Optical test structure for measuring charge-transfer efficiency

• US 20010043274A1
• Filed: 12/14/2000
• Published: 11/22/2001
• Est. Priority Date: 12/22/1999
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Eastman Kodak Company
• Inventors: Stevens, Eric G., Shepherd, John P.
• Granted Patent: US 6,803,960 B2
• Time in Patent Office: Days
• US Class Current: 348/241
• CPC Class Codes: H01L 27/14818 Optical shielding
• CPC Class Codes: H01L 27/1485 Frame transfer

Abstract

An optically operated test structure for testing the charge transfer efficiency (CTE) of a charge coupled device (CCD) solid-state image sensor. A solid-state image sensor includes a substrate of a semiconductor material of one conductivity type having a surface. A plurality of spaced, parallel CCDs are in the substrate at the surface. Each CCD includes a channel region and a plurality of conductive gates extending across and insulated from the channel region. The conductive gates extend laterally across the channel regions of all of the CCDs and divide the channel regions into a plurality of phases and pixels. A drain region of the opposite conductivity type is in the substrate at the surface and extends along the channel region of at least one of the CCDs.

A simply connected (rectangular) region of the plurality of spaced, parallel CCDs is photoactive. The CCDs outside this photoactive region are typically covered with metal or some other optically opaque material. One or more of the parallel CCD columns comprise optical test structures at the start and end of the CCD array and are photoactive. One or more parallel regions are adjacent and abutting on either side of the test structures; these may or may not be photoactive. These surrounding, adjacent regions are connected to a drain on the imager; the drain collects any charge captured in these adjacent regions.

Each of the plurality of spaced, parallel, vertical CCDs is connected to one or more horizontal CCDs oriented in a direction perpendicular to the vertical CCDs.

Claims

1. An image sensor comprising:

a photoactive area including rows and columns of pixels;

a light shield surrounding said photoactive area;

at least one photoactive test column adjacent said light shield;

at least one inactive column positioned adjacent said photoactive test column, wherein said photoactive test column is positioned between said light shield and said inactive column.

2. The image sensor in

claim 1

, further comprising a horizontal shift register connected to said photoactive area and said photoactive test column.

3. The image sensor in

claim 2

, wherein said inactive column is disconnected from said horizontal shift register.

4. The image sensor in

claim 2

, wherein a trailing signal following a signal from said photoactive test column represents a relative inefficiency of said horizontal shift register.

5. The image sensor in

claim 1

, further comprising a guard ring connected to said inactive column.

7. The image sensor in

claim 1

, wherein said at least one inactive column comprises at least two inactive columns positioned on opposite sides of said photoactive test column.

6. The image sensor in

claim 6

, wherein said guard ring is electrically isolated from said horizontal shift register.

8. An image sensor area array comprising:

an array of pixels arranged in a series of rows and columns;

a plurality of vertical shift registers operatively coupled to said columns;

at least one horizontal shift register coupled to said vertical shift registers, said horizontal shift register having a front end and a back end;

an output structure electrically connected to said horizontal shift register at said front end;

at least one photoactive test column of pixels that transfers charge to said horizontal shift register; and

at least one inactive column of pixels adjacent said photoactive test column and being farther from said front end than said photoactive column is from said front end, said inactive column being disconnected from to transfer charge into said horizontal shift register.

9. The image sensor array in

claim 8

, further comprising at least one shielded column for providing a dark reference level, said shielded column being electrically connected to said horizontal shift register.

10. The image sensor array in

claim 8

, wherein a trailing signal following a signal from said photoactive test column represents a relative inefficiency of said horizontal shift register.

11. The image sensor array in

claim 8

, further comprising a guard ring connected to said inactive column.

12. The image sensor array in

claim 8

, wherein said guard ring is electrically isolated from said horizontal shift register.

13. The image sensor array in

claim 8

, wherein said at least one inactive column comprises at least two inactive columns positioned on opposite sides of said photoactive test column.

14. An image sensor area array comprising:

an array of pixels arranged in a series of rows and columns;

a plurality of vertical shift registers operatively coupled to said columns;

at least one horizontal shift register coupled to said vertical shift registers, said horizontal shift register having a front end and a back end;

an output structure electrically connected to said horizontal shift register at said front end; and

at least one photoactive test column of pixels connected to transfer charge into said front end of said horizontal shift register.

15. The image sensor array in

claim 14

, further comprising at least one inactive column of pixels adjacent said photoactive test column and being farther from said front end than said photoactive column is from said front end, said inactive column being configured not to transfer charge into said horizontal shift register.

16. The image sensor array in

claim 14

, further comprising at least one shielded column for providing a dark reference level, said shielded column being electrically connected to said horizontal shift register.

17. The image sensor array in

claim 14

, wherein a trailing signal following a signal from said photoactive test column represents a relative inefficiency of said horizontal shift register.

18. The image sensor array in

claim 15

, further comprising a guard ring connected to said inactive column.

19. The image sensor array in

claim 18

, wherein said guard ring is electrically isolated from said horizontal shift register.

20. The image sensor array in

claim 15

, wherein said at least one inactive column comprises at least two inactive columns positioned on opposite sides of said photoactive test column.