductor chips from dust and moisture; and

hermetically sealing the semiconductor chip and the bonding wires on the upper surface of the base substrate.

6. The method of

claim 5

, wherein the metallic layer is made of a metal having a low melting point, said metal being selected from the group consisting of Va, Au, Ni, Ag, Cu, Al, Pb, Sn, Sb, Pd and metal-containing compounds thereof.

7. The method of

claim 5

, wherein the base substrate is selected from the group consisting of a ceramic board, a plastic board and a printed circuit board.

8. The method of

claim 5

, wherein said forming a metallic layer comprises lapping the back surface of the wafer and forming the metallic layer made of a metal having a low melting point on the back surface.

9. The method of

claim 5

, wherein said metal adhesive is solder.

10. The method of

claim 5

, wherein said hermetically sealing of the semiconductor chip and the bonding wires comprises providing a metal sealing ring to the base substrate on a periphery of the base substrate and hermetically sealing the semiconductor chip and the bonding wires by attaching a window lid to the upper surface of the metal sealing ring, and wherein a distance between the upper surface of the base substrate and the lower surface of the window lid is greater than the height of the one or more bonding wires.

11. The method of

claim 10

, wherein said window lid comprises a metal lid frame in contact with the metal sealing ring, a window perforating the metal lid frame generally in the center of said window lid, a reflectance coating film formed on the lower surface of the window on a periphery thereof, and a moisture getter attached to lower surface of the metal lid frame.

12. The method of

claim 5

, after said hermetically sealing the semiconductor chip and the one or more bonding wires, which further comprises attaching a heat sink stud to the lower surface of the base substrate.

14. A digital micro-mirror device (DMD) packages, comprising:

a base substrate having a top surface and a bottom surface;

a metallic layer formed on the top surface of the base substrate;

a metallic adhesive formed on the metallic layer;

a semiconductor chip mounted on the metallic adhesive, the base substrate electrically connected with the semiconductor chip;

one or more mirrors mounted on the semiconductor chip;

a hermetic sealing means covering the semiconductor chip including the one more mirrors.

15. The DMD package of

claim 14

, which further comprises a heat sink attached on the bottom surface of the base substrate.