Aligning method, exposure apparatus using this aligning method, and semiconductor device manufacturing method utilizing this exposure apparatus

• US 20010041417A1
• Filed: 03/13/2001
• Published: 11/15/2001
• Est. Priority Date: 03/15/2000
• Status: Active Grant

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Ohsaki, Yoshinori
• Granted Patent: US 6,649,484 B2
• Time in Patent Office: Days
• US Class Current: 438/401
• CPC Class Codes: G03F 9/7046 Strategy, e.g. mark, sensor or wavelength selection
• CPC Class Codes: G03F 9/7049 Technique, e.g. interferometric

Abstract

According to an aligning method, the position of an alignment mark within a plurality of sample shots formed on a substrate is measured with a predetermined measurement condition, and the substrate is positioned on the basis of the position measurement result. This measurement condition is selected on the basis of the change amount of a position measurement value which is obtained from the position measurement result. This position measurement result is obtained by moving the alignment mark in a direction different from the measurement direction and sequentially measuring the position of the alignment mark.

Claims

1. An aligning method of a measuring position of an alignment mark within a plurality of sample shots formed on a substrate with a predetermined measurement condition, and positioning said substrate on the basis of a position measurement result,

wherein said measurement condition is selected on the basis of a change amount of a position measurement value which is obtained from the position measurement result obtained by moving said alignment mark in a non-measurement direction different from a measurement direction and sequentially measuring a position of said alignment mark.

2. The method according to

claim 1

, wherein the measurement condition is selected to decrease the change amount of the position measurement value.

3. The method according to

claim 1

, wherein the measurement condition is altered when the change amount of the position measurement value exceeds a predetermined tolerance.

4. The method according to

claim 1

, wherein said alignment mark is a grating-like mark.

5. The method according to

claim 1

, wherein said alignment mark is moved at the predetermined pitch by an amount larger than a prealignment precision.

6. The method according to

claim 1

, wherein position measurement of said alignment mark is performed using a phase detection method.

7. The method according to

claim 1

, wherein position measurement of said alignment mark is performed using a TTL method.

8. The method according to

claim 7

, wherein an alignment optical system used for position measurement of said alignment mark has aberration correcting means.

9. The method according to

claim 1

, wherein the measurement condition is setting of said sample shots.

10. The method according to

claim 1

, wherein the measurement condition is a length of said alignment mark.

11. The method according to

claim 1

, wherein the measurement condition is a shape of said alignment mark.

12. The method according to

claim 1

, wherein the measurement condition is a wavelength of alignment light.

13. The method according to

claim 1

, wherein the measurement condition is a measurement region of said alignment mark.

14. The method according to

claim 1

, wherein the measurement condition is an adjusting state of said alignment optical system.

15. The method according to

claim 1

, wherein the measurement condition is a layer of said alignment mark to be used.

16. The method according to

claim 1

, wherein the measurement condition is an alignment method.

17. An exposure apparatus for measuring a position of an alignment mark within a plurality of sample shots formed on a substrate with a predetermined measurement condition, positioning said substrate on the basis of a position measurement result, and transferring a predetermined pattern onto said substrate through a projection lens, said exposure apparatus comprising

means for moving said alignment mark in a non-measurement direction different from a measurement direction, sequentially measuring a position of said alignment mark, and obtaining a change amount of a position measurement value from the position measurement result.

18. The apparatus according to

claim 17

, wherein the measurement condition is selected on the basis of the change amount of the position measurement value.

19. A device manufacturing method of manufacturing a semiconductor device, comprising the steps of:

coating a substrate with a resist;

drawing a pattern on said substrate by using an exposure apparatus; and

developing said substrate,

said exposure apparatus serving to measure a position of an alignment mark within a plurality of sample shots formed on said substrate with a predetermined measurement condition, position said substrate on the basis of a position measurement result, and transfer a predetermined pattern onto said substrate through a projection lens, and comprising means for moving said alignment mark in a non-measurement direction different from a measurement direction, sequentially measuring a position of said alignment mark, and obtaining a change amount of a position measurement value from the position measurement result.

20. A device manufacturing method of manufacturing a semiconductor device, comprising the steps of:

coating a substrate with a resist;

drawing a pattern on said substrate by using an exposure apparatus; and

developing said substrate,

said exposure apparatus serving to measure a position of an alignment mark within a plurality of sample shots formed on said substrate with a predetermined measurement condition, position said substrate on the basis of a position measurement result, and transfer a predetermined pattern onto said substrate through a projection lens, and comprising means for moving said alignment mark in a non-measurement direction different from a measurement direction, sequentially measuring a position of said alignment mark, and obtaining a change amount of a position measurement value from the position measurement result, the measurement condition being selected on the basis of the change amount of the position measurement value.