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Metallization structures for semiconductor device interconnects, methods for making same, and semiconductor devices including same

  • US 20020001943A1
  • Filed: 04/09/2001
  • Published: 01/03/2002
  • Est. Priority Date: 09/01/1999
  • Status: Active Grant
First Claim
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1. A method for making a metallization structure for a semiconductor device, comprising:

  • forming a substantially planar first dielectric layer on a substrate;

    forming at least one metal layer over the first dielectric layer;

    forming a conducting layer over the metal layer;

    forming a second dielectric layer over the conducting layer;

    removing aligned portions of the second dielectric layer, conducting layer, and metal layer to form a multi-layer structure; and

    forming metal spacers on sidewalls of the multi-layer structure.

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