Semiconductor device
First Claim
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1. A semiconductor device having a plurality of functional elements formed on a substrate comprising:
- a slice line for cutting said substrate which is arranged along the outer periphery of said substrate, and a peripheral wire arranged between said slice line and said functional elements.
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Abstract
A semiconductor device with which a panel having a large area or a narrowly margined with the circumferential space minimized can be manufactured stably with a high yield. The semiconductor device comprises a TFT substrate having a plurality of pixels of a plurality of TFT (thin film transistors) provided on the substrate in which a peripheral wire is arranged along the outer periphery of the TFT substrate and connected to a constant potential.
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Citations
37 Claims
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1. A semiconductor device having a plurality of functional elements formed on a substrate comprising:
a slice line for cutting said substrate which is arranged along the outer periphery of said substrate, and a peripheral wire arranged between said slice line and said functional elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10, 11)
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9. The semiconductor device according to claim 9, wherein
said substrate is an insulator.
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12. A semiconductor device having:
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a plurality of functional elements formed on a substrate;
comprisinga peripheral wire arranged along the outer periphery of said substrate and connected to a reference voltage source. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor device comprising a TFT substrate having a plurality of pixels of a plurality of TFT (thin film transistors) provided on the substrate,
wherein drive wires of said TFT are connected by way of a wire resistance Rs; -
each of the pixels on said TFT substrate comprises said TFT and a photoelectric converter element, bias wires of said photoelectric converter elements and drive wires of said TFT being connected;
said TFT substrate has a slice line for cutting said TFT substrate arranged along the outer periphery thereof; and
a peripheral wire is arranged between said slice line and said TFT substrate. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 34, 35, 36, 37)
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31. A radiation detection apparatus comprising:
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a radiation source, and a TFT substrate having a plurality of pixels of a plurality of TFT (thin film transistors) provided on the substrate, wherein each of the pixels on said TFT substrate comprises said TFT and a photoelectric converter element, bias wires of said photoelectric converter elements and drive wires of said TFT being connected;
said TFT substrate has a slice line for cutting said TFT substrate arranged along the outer periphery thereof; and
a peripheral wire is arranged between said slice line and said TFT substrate. - View Dependent Claims (32, 33)
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Specification