Exposure apparatus, method for manufacturing thereof, method for exposing and method for manufacturing microdevice

• US 20020005940A1
• Filed: 05/22/2001
• Published: 01/17/2002
• Est. Priority Date: 05/22/2000
• Status: Active Grant

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Hatada, Hitoshi, Kato, Masaki, Shirasu, Hiroshi, Koyama, Motoo, Iguchi, Masahiro
• Granted Patent: US 6,811,953 B2
• Time in Patent Office: Days
• US Class Current: 355/55
• CPC Class Codes: G03F 7/70275 Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
• CPC Class Codes: G03F 7/70358 Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
• CPC Class Codes: G03F 9/7026 Focusing

Abstract

The memory unit stores the correlation of the positional change in the image planes of the projection optical modules in the focusing direction and the light quantity change. The image plane position determination unit finds the positional change value of the image planes of the projection optical modules based on the correlation information that is stored in the memory unit and the information on changes in the amount of light that is emitted to the projection optical modules. The compensation value calculating unit calculates the compensation value corresponding to the change in the amount of curvature in the image planes of the projection optical modules. The compensating unit compensates the change value in conformity with the compensation value. The focus compensation optical system is driven based on the change value that is compensated.

Claims

1. An exposure apparatus, comprising:

an illumination optical system, which illuminates a mask with a predetermined pattern;

a projection optical system, which includes a plurality of projection optical modules that are arrayed in a predetermined direction in order to form partially overlapping exposure regions on a photosensitive substrate, and projects the pattern of said mask onto said photosensitive substrate; and

,

a focusing adjustment unit, which aligns each respective image plane of said plurality of projection optical modules with respect to said photosensitive substrate in a certain focusing direction;

wherein said focusing adjustment unit sets at a substantially same position in said certain focusing direction, certain portions that contribute to formation of said partially overlapping exposure regions on image planes of projection optical modules that are next to each other.

2. The exposure apparatus according to claim 1, further comprising:

a measurement unit for measuring, in order to measure positional change in said certain focusing direction of image plane of at least one projection optical module of said plurality of projection optical modules, a portion of light to image plane of said at least one projection optical module; and

a computation unit for finding a compensation value that correlates to each respective amount of curvature of field of said plurality of projection optical modules based on measurement information of said measurement unit;

wherein said focusing adjustment unit adjusts position of each respective image plane of said plurality of projection optical modules based on output from said computation unit.

3. The exposure apparatus according to claim 2,

wherein said computation unit further comprising:

an image plane position determination unit, which determines position of each respective image plane of said plurality of projection optical modules based on measurement information of said measurement unit; and

a compensating unit, which compensates the position of each respective image plane of said plurality of projection optical modules established in said determination unit based on a compensation value corresponding to each respective amount of image plane curvature of said plurality of projection optical modules.

4. The exposure apparatus according to claim 3,

wherein said computation unit further comprising:

a memory unit, which stores correlation between a change in position in said certain focusing direction of image plane of at least one projection optical module of said plurality of projection optical modules and a light quantity change measured by said measuring unit; and

said image plane position determination unit determines position of each respective image plane of said plurality of projection optical modules based on information of said memory unit and measurement information of said measurement unit.

5. The exposure apparatus according to claim 3,

wherein said computation unit further comprising:

a compensation value memory unit, which stores a compensation value corresponding to each respective amount of image plane curvature of said plurality of projection optical modules; and

said compensating unit compensates position of each respective image plane of said plurality of projection optical modules established in said image plane position determination unit based on memory information of said compensation value memory unit.

6. The exposure apparatus according to claim 3,

wherein said computation unit further comprising:

a compensation value calculating unit, which calculates a compensation value corresponding to each respective amount of image plane curvature of said plurality of projection optical modules based on measurement information of said measurement unit; and

said compensating unit compensates position of each respective image plane of said plurality of projection optical modules established in said image plane position determination unit based of each compensation value obtained by said compensation value calculating unit.

7. The exposure apparatus according to claim 3,

wherein said computation unit further comprising:

a memory unit, which stores correlation between a change in position in said certain focusing direction of a portion that contributes to formation of said partially overlapping exposure region in said image plane of at least one projection optical module of said plurality of projection optical modules and a light quantity change measured by said measuring unit; and

said image plane position determination unit determines position of each respective image plane of said plurality of projection optical modules based on information of said memory unit and measurement information of said measurement unit.

22. A microdevice manufacturing method, comprising:

an exposure step of exposing a pattern of said mask using the exposure apparatus according to claim 1 to said photosensitive substrate; and

a developing step of developing said substrate that is exposed.

62. The exposure method according to claim 6l, further comprising:

an exposure step of moving in a scanning direction that crosses said given direction said mask and said photosensitive substrate against said projection optical system, and then scan exposing said pattern formed on said mask onto said photosensitive substrate via said projection optical system.

8. An exposure apparatus comprising:

an illumination optical system, which illuminates a mask with a predetermined pattern;

a projection optical system, which includes a plurality of projection optical modules that are arrayed in a predetermined direction, and projects the pattern of said mask onto a photosensitive substrate;

a first adjusting unit, which compensates a change of a first optical characteristic in accordance with time passage with respect to at least one projection optical module of said plurality of projection optical modules; and

a second adjusting unit, which compensates a second optical characteristic that differs from said first optical characteristic and is caused by said first adjusting unit.

9. The exposure apparatus according to claim 8, wherein said changes over time develop due to light that is irradiated from said illumination optical system via said mask to said at least one projection optical module.

67. A microdevice manufacturing method, comprising:

an exposure step of exposing a pattern of said mask using the exposure apparatus according to claim 8 to said photosensitive substrate; and

a developing step of developing said substrate that is exposed.

10. An exposure apparatus comprising:

an illumination optical system, which illuminates a mask with a predetermined pattern;

a projection optical system, which includes a plurality of projection optical modules that are arrayed in a predetermined direction, and projects the pattern of said mask onto a photosensitive substrate;

a first adjusting unit, which compensates a change of an optical characteristic with respect to at least one of said plurality of projection optical modules that develop due to heat deformation of at least one optical component that is included in each of respective said plurality of projection optical modules; and

a second adjusting unit, which compensates a change of an optical characteristic with respect to said plurality of projection optical modules that develop due to heat deformation of at least one deflecting member included in each of respective said plurality of projection modules.

11. The exposure apparatus according to claim 10, wherein said at least one optical component comprises a lens.

68. A microdevice manufacturing method, comprising:

an exposure step of exposing a pattern of said mask using the exposure apparatus according to claim 10 to said photosensitive substrate; and

a developing step of developing said substrate that is exposed.

12. An exposure apparatus, comprising:

an illumination optical system, which illuminates a mask with a predetermined pattern; and

a projection optical system, which comprises a plurality of projection optical modules that are irradiated with light from said illumination optical system through said mask and arrayed in a predetermined direction, and projects the pattern of said mask onto a photosensitive substrate;

wherein, in order to form a partially overlapping exposure region onto said photosensitive substrate, image planes of said plurality of projection optical modules have a portion that contributes to the formation of said overlapping exposure regions; and

moreover, in order to make position of portions that contribute to formation of said overlapping exposure regions that are next to each other substantially the same in certain focusing direction, further comprising a focus adjustment unit that performs adjustment of position in said certain focusing direction of image plane of each of said plurality of projection optical modules.

13. The exposure apparatus according to claim 12, further comprising:

measuring unit for measuring a light quantity change in light that is emitted to each of the respective said plurality of projection optical modules;

a first calculation unit for calculating a positional change value of each of the respective image plane of said plurality of projection optical modules in said focusing direction based on said light quantity change information;

a second calculation unit for calculating a compensation value corresponding to an amount of each respective image plane curvature of said plurality of projection optical modules based on said light quantity change information; and

a compensation unit for compensating said change value based on said compensation value,

wherein said focus adjusting unit performs said adjustment based on said change value that is compensated.

14. The exposure apparatus according to claim 13, further comprising:

a memory unit which is stored with a correlation between a positional change of each respective image plane of said plurality of projection optical modules in said focusing direction and a light quantity change in light that is emitted to each of respective said plurality of projection optical modules;

wherein said first computation unit computes said change value based on information of said light quantity change that is measured by said measurement unit and information of said correlation of said memory unit.

15. The exposure apparatus according to claim 12, further comprising:

a measurement unit for measuring a light quantity change in light that is emitted to each of respective said plurality of projection optical modules;

a calculation unit for calculating a positional change value of each respective image plane of said plurality of projection optical modules based on information of said light quantity change;

a memory unit which is stored with a compensation value corresponding with each respective image plane curvature of said plurality of projection optical modules; and

a compensation unit for determining said compensation value based on said light quantity change that is measured by said measurement unit and compensating said change value based on this compensation value;

wherein said focus adjustment unit performs said adjustment based on said change value that is compensated.

16. The exposure apparatus according to claim 15, further comprising:

another memory unit which is stored with a correlation between a positional change of each respective image plane in said focusing direction and a light quantity change in light that is emitted to each respective said plurality of projection optical modules;

wherein said calculation unit calculates said change value based on information of said light quantity change that is measured by said measurement unit and information of said correlation of said another memory unit.

17. The exposure apparatus according to claim 12, further comprising:

a measurement unit for measuring a light quantity change in light that is emitted to each of respective said plurality of projection optical modules;

a memory unit which is stored with a correlation between a positional change in portions that contribute to the formation of said partially overlapping exposure regions of each of respective said plurality of projection optical modules and a light quantity change in light that is emitted to each of respective plurality of projection optical modules; and

a calculation unit for calculating a change value in position of portions contributing to formation of said partially overlapping exposure region of each of respective said plurality of projection optical modules in said certain focusing direction based on information of said light quantity change that is measured by said measurement unit and information of said correlation in said memory unit;

wherein said focus adjustment unit performs said adjustment based on said change value.

18. The exposure apparatus according to claim 12, further comprising:

a measurement unit for measuring a light quantity change in light that is emitted to at least one projection optical module of said plurality of projection modules;

a first calculation unit for calculating a change value of position of each respective image plane of said plurality of projection optical modules in said certain focusing direction based on information of said light quantity change;

a second calculation unit for calculating a compensation value corresponding to amount of curvature of each respective image plane of said plurality of projection optical modules based on information of said light quantity change; and

a compensation unit for compensating said change value based on said compensation value;

wherein said focus adjustment unit performs said adjustment based on said change value that is compensated.

19. The exposure apparatus according to claim 12, further comprising:

a measurement unit for measuring light quantity change in light that is emitted to at least one projection optical module of said plurality of projection optical modules;

a calculation unit for calculating a change value in position of each respective image plane of said plurality of projection optical modules in said focusing direction based on information of said light quantity change;

a memory unit which is stored with a compensation value corresponding to amount of curvature of each respective image plane of said plurality of projection optical modules; and

a compensation unit for determining said compensation value based on information of said light quantity change that is measured by said measurement unit and compensating said change value based on said compensation value;

wherein said focus adjustment unit performs said adjustment based on said change value that is compensated.

20. The exposure apparatus according to claim 12, further comprising:

a measurement unit for measuring a light quantity change in light that is emitted to at least one projection optical module of said plurality of projection optical modules;

a memory unit which is stored with a correlation between a positional change of portions that contribute to formation of said partially overlapping exposure regions of each of respective plurality of projection optical modules in said focusing direction and a light quantity change in light that is emitted to each of respective plurality of projection optical modules; and

a calculation unit for calculating change value in position of portions that contribute to formation of said partially overlapping exposure regions of each of respective plurality of projection optical modules based on information of said light quantity change that is measured by said measurement unit and information of said correlation in said memory unit;

wherein said focus adjustment unit performs said adjustment based on said change value.

21. The exposure apparatus according to claim 12, further comprising:

another unit for adjusting a change in optical characteristics other than focusing that develop due to the adjustment of said focus adjustment unit.

69. A microdevice manufacturing method, comprising:

an exposure step of exposing a pattern of said mask using the exposure apparatus according to claim 12 to said photosensitive substrate; and

a developing step of developing said substrate that is exposed.

23. An exposure apparatus manufacturing method, which exposes a pattern of a mask onto a photosensitive substrate using a projection optical system having a plurality of projection optical modules arrayed in a predetermined direction in order to form partially overlapping exposure regions on said photosensitive substrate, and an illumination optical system that illuminates said mask with a predetermined pattern;

said exposure apparatus manufacturing method comprising;

a measurement step of measuring position of image planes of said plurality of projection optical modules in a certain focusing direction; and

an adjustment step of adjusting so that portions that contribute to said partially overlapping exposure regions of image planes of projection optical modules that are next to each other have substantially the same position in said certain focusing direction using measurement information that is obtained in said measurement step.

24. An exposure apparatus manufacturing method, which exposes a pattern of a mask onto a photosensitive substrate using a projection optical system that has a plurality of projection optical modules arrayed in a predetermined direction and an illumination optical system that illuminates said mask with a predetermined pattern;

said exposure apparatus manufacturing method comprising;

a calculation step of pre-calculating a maximum positional change amount for image planes of said plurality of projection optical modules in a certain focusing direction; and

a setting step of setting initial reference image planes of said plurality of projection optical modules based on calculated results of said calculation step.

25. The exposure apparatus manufacturing method according to claim 24, wherein said setting step further comprises an adjustment step of adjusting such that portions that contribute to formation of partially overlapping exposure region in image plane of projection modules that are next to each other have a nearly same position in said certain focusing position.

26. An exposure apparatus, comprising:

an illumination system for illuminating each of respective plurality of regions in a predetermined direction, said regions are included in a pattern formed on a mask; and

a projection optical system, which comprises a plurality of projection optical units arrayed corresponding to said plurality of regions on a mask, and projects the pattern that is formed on said mask to a photosensitive substrate;

wherein

said illumination system forms a secondary light source at a position substantially optically conjugate with each respective pupil plane on said plurality of projection optical units, and has a function for introducing said light from said secondary light source into said mask; and

said illumination system comprises, in order to actually control changes in each respective optical characteristic of said plurality of projection optical units by optical illumination, a setting unit that sets said secondary light source for an optical intensity distribution that is actually higher intensity in peripheral portion therein than in center portion therein.

27. The exposure apparatus according to claim 26, wherein said mask and said photosensitive substrate are moved relative to said projection optical system in a scanning direction that intersects said predetermined direction to scan the pattern formed on said mask onto said photosensitive substrate through said projection optical system.

28. The exposure apparatus according to claim 26, wherein said setting unit sets shape of said secondary light source in an annular shape.

29. The exposure apparatus according to claim 28, wherein said setting unit comprises an annular aperture stop, which has an annular-shaped aperture unit that is positioned at a position that is nearly optically conjunctive with said pupil face in optical path of said illumination system.

30. The exposure apparatus according to claim 28, wherein said setting unit comprises a conical prism for changing incident circular-shaped luminous flux into annular-shaped luminous flux in optical path of said illumination system.

31. The exposure apparatus according to claim 30, wherein said setting unit further comprises an annular aperture stop, which has an annular-shaped aperture unit that is positioned at a position that is nearly optically conjunctive with said pupil face in optical path of said illumination system.

32. The exposure apparatus according to claim 28, wherein said setting unit comprises a diffractive optics for changing incident luminous flux into an annular-shape luminous flux in optical path of said illumination system.

33. The exposure apparatus according to claim 32, wherein said setting unit further comprises an annular aperture stop, which has an annular-shaped aperture unit that is positioned at a position that is nearly optically conjunctive with said pupil face in optical path of said illumination system.

34. The exposure apparatus according to claim 26, wherein said setting unit sets optical intensity distribution of said secondary light source to a desired distribution in order to control amount of change of each respective image plane of said plurality of projection optical units in focusing direction to be an amount smaller than focal depth of said plurality of optical units.

35. The exposure apparatus according to claim 34, wherein said amount of change is controlled to be an amount that is smaller than half said focal depth.

36. The exposure apparatus according to claim 26, wherein said illumination system further comprises another setting unit for setting the outer diameter of said secondary light source when it is converted to a value in said pupil plane to be larger than a predetermined ratio times the clear aperture of said pupil plane.

37. The exposure apparatus according to claim 36, wherein said predetermined ratio is 0.7x.

38. The exposure apparatus according to claim 36, wherein said another setting unit further comprises a diffractive optics for increasing diameter of incident luminous flux in optical path of said illumination system.

39. The exposure apparatus according to claim 36, wherein said setting unit and said another setting unit set optical intensity distribution and outer diameter, respectively, of said secondary light source to a desired distribution and desired outer diameter, respectively, in order to control an amount of change of each respective image plane of said plurality of projection optical units in a certain focusing direction to be an amount smaller than each respective focal depth of said plurality of projection optical units.

40. The exposure apparatus according to claim 39, wherein said amount of change is controlled to be smaller than half of said focal depth.

57. A microdevice manufacturing method, comprising:

an exposure step of exposing said pattern image of said mask onto said photosensitive substrate using an exposure apparatus according to claim 26; and

a development step of developing said substrate exposed.

70. A microdevice manufacturing method, comprising:

an exposure step of exposing a pattern of said mask using the exposure apparatus according to claim 26 to said photosensitive substrate; and

a developing step of developing said substrate that is exposed.

41. An exposure apparatus, comprising:

an illumination system, which illuminates each of a plurality of regions positioned in a given direction on a mask with a pattern, and

a projection optical system, which has a plurality of projection optical units positioned corresponding to said plurality of regions on said mask, and which projects said pattern formed on said mask onto a photosensitive substrate;

wherein;

said illumination system has a function to form a secondary light source in a position substantially optically conjugate with the pupil plane of each of said plurality of projection optical units, and to guide light from said secondary light source to said mask; and

said illumination system comprises a setting unit, which sets the outer diameter of said secondary light source when it is converted to a value on said pupil plane, to greater than 0.7 times the clear aperture of said pupil plane, so that a change in the optical characteristics of each of said plurality of projection optical units, which is caused by irradiation of light, can be controlled for the most part.

42. The exposure apparatus according to claim 41, wherein said mask and said photosensitive substrate are moved relative to said projection optical system in a scanning direction that crosses said given direction, and said pattern formed on said mask is scanning exposed onto said photosensitive substrate through said projection optical system.

43. The exposure apparatus according to claim 41, wherein said setting unit includes a diffractive optic element, which enlarges the diameter of incident luminous flux in an optical path of said illumination system.

44. The exposure apparatus according to claim 41, wherein said setting unit sets the outer diameter of said secondary light source to a desired outer diameter, so that amount of change of image plane of each of said plurality of projection optical units can be controlled to be an amount less than the focal depth of each of said plurality of projection optical units.

45. The exposure apparatus according to claim 44, wherein said change is controlled to be less than half said focal depth.

71. A microdevice manufacturing method, comprising:

an exposure step of exposing a pattern of said mask using the exposure apparatus according to claim 41 to said photosensitive substrate; and

a developing step of developing said substrate that is exposed.

46. An exposure apparatus, comprising:

an illumination system, which illuminates a mask with a pattern; and

a projection optical system, which projects said pattern on said mask onto a photosensitive substrate, wherein;

said illumination system comprises;

a formation unit, which forms a secondary light source in a position substantially conjugate with the pupil plane of said projection optical system, and

an adjustment unit, which adjusts the optical intensity distribution of said secondary light source dependent upon a change in the optical characteristics of said projection optical system.

47. The exposure apparatus according to claim 46, wherein:

said projection optical system includes a plurality of projection optical units;

said illumination system forms on said mask a plurality of illumination fields corresponding to each of said plurality of projection optical units;

said formation unit forms a plurality of secondary light sources corresponding to said plurality of illumination fields, so that light from said secondary light source can be guided to each of said plurality of illumination fields; and

said adjustment unit adjusts the optical intensity distribution of at least one secondary light source of said plurality of secondary light sources dependent upon the optical characteristics of at least one projection optical unit of said plurality of projection optical units.

72. A microdevice manufacturing method, comprising:

an exposure step of exposing a pattern of said mask using the exposure apparatus according to claim 46 to said photosensitive substrate; and

a developing step of developing said substrate that is exposed.

48. An exposure apparatus, which exposes a photosensitive substrate through a mask on which a pattern to be transferred is formed on a plurality of regions in a given direction;

said exposure apparatus comprising;

a projection optical system, which has a plurality of projection optical units respectively positioned corresponding to said plurality of regions, and which projects said pattern onto a photosensitive substrate; and

an illumination system, which forms a secondary light source in a position substantially optically conjugate with the pupil plane of each of said plurality of projection optical units, and which illuminates said mask with light from said secondary light source;

wherein said illumination system includes a setting unit, which sets a optical intensity distribution where a peripheral portion of said secondary light source has a higher intensity than that of a center portion, so that change in the optical characteristics of each of said plurality of projection optical units, which is caused by light from the secondary light source, can be controlled.

49. The exposure apparatus according to claim 48, wherein said setting unit sets the shape of the peripheral portion of said secondary light source to an annular shape.

50. The exposure apparatus according to claim 49, wherein said setting unit includes in an optical path of said illumination system an annular aperture stop with an annular aperture positioned in a location nearly optically conjugate with said pupil plane, and

said annular aperture stop sets the shape of the peripheral portion of said secondary light source to an annular shape.

51. The exposure apparatus according to claim 49, wherein said setting unit includes a conical prism, which transforms in an optical path of said illumination system a circular incident flux to an annular luminous flux, and

said conical prism sets the shape of the peripheral portion of said secondary light source to an annular shape.

52. The exposure apparatus according to claim 51, wherein said setting unit further includes in an optical path of said illumination system an annular aperture stop with an annular aperture positioned in a location nearly optically conjugate with said pupil plane, and

said annular aperture stop sets the shape of the peripheral portion of said secondary light source to an annular shape.

53. The exposure apparatus according to claim 51, wherein said setting unit further includes a unit that allows the diameter of said annular luminous flux to be variable.

54. The exposure apparatus according to claim 49, wherein said setting unit includes a diffractive optic element, which transforms in an optical path of said illumination system incident luminous flux into annular-shaped luminous flux, and

said diffractive optic element sets the shape of the peripheral portion of said secondary light source to an annular shape.

55. The exposure apparatus according to claim 54, wherein:

said setting unit further includes within an optical path of said illumination system an annular aperture stop with an annular aperture positioned in a location nearly optically conjugate with said pupil plane; and

said annular aperture stop sets the shape of the peripheral portion of said secondary light source to an annular shape.

56. The exposure apparatus according to claim 54, wherein said setting unit further includes a unit that allows the diameter of said annular luminous flux to be variable.

73. A microdevice manufacturing method, comprising:

an exposure step of exposing a pattern of said mask using the exposure apparatus according to claim 48 to said photosensitive substrate; and

a developing step of developing said substrate that is exposed.

58. An exposure method, which illuminates a plurality of regions, which are positioned in a given direction on a mask with a pattern, and then projection exposes said pattern formed on said mask onto a photosensitive substrate through a projection optical system with a plurality of projection optical units positioned corresponding to said plurality of regions on said mask;

said exposure method comprising;

an illumination step of illuminating a plurality of regions on said mask by forming a secondary light source in a position nearly optically conjugate with the pupil plane of each of said plurality of projection optical units, and then guiding light from said secondary light source to said mask; and

a setting step of setting the optical intensity distribution of said secondary light source where its peripheral portion has a practically higher intensity than that of its center portion, so that change in the optical characteristics of each of said plurality of projection optical units, which is caused by irradiation of light, can be practically controlled.

59. The exposure method according to claim 58, further comprising:

an additional setting step of setting the outer diameter of said secondary light source when it is converted to a value on said pupil plane, to greater than a given ratio times the clear aperture of said pupil plane.

60. The exposure method according to claim 58, further comprising:

an exposure step of moving in a scanning direction that crosses said given direction said mask and said photosensitive substrate against said projection optical system, and then scan exposing said pattern formed on said mask onto said photosensitive substrate via said projection optical system.

61. An exposure method, which illuminates a plurality of regions, which are positioned in a given direction on a mask, on which a pattern to be transferred is formed, and then projection exposes said pattern formed on said mask onto a photosensitive substrate through a projection optical system with a plurality of projection optical units positioned corresponding to said plurality of regions on said mask;

said exposure method comprising;

an illumination step of illuminating a plurality of regions on said mask by forming a secondary light source in a position nearly optically conjugate with the pupil plane of each of said plurality of projection optical units, and then guiding light from said secondary light source to said mask; and

a setting step of setting the outer diameter of said secondary light source when it is converted to a value on said pupil plane, to greater than 0.7 times the clear aperture of said pupil so that change in the optical characteristics of each of said plurality of projection optical units, which is caused by irradiation of light, can be practically controlled.

63. An exposure method comprising:

an illumination step of illuminating a mask using an illumination optical system; and

a transcription step of transcribing a pattern that is formed on said mask onto a photosensitive substrate;

wherein;

said illumination step includes a step of making an optical intensity distribution at pupil of said illumination optical system higher a peripheral portion than a center portion; and

said transcription step comprising;

a first exposure step, which forms a first exposure region on said photosensitive substrate while making said optical intensity distribution at pupil of said illumination optical system higher said peripheral portion than said center portion; and

a second exposure step, which forms on said photosensitive substrate a second exposure region that partially overlaps said first exposure region while making said optical intensity distribution at pupil of said illumination optical system higher said peripheral portion than said center portion.

64. The exposure method according to claim 63, wherein said transcription step comprises a step of projecting the pattern of said mask onto said photosensitive substrate using a projection optical system.

65. The exposure method according to claim 64, further comprising:

a scanning step of moving said mask and said photosensitive substrate relative to said projection optical system.

66. The exposure method according to claim 65, wherein:

said first exposure step comprises a step of forming a first exposure region on said photosensitive substrate while moving said mask and said photosensitive substrate relative to said projection optical system in said scanning step; and

said second exposure step comprises a step of forming a second exposure region on said photosensitive substrate while moving said mask and said photosensitive substrate relative to said projection optical system in said scanning step.