Method for producing a barrier layer in an electronic component and method for producing an electronic component with a barrier layer

• US 20010046765A1
• Filed: 05/07/2001
• Published: 11/29/2001
• Est. Priority Date: 05/05/2000
• Status: Abandoned Application

• Current Assignee: Annalisa Cappellani, Dirk Schumann, Josef Willer
• Original Assignee: Annalisa Cappellani, Dirk Schumann, Josef Willer
• Inventors: Cappellani, Annalisa, Schumann, Dirk, Willer, Josef
• Application Number:
  US09/850,584
• Publication Number:
  US 20010046765A1
• Time in Patent Office: Days
• US Class Current: 438/627
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/26546 of electrically active species
• CPC Class Codes: H01L 21/28044 the conductor comprising at least another non-silicon conductive layer
• CPC Class Codes: H01L 29/4941 with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon

Abstract

A barrier layer is formed on a substrate layer by implanting implantation atoms into the substrate material of the substrate layer. A metal layer is applied onto the substrate material and the substrate material, the implantation atoms and the metal layer are at least partially brought into reaction with one another in such a way that the barrier layer is formed.

Claims

1. A method for producing a barrier layer in an electronic component, which comprises the steps of:

implanting implantation atoms into a substrate material of the electronic component for forming the barrier layer;

applying a metal layer to the substrate material; and

bringing the substrate material, the implantation atoms, and the metal layer at least partially into reaction with one another such that the barrier layer is formed, and a silicidization of the metal layer through the barrier layer is prevented by the barrier layer.

2. The method according to

claim 1

, which comprises using atoms selected from the group consisting of nitrogen atoms and boron atoms as the implantation atoms.

3. The method according to

claim 1

, which comprises forming the substrate material from a material selected from the group consisting of silicon, gallium arsenide, and germanium.

4. The method according to

claim 1

, which comprises performing an annealing of the substrate material, the implantation atoms and the metal layer for bring the substrate material, the implantation atoms and the metal layer at least partially into reaction with one another.

5. The method according to

claim 1

, which comprises performing the implanting of the implantation atoms after the metal layer has been applied onto the substrate material.

6. The method according to

claim 1

, which comprises applying a scatter oxide layer onto one of the substrate material and the metal layer, and the implanting of the implantation atoms takes place through the scatter oxide layer.

7. The method according to

claim 6

, which comprises forming the scatter oxide layer from silicon oxide.

8. The method according to

claim 1

, which comprises forming the metal layer from at least one material selected from the group consisting of tungsten, molybdenum, tantalum, rhenium, titanium, zirconium, hafnium, niobium, and ruthenium.

9. A production method, which comprises the steps of:

producing an electronic component having a barrier layer by the steps of;

providing a substrate material;

implanting implantation atoms into the substrate material for forming the barrier layer;

applying a metal layer to the substrate material; and

bringing the substrate material, the implantation atoms, and the metal layer at least partially into reaction with one another such that the barrier layer is formed, and a silicidization of the metal layer through the barrier layer is prevented by the barrier layer.

10. The method according to

claim 9

, which comprises:

forming the electronic component as a transistor; and

forming a gate of the transistor from the metal layer.

11. The method according to

claim 9

, which comprises forming an electrical contact in the electronic component from the metal layer.