Thin film encapsulation of organic light emitting diode devices

• US 20010052752A1
• Filed: 02/15/2001
• Published: 12/20/2001
• Est. Priority Date: 04/25/2000
• Status: Abandoned Application

• Current Assignee: eMagin Corporation (Samsung Electronics Co. Ltd.)
• Original Assignee: eMagin Corporation (Samsung Electronics Co. Ltd.)
• Inventors: Ghosh, Amalkumar P., Howard, Webster E., Jones, Gary W.
• Application Number:
  US09/784,378
• Publication Number:
  US 20010052752A1
• Time in Patent Office: Days
• US Class Current: 313/512
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 71/851 Division of substrate
• CPC Class Codes: Y10T 428/31692 Next to addition polymer from unsaturated monomers

Abstract

The present invention is directed to an OLED display device including an encapsulation assembly and methods for making such devices. The encapsulation assembly includes at least two layers, one of which is a dielectric oxide layer directly in contact with at least part of a substrate, and the other of which is preferably a polymer layer.

Claims

1. An organic light emitting diode display device comprising a substrate, at least one organic light emitting diode device formed thereon, and an encapsulation assembly formed over the substrate and the at least one organic light emitting diode device, the encapsulation assembly comprising:

a first encapsulation oxide layer comprising a dielectric oxide, wherein the dielectric oxide of the encapsulation oxide layer lies over and in direct contact with both the substrate and the at least one organic light emitting diode device; and

a second encapsulation layer, wherein the second encapsulation layer covers the first encapsulation layer.

2. An organic light emitting diode display device comprising a substrate, at least one organic light emitting diode device formed thereon, and an encapsulation assembly formed over the substrate and the at least one organic light emitting diode device, the encapsulation assembly comprising:

a first encapsulation oxide layer comprising a dielectric oxide deposited using a process selected from the group consisting of ALE and ALD, wherein the dielectric oxide of the first encapsulation oxide layer lies over and is in direct contact with both the substrate and the at least one organic light emitting diode device; and

a second encapsulation layer comprising a polymer, wherein the second encapsulation layer covers the first encapsulation layer.

3. The organic light emitting diode display device according to

claim 2

, wherein the polymer of the second encapsulation layer comprises a parylene.

4. The organic light emitting diode display device according to

claim 3

, wherein the parylene is selected from the group consisting of parylene N, parylene C, and parylene D.

5. The organic light emitting diode display device according to

claim 2

, wherein the second encapsulation polymer layer comprises parylene C.

6. The organic light emitting diode display device according to

claim 2

, wherein the first encapsulation oxide layer comprises a dielectric oxide selected from the group consisting of Al₂O₃, SiO₂, TiO₂, ZrO₂, MgO, HfO₂, Ta₂O₅, aluminum titanium oxide, and tantalum hafnium oxide.

7. The organic light emitting diode display device according to

claim 3

, wherein the first encapsulation oxide layer comprises a dielectric oxide selected from the group consisting of Al₂O₃, SiO₂, TiO₂, ZrO₂, MgO, HfO₂, Ta₂O₅, aluminum titanium oxide, and tantalum hafnium oxide.

8. The organic light emitting diode display device according to

claim 4

, wherein the first encapsulation oxide layer comprises a dielectric oxide selected from the group consisting of Al₂O₃, SiO₂, TiO₂, ZrO₂, MgO, HfO₂, Ta₂O₅, aluminum titanium oxide, and tantalum hafnium oxide.

9. The organic light emitting diode display device according to

claim 2

, wherein the first encapsulation oxide layer comprises a dielectric oxide selected from the group consisting of Al₂O₃ and SiO₂.

10. The organic light emitting diode display device according to

claim 3

, wherein the first encapsulation oxide layer comprises a dielectric oxide selected from the group consisting of Al₂O₃ and SiO₂.

11. The organic light emitting diode display device according to

claim 4

, wherein the first encapsulation oxide layer comprises a dielectric oxide selected from the group consisting of Al₂O₃ and SiO₂.

12. The organic light emitting diode display device according to

claim 2

, wherein the dielectric oxide of the first encapsulation oxide layer comprises Al₂O₃.

13. The organic light emitting diode display device according to

claim 3

, wherein the dielectric oxide of the first encapsulation oxide layer comprises Al₂O₃.

14. The organic light emitting diode display device according to

claim 4

, wherein the dielectric oxide of the first encapsulation oxide layer comprises Al₂O₃.

27. The method according to

claim 2

, wherein the step of depositing the oxide layer uses ALD.

15. An organic light emitting diode display device comprising a substrate, at least one organic light emitting diode device formed thereon, and an encapsulation assembly formed over the substrate and the at least one organic light emitting diode device, the encapsulation assembly comprising:

a patterned first encapsulation layer wherein the pattern of the first encapsulation layer leaves a perimeter of the substrate exposed around the at least one organic light emitting diode device;

a second encapsulation layer comprising an oxide selected from the group consisting of an ALE dielectric oxide and an ALD dielectric oxide, wherein the second encapsulation layer covers both the exposed perimeter of the substrate and the first encapsulation layer.

16. The organic light emitting diode display device according to

claim 15

, wherein the first encapsulation layer comprises a polymer.

17. The organic light emitting diode display device according to

claim 16

, wherein the polymer comprises a parylene.

18. The organic light emitting diode display device according to

claim 17

, wherein the polymer comprises a polymer selected from the group consisting of parylene N, parylene C, and parylene D.

19. The organic light emitting diode display device according to

claim 18

, wherein the polymer comprises parylene C.

20. An upwardly emitting organic light emitting diode display device comprising a substrate, at least one organic light emitting diode device formed thereon, and an encapsulation assembly formed over the substrate and the at least one organic light emitting diode device, the encapsulation assembly comprising:

a first encapsulation oxide layer comprising Al₂O₃ deposited using a process selected from the group consisting of ALD and ALE, wherein the first encapsulation oxide layer lies over and is in direct contact with both the substrate and the at least one organic light emitting diode device; and

a second encapsulation polymer layer, wherein the second encapsulation layer comprises parylene C and covers the first encapsulation layer.

21. The organic light emitting diode display device according to

claim 20

further comprising a layer of SiO₂, wherein the layer of SiO₂, lies over and covers the second encapsulation polymer layer.

22. An upwardly emitting organic light emitting diode display device comprising a substrate, at least one organic light emitting diode device formed thereon, and an encapsulation assembly formed over the substrate and the at least one organic light emitting diode device, the encapsulation assembly comprising:

a first encapsulation oxide layer consisting essentially of Al₂O₃ deposited using a process selected from the group consisting of ALE and ALD, wherein the Al₂O₃ of the first encapsulation oxide layer lies over and is in direct contact with both the substrate and the at least one organic light emitting diode device; and

a second encapsulation polymer layer, wherein the second encapsulation layer consists essentially of parylene C and lies over and covers the first encapsulation layer.

23. The organic light emitting diode display device according to

claim 22

wherein the Al₂O₃ is deposited using ALD.

24. The organic light emitting diode display device according to

claim 23

further comprising a third encapsulation layer consisting essentially of SiO₂, wherein the third encapsulation layer lies over and covers the second encapsulation polymer layer.

25. A method of encapsulating an organic light emitting diode display device, wherein the organic light emitting diode display device comprises a substrate, and at least one organic light emitting diode device formed thereon, the method comprising the steps of:

depositing a first encapsulation dielectric oxide layer using a method selected from the group consisting of ALE and ALD, wherein the encapsulation dielectric oxide layer lies over and in direct contact with both the substrate and the at least one organic light emitting diode device; and

depositing a second encapsulation layer, wherein the second encapsulation layer covers the first encapsulation layer.

26. A method of encapsulating an organic light emitting diode display device, wherein the organic light emitting diode display device comprises a substrate, and at least one organic light emitting diode device formed thereon, the method comprising the steps of:

depositing a first encapsulation dielectric oxide layer using a method selected from the group consisting of ALE and ALD, wherein the first encapsulation oxide layer lies over and is in direct contact with both the substrate and the at least one organic light emitting diode device; and

depositing a second encapsulation polymer layer, wherein the second encapsulation layer covers the first encapsulation layer.

28. The method according to

claim 26

, wherein the step of depositing the oxide layer uses ALD.

29. The method according to

claim 26

, wherein the step of depositing the second encapsulation polymer layer is performed with each of the substrate, the at least one organic light emitting device thereon and the first dielectric oxide encapsulation layer at room temperature.

30. The method according to

claim 26

, wherein the step of depositing the second encapsulation polymer layer further comprises a step of forming vapor phase monomer species able to condense and polymerize on the first dielectric oxide encapsulation layer at a temperature less than about 40°

C.