Method for manufacturing zirconium oxide film for use in semiconductor device
First Claim
1. A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD), the method comprising steps of:
- a) setting a wafer in a reaction chamber;
b) supplying a zirconium source material of Zr(OC(CH3)3)4 (zirconium tetra—
tert—
butoxide) into the reaction chamber;
c) purging out unreacted Zr(OC(CH3)3)4;
d) supplying an oxygen source material into the reaction chamber; and
e) purging out unreacted oxygen source material.
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Accused Products
Abstract
A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD) which begins with setting a wafer in a reaction chamber. Thereafter, a zirconium source material of Zr(OC(CH3)3)4 (zirconium tetra—tert—butoxide) is supplied into the reaction chamber and then, an unreacted Zr(OC(CH3)3)4 is removed by a N2 purge or a vacuum purge. Subsequently, an oxygen source material is supplied into the reaction chamber, wherein the oxygen source material is selected from the group consisting of vaporized water (H2O), O2 gas, N2O gas and O3 gas. Finally, an unreacted oxygen source material is purged out from the reaction chamber.
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Citations
25 Claims
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1. A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD), the method comprising steps of:
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a) setting a wafer in a reaction chamber;
b) supplying a zirconium source material of Zr(OC(CH3)3)4 (zirconium tetra—
tert—
butoxide) into the reaction chamber;
c) purging out unreacted Zr(OC(CH3)3)4;
d) supplying an oxygen source material into the reaction chamber; and
e) purging out unreacted oxygen source material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD), the method comprising steps of:
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a) setting a wafer in a reaction chamber;
b) supplying a zirconium source material of Zr(OC(CH3)3)4 into the reaction chamber;
c) purging out unreacted Zr (OC (CH3)3)4;
d) supplying nitrogen species gas into the reaction chamber; and
e) purging out unreacted nitrogen species gas. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification