METHOD OF FILM FORMATION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20010049202A1
• Filed: 09/22/1998
• Published: 12/06/2001
• Est. Priority Date: 05/20/1998
• Status: Active Grant

• Current Assignee: Semiconductor Process Laboratory Co., Ltd.
• Original Assignee: Semiconductor Process Laboratory Co., Ltd.
• Inventors: MAEDA, KAZUO, NISHIMOTO, YUHKO
• Granted Patent: US 6,352,943 B2
• Time in Patent Office: Days
• US Class Current: 438/778
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31625 Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Abstract

This invention relates to a method of film formation in which, when a silicon oxide film (a NSG film: a Non-doped Silicate Glass) is formed on a substrate having a recess by a CVD method using a mixed gas containing a TEOS and ozone, a surface dependency of the substrate is deleted to embed a silicon oxide film into the recess of the surface thereof. The invention comprises a process forming a phosphorus containing insulating film 14 as a base layer on the surface of a substrate 11 and a process forming a silicon-containing insulating film 15 on the phosphosilicate glass film 14 by the chemical vapor deposition method used a mixed gas containing a ozone-containing gas and a silicon-containing gas.

Claims

1. A method of film formation comprising the steps of:

forming a phosphorus-containing insulating film on a surface of a substrate as a base layer; and

forming a silicon-containing insulating film on said phosphorus-containing insulating film by a chemical vapor deposition using a mixed gas containing a ozone-containing gas and a silicon-containing gas.

2. The method of film formation according to

claim 1

, wherein after a step of forming said phosphorus-containing insulating film and before a step of forming the silicon-containing insulating film on said phosphorus-containing insulating film, a surface of said phosphorus-containing insulating film is exposed to the atmosphere, or the surface of said phosphorus-containing insulating film is exposed to water vapor while heating the surface of said phosphorus-containing insulating film.

3. The method of film formation according to

claim 1

, wherein a film thickness of said phosphorus-containing insulating film deposited is within the range of 10 nm to 100 nm.

4. The method of film formation according to

claim 1

, wherein said ozone-containing gas is a gas containing ozone of a concentration of not more than 10% in oxygen.

5. The method of film formation according to

claim 1

, wherein said silicon-containing gas is a gas containing tetraethylorthosilicate (TEOS).

6. The method of film formation according to

claim 1

, wherein a deposition temperature during forming said silicon-containing insulating film is within the range of 350°

C. to 550°

C.

7. The method of film formation according to

claim 6

, wherein the deposition temperature during forming said silicon-containing insulating film is within the range of 375°

C. to 425°

C.

8. The method of film formation according to

claim 1

, wherein said phosphorus-containing insulating film is any one of a phosphosilicate glass film (a PSG film) and a borophosphosilicate glass film.

9. The method of film formation according to

claim 8

, wherein a phosphorus concentration in said phosphosilicate glass film is not more than 10 mol %.

10. A method of film formation comprising the steps of:

discharging a ozone-containing gas, a silicon-containing gas and a phosphorus-containing gas by a first gas discharge means to form a phosphorus-containing insulating film on a surface of a substrate as a base layer by a chemical vapor deposition; and

discharging the ozone-containing gas and the silicon-containing gas by a second gas discharge means which differs from said first gas discharge means continuously after ceasing the discharge by the first gas discharge means to form a silicon-containing insulating film on said phosphorous-containing insulating film by the chemical vapor deposition.

11. The method of film formation according to

claim 10

, wherein after a step of forming said phosphorus-containing insulating film and before a step of forming the silicon-containing insulating film on said phosphorus-containing insulating film, a surface of said phosphorus-containing insulating film is exposed to the atmosphere, or the surface of said phosphorus-containing insulating film is exposed to water vapor while heating the surface of said phosphorus-containing insulating film.

12. The method of film formation according to

claim 10

, wherein a film thickness of said phosphorus-containing insulating film deposited is within the range of 10 nm to 100 nm.

13. The method of film formation according to

claim 10

, wherein said ozone-containing gas is a gas containing ozone of a concentration of not more than 10% in oxygen.

14. The method of film formation according to

claim 10

, wherein said silicon-containing gas is a gas containing tetraethylorthosilicate (TEOS).

15. The method of film formation according to

claim 10

, wherein a deposition temperature during forming said silicon-containing insulating film is within the range of 350°

C. to 550°

C.

16. The method of film formation according to

claim 15

, wherein the deposition temperature during forming said silicon-containing insulating film is within the range of 375°

C. to 425°

C.

17. The method of film formation according to

claim 10

, wherein said phosphorus-containing insulating film is any one of a phosphosilicate glass film (a PSG film) and a borophosphosilicate glass film.

18. The method of film formation according to

claim 17

, wherein a phosphorus concentration in said phosphosilicate glass film is not more than 10 mol %.

19. A method for manufacturing a semiconductor device comprising the steps of:

forming the phosphorus-containing insulating film for sheathing a recess as the base layer on the surface of the substrate having said recess; and

subsequently forming a silicon-containing insulating film on said phosphorus-containing insulating film by a chemical vapor deposition using a mixed gas containing a ozone-containing gas and a silicon-containing gas, so that said recess is embedded with the silicon oxide film.

20. A method of film formation comprising the steps of:

discharging a ozone-containing gas, a silicon-containing gas and a phosphorus-containing gas by a first gas discharge means to form a phosphorus-containing insulating film for sheathing a recess on a surface of a substrate having said recess as a base layer by a chemical vapor deposition; and

discharging the ozone-containing gas and the silicon-containing gas by a second gas discharge means which differs from said first gas discharge means continuously after ceasing the discharge by the first gas discharge means to form a silicon-containing insulating film on said phosphorous-containing insulating film by the chemical vapor deposition, so that said recess is embedded with the silicon oxide film.