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Lateral super-junction semiconductor device

  • US 20010050394A1
  • Filed: 04/27/2001
  • Published: 12/13/2001
  • Est. Priority Date: 04/27/2000
  • Status: Active Grant
First Claim
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1. A lateral semiconductor device comprising:

  • a semiconductor chip;

    two main electrodes on one major surface of the semiconductor chip; and

    an alternating conductivity type layer between the main electrodes;

    wherein the alternating conductivity type layer comprises first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type;

    wherein the first semiconductor regions and the second semiconductor regions are alternately arranged; and

    wherein the alternating conductivity type layer comprises a closed loop surrounding one of the main electrodes.

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