Method of forming silicon oxide film and forming apparatus thereof
First Claim
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1. A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:
- separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of first gas containing oxygen atoms being formed in the plasma generating region while second gas containing silicon atoms being supplied into the deposition region; and
intentionally controlling first quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms.
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Abstract
In a method of forming a silicon oxide film, the silicon oxide film is formed on a substrate by the use of a plasma CVD method. A plasma-generating region is separated from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms. Plasma of first gas containing oxygen atoms is formed in the plasma-generating region while second gas containing silicon atoms is supplied into the deposition region. First quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms are controlled intentionally.
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14 Claims
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1. A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:
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separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of first gas containing oxygen atoms being formed in the plasma generating region while second gas containing silicon atoms being supplied into the deposition region; and
intentionally controlling first quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An apparatus for forming a silicon oxide film on a substrate by the use of a plasma CVD method, comprising:
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a plasma generating region which forms plasma of first gas containing oxygen atoms;
a deposition region which is placed on the substrate so as to be separated from the plasma generating region and which includes excitation oxygen molecules and excitation oxygen atoms;
a substrate holding mechanism which is provided with the substrate in the deposition region;
a supply unit which supplies second gas containing silicon atoms into the deposition region; and
a control unit which intentionally controls first quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:
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separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of first gas containing oxygen atoms being formed in the plasma generating region while second gas containing silicon atoms being supplied into the deposition region; and
intentionally controlling first emission intensity of the excitation oxygen molecules and second emission intensity of the excitation oxygen atoms. - View Dependent Claims (14)
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Specification