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Method of fabricating a light emitting device

  • US 20010049197A1
  • Filed: 06/04/2001
  • Published: 12/06/2001
  • Est. Priority Date: 06/05/2000
  • Status: Active Grant
First Claim
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1. A method of fabricating a light emitting device, comprising the steps of:

  • forming a semiconductor film on an insulator;

    forming a gate insulating film covering the semiconductor film;

    forming a first conductive film and a second conductive film on the gate insulating film;

    forming an electrode made of the second conductive film by etching the second conductive film;

    adding an n-type impurity element to the semiconductor film by self-alignment using the electrode made of the second conductive film;

    forming an electrode made of the first conductive film by etching the first conductive film by self-alignment using the electrode made of the second conductive film;

    forming a second gate electrode by narrowing a line width of the electrode made of the second conductive film by etching;

    adding an n-type impurity element to the semiconductor film by self-alignment using the second gate electrode; and

    forming a first gate electrode by narrowing a line width of the electrode made of the first conductive film by etching.

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