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Method of forming a trench isolation structure comprising annealing the oxidation barrier layer thereof in a furnace

  • US 20020004282A1
  • Filed: 05/03/2001
  • Published: 01/10/2002
  • Est. Priority Date: 07/10/2000
  • Status: Active Grant
First Claim
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1. A trench isolation method comprising the steps of:

  • forming a trench in a semiconductor substrate;

    forming an oxidation barrier layer on an inner wall of the substrate that defines the trench;

    once the oxidation barrier layer has been formed, annealing the structure in a furnace until the oxidation barrier layer is densified throughout substantially its entire thickness; and

    subsequently forming an insulating layer in the trench on the annealed oxidation barrier layer.

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