SYSTEMS AND METHODS FOR VARIABLE MODE PLASMA ENHANCED PROCESSING OF SEMICONDUCTOR WAFERS
First Claim
1. A reactor system for assisting the removal of residue from a wafer, the reactor system comprising:
- a reactor chamber within which a plasma is generated to produce plasma products for assisting the removal of residue from the wafer wherein the plasma products include charged particles and neutral species;
a gas inlet through which gas is provided to the reactor chamber;
means for generating the plasma, the means for generating the plasma being adjacent to the plasma;
a support for the wafer positioned inside the chamber such that the wafer on the support is exposed to at least one plasma product during processing wherein a soluble compound is formed on the wafer from the chemical interaction of the plasma with the residue on the wafer.
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Abstract
Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed on the surface of the wafer. Variable mode processes may be adapted for (i) removal of photoresist after high-dose ion implant, (ii) post metal etch polymer removal, (iii) via clean, and (iv) other plasma enhanced processes.
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Citations
21 Claims
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1. A reactor system for assisting the removal of residue from a wafer, the reactor system comprising:
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a reactor chamber within which a plasma is generated to produce plasma products for assisting the removal of residue from the wafer wherein the plasma products include charged particles and neutral species;
a gas inlet through which gas is provided to the reactor chamber;
means for generating the plasma, the means for generating the plasma being adjacent to the plasma;
a support for the wafer positioned inside the chamber such that the wafer on the support is exposed to at least one plasma product during processing wherein a soluble compound is formed on the wafer from the chemical interaction of the plasma with the residue on the wafer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A plasma reactor for processing a semiconductor wafer comprising:
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a reactor chamber within which a plasma is generated to produce plasma products for processing the semiconductor wafer wherein the plasma products include charged particles and neutral species;
a gas inlet through which gas is provided to the reactor chamber;
an electrode adjacent to the plasma;
a power source operatively coupled to the electrode to provide power to the plasma;
a support for the semiconductor wafer positioned such that the wafer is exposed to at least one plasma product during processing;
means for controlling the plasma potential relative to the support such that the semiconductor wafer is processed in at least two modes, a first mode and a second mode;
wherein the plasma potential relative to the support in the first mode induces bombardment of the semiconductor wafer by charged particles from the plasma at a desired level for processing during the first mode;
wherein the plasma potential relative to the support in the second mode is controlled to substantially reduce bombardment of the semiconductor wafer by charged particles during the second mode; and
wherein the semiconductor wafer is exposed to neutral species from the plasma at a desired level for processing during the second mode. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method for processing a semiconductor wafer comprising:
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generating a plasma to produce charged particles and neutral species;
inducing bombardment of the semiconductor wafer by charged particles from the plasma at a first level for a first mode of processing;
limiting bombardment of the semiconductor wafer to a level substantially less than the first level for a second mode of processing; and
exposing the semiconductor wafer to neutral species from the plasma during the second mode at a desired level for processing;
wherein the semiconductor wafer is selectively processed using both the first and the second modes of processing. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification