Thermosetting resin composition
First Claim
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1. A thermosetting resin composition comprising:
- (A) a polyaddition thermosetting resin;
(B) a silane compound represented by the formula;
wherein R is an organic group containing a functional group which causes an addition reaction with the curing agent of said polyaddition thermosetting resin; and
R1, R2, R3 and R4 are each a silicic group having 0 to 3 recurring units of (SiRO3/2); and
(C) a curing agent for said polyaddition thermosetting resin.
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Abstract
A semiconductor device includes a circuit substrate having the metallic bumps electrically connected through lands on both the front side of the substrate where the semiconductor elements are to be mounted and the opposite side thereof. The semiconductor elements are connected to the metallic bumps on the front side of the substrate and a thermosetting resin composition containing a spherical filler is disposed between the semiconductor elements and the substrate.
9 Citations
6 Claims
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1. A thermosetting resin composition comprising:
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(A) a polyaddition thermosetting resin;
(B) a silane compound represented by the formula;
wherein R is an organic group containing a functional group which causes an addition reaction with the curing agent of said polyaddition thermosetting resin; and
R1, R2, R3 and R4 are each a silicic group having 0 to 3 recurring units of (SiRO3/2); and
(C) a curing agent for said polyaddition thermosetting resin.
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2. A process for producing a thermosetting resin composition, comprising
a step of heat treating a mixture of: -
(A) a polyaddition thermosetting resin;
(B) a silane compound represented by the formula;
wherein R is an organic group containing a functional group which causes an addition reaction with said curing agent; and
R5 and R6 are independently a methyl group or an ethyl group, and(D) water, at 60 to 160°
C. for 1 to 10 hours, anda step of adding (C) a curing agent of said polyaddition thermosetting resin to said mixture which has undergone said heat treatment.
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3. A resin encapsulated semiconductor device comprising a semiconductor device encapsulated with a thermosetting resin composition comprising:
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(A) a polyaddition thermosetting resin;
(B) a silane compound represented by the formula;
wherein R is an organic group containing a functional group which causes an addition reaction with the curing agent of said polyaddition thermosetting resin; and
R1, R2, R3 and R4 are each a silicic group having 0 to 3 recurring units of (SiRO3/2); and
(C) a curing agent for said polyaddition thermosetting resin.
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4. A film of thermosetting resin composition comprising:
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(A) a polyaddition thermosetting resin;
(B) a silane compound represented by the formula;
wherein R is an organic group containing a functional group which causes an addition reaction with the curing agent of said polyaddition thermosetting resin; and
R1, R2, R3 and R4 are each a silicic group having 0 to 3 recurring units of (SiRO3/2); and
(C) a curing agent for said polyaddition thermosetting resin.
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5. A printed circuit substrate comprising a glass cloth impregnated with a thermosetting resin composition comprising:
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(A) a polyaddition thermosetting resin;
(B) a silane compound represented by the formula;
wherein R is an organic group containing a functional group which causes an addition reaction with the curing agent of said polyaddition thermosetting resin; and
R1, R2, R3 and R4 are each a silicic group having 0 to 3 recurring units of (SiRO3/2); and
(C) a curing agent for said polyaddition thermosetting resin.
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6. A semiconductor device comprising a circuit substrate having the metallic bumps electrically connected through lands on both the front side of the substrate where the semiconductor elements are to be mounted and the opposite side thereof, said semiconductor elements being connected to said metallic bumps on said front side of the substrate, wherein a thermosetting resin composition containing a spherical filler is disposed between said semiconductor elements and said substrate.
Specification