High-frequency signal amplification device and method for manufacturing the same

• US 20010048164A1
• Filed: 05/23/2001
• Published: 12/06/2001
• Est. Priority Date: 05/24/2000
• Status: Active Grant

• Current Assignee: Collabo Innovations, Inc. (Wi-LAN Inc.)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Yoshikawa, Noriyuki, Tateoka, Kazuki, Kanazawa, Kunihiko
• Granted Patent: US 6,509,641 B2
• Time in Patent Office: Days
• US Class Current: 257/758
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 Multilayer substrate
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.

Claims

1. A high-frequency signal amplification device, comprising:

a dielectric multilayer substrate including a plurality of dielectric layers;

a semiconductor element with high-frequency signal amplification function mounted on the dielectric multilayer substrate;

a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate; and

a metal surface that is arranged at a position lower than the plurality of metal conductors;

wherein the metal conductors are exposed at a portion of a first region of the surface of the dielectric multilayer substrate, and the metal surface is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged;

wherein the semiconductor element is mounted on the first region; and

wherein a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.

2. The high-frequency signal amplification device according to

claim 1

, wherein a spacing between the metal conductors into which the high-frequency signal is input or output is at least 10 μ

m and at most 300 μ

m.

3. The high-frequency signal amplification device according to

claim 1

, wherein the semiconductor element is bonded to the metal surface that is arranged at a position lower than the plurality of metal conductors, and the semiconductor element is connected electrically to the metal conductors by metal wires.

4. The high-frequency signal amplification device according to

claim 1

, wherein the semiconductor element is bonded face-down to the plurality of metal conductors.

5. The high-frequency signal amplification device according to

claim 1

, wherein the semiconductor element is mounted such that it does not protrude upward beyond the surface of the dielectric multilayer substrate.

6. The high-frequency signal amplification device according to

claim 1

, wherein the metal surface that is arranged at a position lower than the plurality of metal conductors is a surface of a metal conductor that is disposed on a surface of one of the plurality of dielectric layers, and this metal conductor is disposed over a region that extends at least 50 μ

m beyond an edge of the first region.

7. The high-frequency signal amplification device according to

claim 1

, wherein the semiconductor element is sealed by a resin.

8. A method for manufacturing a high-frequency signal amplification device comprising a dielectric multilayer substrate including a plurality of dielectric layers, and a semiconductor element with high-frequency signal amplification function mounted on the dielectric multilayer substrate;

the method comprising steps of;

preparing a dielectric multilayer substrate in which a plurality of metal conductors are formed on a surface of at least one of the plurality of dielectric layers, such that, in any range within a first region of a first surface of the dielectric multilayer substrate, proceeding from the surface of the dielectric multilayer substrate in a depth direction of the dielectric multilayer substrate, the plurality of metal conductors or a metal surface that is arranged at a position lower than the plurality of metal conductors is reached before reaching a second surface of the dielectric multilayer substrate;

removing, with an agent capable of acting in a substantially vertical direction and removing dielectric materials more readily than metals, in the first region of the dielectric multilayer substrate, a dielectric layer in a depth direction from the first surface of the dielectric multilayer substrate until reaching the metal conductors or the metal surface, and exposing the metal conductors and the metal surface in the first region; and

mounting the semiconductor element in the first region, such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.

9. The method according to

claim 8

, wherein the agent is laser light.