Plasma processing apparatus

• US 20010050144A1
• Filed: 02/02/2000
• Published: 12/13/2001
• Est. Priority Date: 07/05/1999
• Status: Active Grant

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Nishikawa, Kazuyasu, Oomori, Tatsuo, Ootera, Hiroki
• Granted Patent: US 6,417,111 B2
• Time in Patent Office: Days
• US Class Current: 156/345.33
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32458 Vessel

Abstract

A plasma processing apparatus includes a processing chamber, processing gas supply means for supplying one or more processing gases into the processing chamber, plasma generating means for generating a plasma, a mounting stage for mounting an object to be processed, bias applying means for applying an electrical bias voltage to the mounting stage, a gas storage chamber being disposed in a position opposite to a face of the mounting stage and being provided with a supply system for supplying neutral particles or gases to generate the neutral particles, a partition plate for separating the gas storage chamber from the processing chamber and having jet holes for jetting the neutral particles into the processing chamber, and an exhaust system.

Claims

1. A plasma processing apparatus comprising

a processing chamber,

processing gas supply means for supplying one or more processing gases into the processing chamber,

plasma generating means for changing the processing gases supplied into the processing chamber to a plasma,

a mounting stage for mounting an object to be processed which is provided in the processing chamber,

bias applying means for applying an electrical bias voltage to the mounting stage,

a gas storage chamber which is placed at a position opposite to a face of the mounting stage on which the object being processed is mounted and which is provided with a supply system for supplying neutral particles or gases to generate the neutral particles,

a partition plate which separates the gas storage chamber from the processing chamber and having jet holes for jetting the neutral particles into the processing chamber, and

an exhaust system.

2. The plasma processing apparatus according to

claim 1

, wherein the partition plate is a counter electrode to the mounting stage.

3. The plasma processing apparatus according to

claim 2

, wherein the partition plate comprises a dielectric film formed on an electric conductor.

4. The plasma processing apparatus according to

claim 2

, wherein the partition plate is grounded.

5. The plasma processing apparatus according to

claim 2

, wherein the partition plate is provided with a power supply for applying a radio frequency or a DC bias voltage.

6. The plasma processing apparatus according to

claim 1

, wherein each jet hole is in a shape of a nozzle having an enlarged size toward the side of the processing chamber.

7. The plasma processing apparatus according to

claim 1

, wherein the gas storage chamber is composed of a plurality of discrete gas storage chambers and a plurality of partition plates.

8. The plasma processing apparatus according to

claim 1

, wherein the gas storage chamber is provided with plasma generating means.

9. The plasma processing apparatus according to

claim 1

, wherein the gas storage chamber is provided with a radical source.

10. The plasma processing apparatus according to

claim 1

, wherein the gas storage chamber is provided with an ion source.

11. The plasma processing apparatus according to

claim 10

, wherein the ion source is provided with ion accelerating means.

12. The plasma processing apparatus according to

claim 1

, wherein the diameter of the jet hole is smaller than the mean free path of neutral particles in the gas storage chamber.

13. The plasma processing apparatus according to

claim 1

, wherein a longitudinal length of the jet hole is longer than a mean free path of the neutral particles in the gas storage chamber.

14. The plasma processing apparatus according to

claim 1

, wherein a pressure within the processing chamber is lower than that of the gas storage chamber.

15. The plasma processing apparatus according to

claim 1

, wherein a distance between the mounting stage and the partition plate is not longer than a mean free path of the neutral particles in the processing chamber.

16. The plasma processing apparatus according to

claim 1

, wherein the supply system is provided with pulse valve supply means.