MONOLITHIC HIGH-Q INDUCTANCE DEVICE AND PROCESS FOR FABRICATING THE SAME

• US 20020008301A1
• Filed: 12/15/1998
• Published: 01/24/2002
• Est. Priority Date: 07/13/1998
• Status: Abandoned Application

• Current Assignee: Winbond Electronics Corporation
• Original Assignee: Winbond Electronics Corporation
• Inventors: LIOU, PING, YUNG, HAO-CHIEN, SHIANG, SHING SHING
• Application Number:
  US09/212,319
• Publication Number:
  US 20020008301A1
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors

Abstract

The present invention provides a high-Q inductance device and a process for fabricating the same. The inductance device is formed on a semiconductor substrate and includes a first insulating layer, a second insulating layer, and a conducting coil. The first and second insulating layers are covered on different surfaces of the semiconductor substrate, respectively, and the second insulating layer has a lower dielectric constant than the first insulating layer. The conducting coil is formed on the second insulating layer. According to the present invention, the parasitic capacitance between the conducting coil and the substrate can be decreased by means of forming a conducting coil on an insulating layer having a low dielectric constant.

Claims

1. An inductance device formed on a semiconductor substrate, comprising:

a first insulating layer and a second insulating layer, which are covered on different surfaces of the semiconductor substrate respectively, the second insulating layer having a lower dielectric constant than the first insulating layer; and

a conducting coil formed on the second insulating layer.

2. The inductance device as claimed in claim 1, wherein the first insulating layer is silicon oxide.

3. The inductance device as claimed in claim 2, wherein the second insulating layer has a dielectric constant between 2 and 3.7.

4. The inductance device as claimed in claim 3, wherein the second insulating layer is a silicon or carbon based organic polymer film.

5. The inductance device as claimed in claim 1, wherein the conducting coil includes a plurality of spiral conducting lines.

6. The inductance device as claimed in claim 5, wherein the adjacent spiral conducting lines are spaced apart from a dielectric layer and are electrically connected to each other by a via hole formed in the dielectric layer.

7. The inductance device as claimed in claim 1, wherein the semiconductor substrate is defined to form a trench, and the second insulating layer is filled into the trench.

8. A process for fabricating an inductance device, comprising the following steps of:

(a) providing a semiconductor substrate;

(b) forming a first insulating layer and a second insulating layer on different surfaces of the semiconductor substrate respectively, wherein the second insulating layer has a lower dielectric constant than the first insulating layer; and

(c) forming a conducting coil on the second insulating layer.

9. The process as claimed in claim 8, wherein the first insulating layer is silicon oxide.

10. The process as claimed in claim 9, wherein the second insulating layer has a dielectric constant between 2 and 3.7.

11. The process as claimed in claim 10, wherein the second insulating layer is an silicon or carbon based organic polymer film.

12. The process as claimed in claim 10, wherein the conducting coil includes a plurality of spiral conducting lines.

13. The process as claimed in claim 8, wherein the adjacent spiral conducting lines are spaced apart from a dielectric layer and are electrically connected to each other by a via hole formed in the dielectric layer.

14. The process as claimed in claim 8, wherein step (b) includes:

forming a first insulating layer on the semiconductor substrate;

defining the first insulating layer to form an opening; and

forming the second insulating layer within the opening.

15. The process as claimed in claim 8, wherein step (b) includes:

forming a first insulating layer on the semiconductor substrate;

defining the first insulating layer to form an opening so as to expose the semiconductor substrate;

defining the exposed semiconductor substrate to form a trench along the opening; and

forming a second insulating layer within the opening and the trench.