Method for manufacturing zirconium oxide film for use in semiconductor device

• US 20020001974A1
• Filed: 06/20/2001
• Published: 01/03/2002
• Est. Priority Date: 06/30/2000
• Status: Active Grant

• Current Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Original Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Inventors: Chan, Lim
• Granted Patent: US 6,465,371 B2
• Time in Patent Office: Days
• US Class Current: 438/785
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45534 Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/31691 with perovskite structure

Abstract

A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD) which begins with setting a wafer in a reaction chamber. Thereafter, a zirconium source material of Zr(OC(CH₃)₃)₄ (zirconium tetra—tert—butoxide) is supplied into the reaction chamber and then, an unreacted Zr(OC(CH₃)₃)₄ is removed by a N₂ purge or a vacuum purge. Subsequently, an oxygen source material is supplied into the reaction chamber, wherein the oxygen source material is selected from the group consisting of vaporized water (H₂O), O₂ gas, N₂O gas and O₃ gas. Finally, an unreacted oxygen source material is purged out from the reaction chamber.

Claims

1. A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD), the method comprising steps of:

a) setting a wafer in a reaction chamber;

b) supplying a zirconium source material of Zr(OC(CH₃)₃)₄ (zirconium tetra—

tert—

butoxide) into the reaction chamber;

c) purging out unreacted Zr(OC(CH3)₃)₄;

d) supplying an oxygen source material into the reaction chamber; and

e) purging out unreacted oxygen source material.

2. The method as recited in claim 1, wherein the steps b) to e) are repeated several times until the zirconium oxide film is formed to a predetermined thickness.

3. The method as recited in claim 1, after the step e), further comprising the step of carrying out an oxygen gas plasma selected from the group consisting of UV—

O₃, N₂O, O₂ and O₃.

4. The method as recited in claim 1, wherein the Zr(OC(CH₃)₃)₄ is supplied simultaneously with NH₃ gas into the reaction chamber through respective supply-pipes.

5. The method as recited in claim 4, wherein a flux of NH₃ gas ranges from approximately 20 sccm to approximately 1,000 sccm.

6. The method as recited in claim 1, wherein the Zr(OC(CH₃)₃)₄ and a mixed gas of hydrogen gas (H₂) and nitrogen gas (N₂) are supplied simultaneously into the reaction chamber through respective supply-pipes.

7. The method as recited in claim 6, wherein a flux of the mixed gas of H₂ and N₂ ranges from approximately 20 sccm to approximately 1,000 sccm.

8. The method as recited in claim 1, wherein the oxygen source material is supplied simultaneously with NH₃ gas into the reaction chamber through a common supply-pipe.

9. The method as recited in claim 8, wherein a flux of NH₃ gas ranges from approximately 20 sccm to approximately 1,000 sccm.

10. The method as recited in claim 1, wherein the oxygen source material and a mixed gas of hydrogen gas (H₂) and nitrogen gas (N₂) are supplied simultaneously into the reaction chamber through a common supply-pipe.

11. The method as recited in claim 10, wherein a flux of the mixed gas of H₂ and N₂ ranges from approximately 20 sccm to approximately 1,000 sccm.

12. The method as recited in claim 1, wherein the oxygen source material is selected from the group consisting of vaporized water (H₂O), O₂ gas, N₂O gas and O₃ gas.

13. The method as recited in claim 1, wherein the step c) is carried out by using a method selected from the group consisting of a nitrogen gas (N₂) purge and a vacuum purge.

14. The method as recited in claim 1, wherein the step e) is carried out by using a method selected from the group consisting of a nitrogen gas (N₂) purge and a vacuum purge.

15. The method as recited in claim 1, wherein a temperature of the wafer ranges from approximately 250°

C. to approximately 450°

C.

16. The method as recited in claim 1, wherein a pressure in the reaction chamber ranges from approximately 100 mTorr to approximately 3 Torr.

17. The method as recited in claim 1, wherein the steps b) and d) are each carried out for a period of approximately 0.1 seconds to approximately 5 seconds.

18. The method as recited in claim 1, wherein the steps c) and e) are each carried out for a period of approximately 0.1 seconds to approximately 5 seconds.

19. A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD), the method comprising steps of:

a) setting a wafer in a reaction chamber;

b) supplying a zirconium source material of Zr(OC(CH₃)₃)₄ into the reaction chamber;

c) purging out unreacted Zr (OC (CH₃)₃)₄;

d) supplying nitrogen species gas into the reaction chamber; and

e) purging out unreacted nitrogen species gas.

20. The method as recited in claim 19, wherein the nitrogen species gas is selected from the group consisting of NH₃ gas and a mixed gas of H₂ and N₂.

21. The method as recited in claim 19, wherein the steps b) to e) are repeated several times until the zirconium oxide film is formed to a predetermined thickness.

22. The method as recited in claim 19, after the step e), further comprising the step of carrying out an oxygen gas plasma selected from the group consisting of UV—

O₃, N₂O, O₂ and O₃.

23. The method as recited in claim 19, wherein the Zr(OC(CH₃)₃)₄ is supplied simultaneously with NH₃ gas into the reaction chamber through respective supply-pipes.

24. The method as recited in claim 19, wherein the Zr(OC(CH₃)₃)₄ and a mixed gas of H₂ and N₂ are supplied simultaneously into the reaction chamber through respective supply-pipes.

25. The method as recited in claim 19, wherein the step c) is carried out by using a method selected from the group consisting of a nitrogen gas (N₂) purge and a vacuum purge.