SEMICONDUCTOR DEVICE

• US 20020000613A1
• Filed: 11/23/1998
• Published: 01/03/2002
• Est. Priority Date: 11/27/1997
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: OHTANI, HISASHI, MURAKAMI, SATOSHI, NAKAZAWA, MISAKO
• Granted Patent: US 7,202,497 B2
• Time in Patent Office: Days
• US Class Current: 257/347
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52

Abstract

A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each other with an embedded conductive layer or an oxide conductive layer provided as filling an opening formed in the insulating layer, and the embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein.

Claims

1. A semiconductor device comprising:

two conductive layers provided as separate layers;

an insulating layer sandwiched by said two conductive layers; and

an embedded conductive layer provided to fill an opening formed in said insulating layer,

wherein said two conductive layers are electrically connected to each other with said embedded conductive layer and

wherein said embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein.

7. A semiconductor device according to claim 1, wherein said conductive material is a carbon material.

10. A semiconductor device according to claim 1, wherein said conductive material is selected from the group consisting of zinc oxide, aluminum flakes and nickel flakes.

16. A semiconductor device according to claim 1, wherein one of said two conductive layers is in contact with an alignment film.

22. A semiconductor device according to claim 1, 2, 3, 4, 5 or 6 is applied to a display device of a cellular phone.

23. A semiconductor device according to claim 1, 2, 3, 4, 5 or 6 is applied to a display device of a camcorder.

24. A semiconductor device according to claim 1, 2, 3, 4, 5 or 6 is applied to a display device of a portable computer.

25. A semiconductor device according to claim 1, 2, 3, 4, 5 or 6 is applied to a display device of a head mounting display.

26. A semiconductor device according to claim 1, 2, 3, 4, 5 or 6 is applied to a display device of a rear type projector.

27. A semiconductor device according to claim 1, 2, 3, 4, 5 or 6 is applied to a display device of a front type projector.

2. A semiconductor device comprising:

two conductive layers provided as separate layers;

an insulating layer sandwiched by said two conductive layers; and

an oxide conductive layer provided to fill an opening formed in said insulating layer,

wherein said two conductive layers are electrically connected to each other with said oxide conductive layer.

13. A semiconductor device according to claim 2, wherein said oxide conductive layer comprises indium tin oxide.

17. A semiconductor device according to claim 2, wherein one of said two conductive layers is in contact with an alignment film.

3. A semiconductor device comprising:

two conductive layers provided as separate layers;

an insulating layer sandwiched by said two conductive layers; and

an embedded conductive layer provided to fill an opening formed in said insulating layer,

wherein said two conductive layers are electrically connected to each other with said embedded conductive layer,

wherein said embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material therein, and

wherein a shape of said opening is in accordance with a shape of said embedded conductive layer embedded in said opening.

8. A semiconductor device according to claim 3, wherein said conductive material is a carbon material.

11. A semiconductor device according to claim 3, wherein said conductive material is selected from the group consisting of zinc oxide, aluminum flakes and nickel flakes.

18. A semiconductor device according to claim 3, wherein one of said two conductive layers is in contact with an alignment film.

4. A semiconductor device comprising:

two conductive layers provided as separate layers;

an insulating layer sandwiched by said two conductive layers; and

an oxide conductive layer provided to fill an opening formed in said insulating layer,

wherein said two conductive layers are electrically connected to each other with said oxide conductive layer, and

wherein a shape of said opening is in accordance with a shape of said oxide conductive layer embedded in said opening.

14. A semiconductor device according to claim 4, wherein said oxide conductive layer comprises indium tin oxide.

19. A semiconductor device according to claim 4, wherein one of said two conductive layers is in contact with an alignment film.

5. A semiconductor device comprising:

two conductive layers provided as separate layers;

an insulating layer sandwiched by said two conductive layers; and

an embedded conductive layer provided to fill an opening formed in said insulating layer,

wherein said two conductive layers are electrically connected to each other with said embedded conductive layer,

wherein said embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein, and

wherein one of said two conductive layers is provided on a flat surface formed by said embedded conductive layer.

