Method of forming a trench isolation structure comprising annealing the oxidation barrier layer thereof in a furnace

• US 20020004282A1
• Filed: 05/03/2001
• Published: 01/10/2002
• Est. Priority Date: 07/10/2000
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Hong, Soo-Jin
• Granted Patent: US 6,583,025 B2
• Time in Patent Office: Days
• US Class Current: 438/424
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264

Abstract

A method of forming a trench isolation structure prevents a nitride liner from being over-etched, i.e., prevents the so-called dent phenomenon from occurring. An etching mask pattern is formed on a semiconductor substrate. A trench is formed in the substrate by using the etching mask pattern as an etching mask. A nitride liner, serving as an oxidation barrier layer, is formed at the sides and bottom of the trench, and is then annealed in a furnace to density the same. In a subsequent etching process, such as that used to remove the etching mask pattern, the densified nitride liner resists being etched. Accordingly, a trench isolation structure having a good profile is produced.

Claims

1. A trench isolation method comprising the steps of:

forming a trench in a semiconductor substrate;

forming an oxidation barrier layer on an inner wall of the substrate that defines the trench;

once the oxidation barrier layer has been formed, annealing the structure in a furnace until the oxidation barrier layer is densified throughout substantially its entire thickness; and

subsequently forming an insulating layer in the trench on the annealed oxidation barrier layer.

2. The method as claimed in claim 1, wherein said step of forming the oxidation barrier layer comprises forming a layer of silicon nitride on the inner wall of the substrate that defines the trench.

3. The method as claimed in claim 1, wherein said step of annealing comprises annealing the oxide barrier layer at a temperature of at least 1000°

C. in a nitrogen ambient.

4. The method as claimed in claim 1, wherein said step of annealing process comprises annealing the oxide barrier layer at a temperature of at least 800°

C. in an oxygen and water vapor ambient.

5. The method as claimed in claim 1, and further comprising a step of densifying the insulating layer.

6. The method as claimed in claim 5, wherein said step of densifying comprises annealing the insulating layer at a temperature of 600-800°

C. in a nitrogen ambient.

7. The method as claimed in claim 5, wherein said step of densifying comprises annealing the insulating layer at a temperature of 700-900°

C. in a water vapor ambient.

8. The method as claimed in claim 1, wherein said step of forming the trench comprises forming an etching mask pattern on the substrate, the etching mask pattern exposing a predetermined area of the substrate, and etching the exposed area of the substrate using the etching mask pattern as an etching mask.

9. The method as claimed in claim 7, wherein the forming the etching mask pattern comprises forming a pad oxide layer on the substrate, forming a silicon nitride layer on the pad oxide layer, and sequentially patterning the silicon nitride layer and the pad oxide layer to expose the predetermined area of the substrate.

10. The method as claimed in claim 1, and further comprising a step of forming an oxide liner between the inner wall that defines the trench and the oxidation barrier layer.

11. The method as claimed in claim 10, wherein the oxide liner is made of a material selected from the group consisting of thermal oxides, chemical vapor deposition (CVD) oxides, and a combination thereof.

12. The method as claimed in claim 1, and further comprising a step of forming a capping layer between the oxidation barrier layer and the insulating layer.

13. A trench isolation method comprising the steps of:

forming an etching mask pattern on a substrate, the etching mask pattern exposing a predetermined area of the substrate;

etching the exposed area of the substrate using the etching mask pattern as an etching mask to form a trench in the substrate;

forming an oxidation barrier layer on an inner wall of the substrate that defines the trench;

once the oxidation barrier layer has been formed, annealing the structure in a furnace until the oxidation barrier layer is densified throughout substantially its entire thickness;

subsequently forming an insulating layer in the trench on the annealed oxidation barrier layer; and

after the oxidation barrier layer has been annealed, etching away the etching mask pattern.

14. The method as claimed in claim 13, wherein said step of annealing comprises annealing the oxide barrier layer at a temperature of at least 1000°

C. in a nitrogen ambient.

15. The method as claimed in claim 14, wherein said step of forming the oxidation barrier layer comprises forming a layer of silicon nitride on the inner wall of the substrate that defines the trench, and said step of annealing comprises annealing the layer of silicon nitride at 1050°

C. for one hour.

16. The method as claimed in claim 13, wherein said step of annealing process comprises annealing the oxide barrier layer at a temperature of at least 800°

C. in an oxygen and water vapor ambient.

17. The method as claimed in claim 13, and further comprising a step of densifying the insulating layer.

18. The method as claimed in claim 17, wherein said step of densifying comprises annealing the insulating layer in a nitrogen ambient.

19. The method as claimed in claim 17, wherein said step of densifying comprises annealing the insulating layer at a temperature of 700-900°

C. in a water vapor ambient.