FIELD SEQUENTIAL GRAY IN ACTIVE MATRIX LED DISPLAY USING COMPLEMENTARY TRANSISTOR PIXEL CIRCUITS

• US 20010043173A1
• Filed: 09/04/1997
• Published: 11/22/2001
• Est. Priority Date: 09/04/1997
• Status: Abandoned Application

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: TROUTMAN, RONALD ROY
• Application Number:
  US08/923,795
• Publication Number:
  US 20010043173A1
• Time in Patent Office: Days
• US Class Current: 345/82
• CPC Class Codes: G09G 2300/0842 forming a memory circuit, e.g. a dynamic memory with one capacitor
• CPC Class Codes: G09G 2310/0251 Precharge or discharge of pixel before applying new pixel voltage
• CPC Class Codes: G09G 3/2022 using sub-frames
• CPC Class Codes: G09G 3/3258 with pixel circuitry controlling the voltage across the light-emitting element

Abstract

Disclosed is a pixel circuit consisting of complementary N- and P-channel MOS field-effect transistors (or of thin-film transistors), a capacitor, and an organic light-emitting diode. This circuit stores a voltage signal that is used to control the amount of light emitted from the pixel by means of a CMOS inverter. This pixel circuit is used in a two-dimensional array to form an active-matrix OLED display. The amount of light emitted at each pixel during a frame time is controlled by dividing the frame time into many sub-frames (or fields) and changing the stored voltage at the beginning of each sub-frame in such a way that the integrated time a voltage is stored during a frame time determines the total amount of light emitted.

Claims

1. An active matrix light-emitting diode (LED) display comprising:

a pixel circuit that stores a signal voltage by selectively addressing a row and a column line in the display and means for transferring the signal voltage from the column line to a capacitance by means of a transfer device, thereby regulating current through a CMOS inverter and a LED, to control the amount of light emitted from the LED.

2. An active matrix light-emitting diode display according to

claim 1

in which the transfer device and CMOS inverter are MOSFETs fabricated in a silicon substrate;

3. An active matrix light-emitting diode display according to

claim 1

in which the transfer device and CMOS inverter are polycrystalline silicon TFTs fabricated on a glass substrate;

5. An active matrix light-emitting diode display according to

claim 1

in which the access device is an N-channel MOSFET, a CMOS inverter consisting of an N-channel MOSFET and a P-channel MOSFET controls the LED current, and the LED is in the common cathode configuration;

6. An active matrix light-emitting diode display according to

claim 1

in which the access device is a P-channel MOSFET, a CMOS inverter consisting of an N-channel MOSFET and a P-channel MOSFET controls the LED current, and the LED is in the common cathode configuration;

7. An active matrix light-emitting diode display according to

claim 1

in which the access device is an N-channel MOSFET, a CMOS inverter consisting of an N-channel MOSFET and a P-channel MOSFET controls the LED current, and the LED is in the common anode configuration;

8. An active matrix light-emitting diode display according to

claim 1

in which the access device is a P-channel MOSFET, a CMOS inverter consisting of an N-channel MOSFET and a P-channel MOSFET controls the LED current, and the LED is in the common anode configuration;

9. An active matrix light-emitting diode display according to

claim 5

or

6

in which the N-channel and P-channel MOSFETs are fabricated in single crystal silicon, and the LED is fabricated on top of the pixel circuit with its anode electrically connected to the output node of the CMOS inverter;

10. An active matrix light-emitting diode display according to

claim 7

or

8

in which the N-channel and P-channel MOSFETs are fabricated in single crystal silicon, and the LED is fabricated on top of the pixel circuit with its cathode electrically connected to the output node of the CMOS inverter;

11. An active matrix light-emitting diode display according to

claim 1

in which the access device is an N-channel TFT, a CMOS inverter comprising an N-channel and a P-channel TFT controls the LED current, and the LED is in the common cathode configuration;

12. An active matrix light-emitting diode display according to

claim 1

in which the access device is a P-channel TFT, a CMOS inverter comprising an N-channel and a P-channel TFT controls the LED current, and the LED is in the common cathode configuration;

13. An active matrix light-emitting diode display according to

claim 1

in which the access device is an N-channel TFT, a CMOS inverter comprising an N-channel and a P-channel TFT controls the LED current, and the LED is in the common anode configuration;

14. An active matrix light-emitting diode display according to

claim 1

in which the access device is a P-channel TFT, a CMOS inverter comprising an N-channel and a P-channel TFT controls the LED current, and the LED is in the common anode configuration;

15. An active matrix light-emitting diode display according to

claim 11

or

12

in which the N-channel and P-channel TFTs are fabricated using amorphous or polycrystalline silicon deposited on a glass substrate, and the LED is fabricated on top of the pixel circuit with its anode electrically connected to the output node of the CMOS inverter;

16. An active matrix light-emitting diode display according to

claim 13

or

14

in which the N-channel and P-channel TFTs are fabricated using amorphous or polycrystalline silicon deposited on a glass substrate, and the LED is fabricated on top of the pixel circuit with its cathode electrically connected to the output node of the CMOS inverter;

17. An active matrix light-emitting diode display according to

claim 1

in which the LED is turned on for only a portion of the frame time, this portion being adjusted to provide a desired gray level.

18. An active matrix light-emitting diode display according to

claim 17

whereby the frame time is divided into sub-frames and each LED is turned on during some sub-frames and not others in such a way to achieve gray scale operation;

19. An active matrix light-emitting diode display according to

claim 18

in which the duration of the sub-frames are chosen according to a binary weighting.

20. An active matrix light-emitting diode display according to

claim 19

in which the binary weighting is done according to the formula T_sfk/T_f=2^k−

1/(2ⁿ−

1), where T_sfk is the time duration of sub-frame k, T_f is the frame time of the display, and n is the number of gray scale bits.

21. An active matrix light-emitting diode display according to

claim 1

or

22

wherein said LED is an organic light-emitting diode.

4. An active matrix light-emitting diode display according to claim I in which the transfer device and CMOS inverter are amorphous silicon TFTs fabricated on a glass substrate;

22. A structure comprising a circuit comprising a light emitting diode having a first terminal and a second terminal an access transistor having a first terminal, a second terminal and a gate electrode;

an inverter comprising a first inverter transistor and a second inverter transistor each of which has a first terminal, a second terminal and a gate electrode;

said first and second inverter transistors being of opposite conductivity types;

a capacitor having a first terminal and a second terminal;

said gate electrode of said first inverter transistor being electrically connected to said gate electrode of said second inverter transistor, to said first terminal of said access transistor and to said first terminal of said capacitor;

said first terminal of said light-emitting diode being electrically connected to said first terminal of said first inverter transistor and to said second terminal of said second inverter transistor.

23. A structure according to

claim 22

wherein said light-emitting diode is an organic light-emitting diode.