Method of depositing dielectric

• US 20010041460A1
• Filed: 04/12/2001
• Published: 11/15/2001
• Est. Priority Date: 04/14/2000
• Status: Abandoned Application

• Current Assignee: Aviza Europe Limited
• Original Assignee: Aviza Europe Limited
• Inventors: Wiggins, Claire Louise
• Application Number:
  US09/832,942
• Publication Number:
  US 20010041460A1
• Time in Patent Office: Days
• US Class Current: 438/785
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/5826 Treatment with charged particles C23C14/582 takes precedence
• CPC Class Codes: C23C 14/5853 Oxidation
• CPC Class Codes: H01G 4/1254 based on niobium or tungsteen, tantalum oxides or niobates, tantalates
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02323 introduction of oxygen
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence

Abstract

This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.

Claims

1. A method of depositing dielectric on a semiconductor substrate on a support to form part of a capacitor including reactive sputtering a metal oxide layer from a target of the metal onto the substrate characterised in that the support is biased to induce a DC voltage across the depositing dielectric as it forms.

2. A method as claimed in

claim 1

wherein the induced voltage is in the range 200 to 300 volts.

3. A method as claimed in

claim 1

or

claim 2

wherein the support is biased by means of an RF or pulsed DC power supply.

4. A method as claimed in

claim 1

wherein the target is biased by an RF or pulsed DC power supply.

5. A method as claimed in any one of the preceding claims further including plasma oxidation of the oxide after or during deposition.

6. A method as claimed in any one of the preceding claims wherein the dielectric is deposited on a first electrode and discrete second electrodes are deposited on the upper surface to define a plurality of capacitors.

7. A method as claimed in

claim 6

wherein the area of each second electrode is less than 0.01 cm².

8. A method as claimed in any one of the preceding claims wherein the metal oxide is Tantalum Pentoxide.