×

Power mosfet and method for forming same using a self-aligned body implant

  • US 20020008284A1
  • Filed: 04/27/2001
  • Published: 01/24/2002
  • Est. Priority Date: 07/20/2000
  • Status: Active Grant
First Claim
Patent Images

1. A method for making a MOSFET comprising:

  • forming a trench in a semiconductor layer;

    forming a gate dielectric layer lining the trench;

    forming a gate conducting layer in a lower portion of the trench;

    forming a dielectric layer to fill an upper portion of the trench;

    removing portions of the semiconductor layer laterally adjacent the dielectric layer so that an upper portion thereof extends outwardly from the semiconductor layer;

    forming spacers laterally adjacent the outwardly extending upper portion of the dielectric layer; and

    using the spacers as a self-aligned mask for defining source/body contact regions.

View all claims
  • 8 Assignments
Timeline View
Assignment View
    ×
    ×