Functional device unit and method of producing the same

• US 20020008325A1
• Filed: 05/10/2001
• Published: 01/24/2002
• Est. Priority Date: 05/11/2000
• Status: Active Grant

• Current Assignee: Mitutoyo Corporation
• Original Assignee: Mitutoyo Corporation
• Inventors: Tominaga, Atsushi
• Granted Patent: US 6,600,231 B2
• Time in Patent Office: Days
• US Class Current: 257/778
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01056 Barium [Ba]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15157 : Top view
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An implementation base (10) is formed of a silicon substrate (11) having a recess (12) on a surface. Wire layers (13) are formed on the silicon substrate (11), continuously extending from the bottom of and via the side of the recess (12) to the top surface. A semiconductor chip (14) is implemented in the recess (12) of the implementation base (10) in a flip-chip manner to configure a functional device unit.

Claims

1. A functional device unit, comprising:

an insulating substrate having a recess formed in a surface thereof;

a wiring layer patterned on the surface of said substrate, said wiring layer continuously extending from the bottom of said recess to the top surface of said substrate via the side of said recess; and

a semiconductor device implemented in said recess of said substrate in a flip-chip manner.

2. The functional device unit according to claim 1,

wherein said substrate is a silicon substrate, and an in sulating film is formed at least on the bottom and the side of said recess, and the top surface of the substrate.

3. The functional device unit according to claim 1, wherein said functional device unit is a sensor head of an optical encoder, said semiconductor device is a photodetector chip, and said recess of said substrate has a plurality of slits formed on the bottom for configuring optical gratings opposite to a photoreceiving surface of said photodetector chip.

4. The functional device unit according to claim 1, wherein said functional device unit is a sensor head of an optical encoder, said semiconductor device is a photodetector chip on which a photodetector array is formed, and said recess of said substrate has an aperture open to a photoreceving surface of said photodetector chip.

5. The functional device unit according to claim 1, wherein said semiconductor device is sealed in a plastic.

6. The functional device unit according to claim 1, wherein said functional device unit is a hybrid photo-detector unit, and wherein a semiconductor light emitting device chip, a photodetector chip, and a signal processing IC chip for processing an output signal from said photodetector chip are implemented in said recess of said substrate in a flip-chip manner.

7. A method of producing a base for implementing a functional device, comprising the steps of:

forming a recess in a surface of an insulating substrate;

burying an insulating layer in said recess to planarize said substrate, said insulating layer consisting of a material different from said substrate;

forming a photoresist mask on said substrate planarized with said insulating layer buried, said photoresist mask having a groove for wire-burying, said groove continuously extending from the top of said insulating layer to the outside of said recess;

etching said insulating layer to remove parts exposing through said groove of said photoresist mask;

depositing a conductive layer over said resist mask remaining on said substrate to form a wiring layer in said groove, said wiring layer continuously extending from the bottom of and via the side of said recess to the top surface of said substrate; and

removing said photoresist mask and said insulating layer successively.

8. The method according to claim 7, wherein said substrate is a silicon substrate, the method further comprising the step of forming a silicon dioxide film on said silicon substrate by thermal oxidation, after the recess forming and prior to the insulating layer burying.

9. The method according to claim 7, wherein said insulating layer is an organic layer.

10. The method according to claim 7, wherein said insulating layer is an inorganic layer.

11. A method of producing a functional device unit, comprising the steps of:

forming a recess in a surface of an insulating substrate;

burying an insulating layer in said recess to planarize said substrate, said insulating layer consisting of a material different from said substrate;

forming a photoresist mask on said substrate planarized with said insulating layer buried, said photoresist mask having a groove for wire-burying, said groove continuously extending from the top of said insulating layer to the outside of said recess;

etching said insulating layer to remove parts exposing through said groove of said photoresist mask;

depositing a conductive layer over said resist mask remaining on said substrate to formawiring layer in said groove, said wiring layer continuously extending from the bottom of and via the side of said recess to the top surface of said substrate;

removing said photoresist mask and said insulating layer successively; and

implementing at least one semiconductor device in said recess of said substrate in a flip-chip manner.

12. The method according to claim 11, wherein said substrate is a silicon substrate, the method further comprising the step of forming a silicon dioxide film on the silicon substrate by thermal oxidation after the recess forming and prior to the insulating layer burying.

13. The method according to claim 11, wherein said insulating layer is an organic layer.

14. The method according to claim 11, wherein said insulating layer is an inorganic layer.

15. The method according to claim 11, wherein said functional device unit is a sensor head of an optical encoder, and said semiconductor device is a photodetector device chip, said method further comprising the step of forming slits for configuring optical gratings on the bottom of said recess of said substrate prior to implementation of said semiconductor device.

16. The method according to claim 11, wherein said functional device unit is a sensor head of an optical encoder, and said semiconductor device is a photodetector device chip on which a photodetector device array is formed, the method further comprising the step of forming an aperture open to a receiving surface of said photodetector device chip on the bottom of said recess of said substrate prior to implementation of said semiconductor device.