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Method for manufacturing zirconium oxide film for use in semiconductor device

  • US 20020001974A1
  • Filed: 06/20/2001
  • Published: 01/03/2002
  • Est. Priority Date: 06/30/2000
  • Status: Active Grant
First Claim
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1. A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD), the method comprising steps of:

  • a) setting a wafer in a reaction chamber;

    b) supplying a zirconium source material of Zr(OC(CH3)3)4 (zirconium tetra—

    tert—

    butoxide) into the reaction chamber;

    c) purging out unreacted Zr(OC(CH3)3)4;

    d) supplying an oxygen source material into the reaction chamber; and

    e) purging out unreacted oxygen source material.

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