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METHOD OF FILM FORMATION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20010049202A1
  • Filed: 09/22/1998
  • Published: 12/06/2001
  • Est. Priority Date: 05/20/1998
  • Status: Active Grant
First Claim
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1. A method of film formation comprising the steps of:

  • forming a phosphorus-containing insulating film on a surface of a substrate as a base layer; and

    forming a silicon-containing insulating film on said phosphorus-containing insulating film by a chemical vapor deposition using a mixed gas containing a ozone-containing gas and a silicon-containing gas.

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