9. A semiconductor device according to claim 5, wherein said conductive material is a carbon material.

12. A semiconductor device according to claim 5, wherein said conductive material is selected from the group consisting of zinc oxide, aluminum flakes and nickel flakes.

20. A semiconductor device according to claim 5, wherein one of said two conductive layers is in contact with an alignment film.

6. A semiconductor device comprising:

two conductive layers provided as separate layers;

an insulating layer sandwiched by said two conductive layers; and

an oxide conductive layer provided to fill an opening formed in said insulating layer,

wherein said two conductive layers are electrically connected to each other with said oxide conductive layer, and

wherein one of said two conductive layers is provided on a flat surface formed by said oxide conductive layer.

15. A semiconductor device according to claim 6, wherein said oxide conductive layer comprises indium tin oxide.

21. A semiconductor device according to claim 6, wherein one of said two conductive layers is in contact with an alignment film.

28. A method for producing a semiconductor device comprising:

a step of forming a first conductive layer;

a step of forming an insulating layer over said first conductive layer;

a step of forming an opening in said insulating layer to expose said first conductive layer at a bottom of said opening;

a step of forming an embedded conductive layer to cover said insulating layer and said opening;

a step of etching or polishing said embedded conductive layer to make a state in that only said opening is filled with said embedded conductive layer; and

a step of forming a second conductive layer on said insulating layer and said embedded conductive layer.

32. A method for producing a semiconductor device according to claim 28, wherein said embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein.

34. A method for producing a semiconductor device according to claim 32, wherein said conductive material is a carbon material.

36. A method for producing a semiconductor device according to claim 32, wherein said conductive material is selected from the group consisting of zinc oxide, aluminum flakes and nickel flakes.

29. A method for producing a semiconductor device comprising:

a step of forming a first conductive layer;

a step of forming an insulating layer over said first conductive layer;

a step of forming an opening in said insulating layer to expose said first conductive layer at a bottom of said opening;

a step of forming an oxide conductive layer by a spin coating method to cover said insulating layer and said opening;

a step of etching or polishing said oxide conductive layer to make a state in that only said opening is filled with said oxide conductive layer; and

a step of forming a second conductive layer on said insulating layer and said oxide conductive layer.

38. A method for producing a semiconductor device according to claim 29, wherein said oxide conductive layer comprises indium tin oxide.

30. A method for producing a semiconductor device comprising:

a step of forming a first conductive layer;

a step of forming an insulating layer over said first conductive layer;

a step of forming an opening in said insulating layer to expose said first conductive layer at a bottom of said opening;

a step of forming an embedded conductive layer to cover said insulating layer and said opening;

a step of forming a second conductive layer on said embedded conductive layer;

a step of patterning said second conductive layer to a desired pattern; and

a step of etching said embedded conductive layer by using said second conductive layer as a mask in a self alignment manner.

33. A method for producing a semiconductor device according to claim 30, wherein said embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein.

35. A method for producing a semiconductor device according to claim 33, wherein said conductive material is a carbon material.

37. A method for producing a semiconductor device according to claim 33, wherein said conductive material is selected from the group consisting of zinc oxide, aluminum flakes and nickel flakes.

31. A method for producing a semiconductor device comprising:

a step of forming a first conductive layer;

a step of forming an insulating layer over said first conductive layer;

a step of forming an opening in said insulating layer to expose said first conductive layer at a bottom of said opening;

a step of forming an oxide conductive layer by a spin coating method to cover said insulating layer and said opening;

a step of forming a second conductive layer on said oxide conductive layer;

a step of patterning said second conductive layer to a desired pattern, and

a step of etching said oxide conductive layer by using said second conductive layer as a mask in a self alignment manner.

39. A method for producing a semiconductor device according to claim 31, wherein said oxide conductive layer comprises indium tin oxide.