Semiconductor circuit device having power and ground lines adapted for high-frequency operation

• US 20020008597A1
• Filed: 07/10/2001
• Published: 01/24/2002
• Est. Priority Date: 07/11/2000
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Kanji Otsuka, Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation), Sanyo Electric Company Limited (Panasonic Holdings Corporation), LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.), ROHM Co., Ltd., Sony Corporation (Sony Group Corp.), Tamotsu Usami, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Fujitsu Limited, Hitachi, Ltd., Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Kanji Otsuka, Mitsubishi Electric Corporation, NEC Corporation, OKI Electric Industry Company Limited, Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation), Sanyo Electric Company Limited (Panasonic Holdings Corporation), ROHM Co., Ltd., Sony Corporation (Sony Group Corp.), Tamotsu Usami, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Usami, Tamotsu, Otsuka, Kanji
• Granted Patent: US 6,625,005 B2
• Time in Patent Office: Days
• US Class Current: 333/33
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15173 in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

In a semiconductor chip are arranged power pads, ground pads and signal pads. A ground line is provided which is formed as one in the vicinity of the chip and branches off at some distance from the chip. Signal lines and power lines are each formed over one of the branched ground lines. The signal lines and the power lines are extended radially together with the underlying ground lines. Each of the signal lines and the power lines are extended together with the corresponding ground line to form a stacked pair line.

Claims

1. A semiconductor circuit device comprising:

a transmission line composed of a power line and a ground line which have substantially the same thickness and are formed one above the other, the power line and the ground line are electrically separated each other; and

an electronic circuit coupled with the transmission line to receive a supply voltage through the transmission line.

2. The semiconductor circuit device according to claim 1, wherein the transmission line has a characteristic impedance that is substantially equal to or lower than the impedance of the entire electronic circuit.

3. The semiconductor circuit device according to claim 1, wherein the power line and the ground line are each formed of a conductive layer and their thickness is substantially equal to the width of the conductive layer.

4. The semiconductor circuit device according to claim 1, wherein the transmission line composed of the power line and the ground line is formed in a semiconductor integrated circuit chip.

5. The semiconductor circuit device according to claim 1, wherein the transmission line composed of the power line and the ground line is formed on a wiring board.

6. The semiconductor circuit device according to claim 1, wherein the transmission line composed of the power line and the ground line has the structure of a power-ground pair transmission line up to its end.

7. The semiconductor circuit device according to claim 1, further comprising a bypass capacitor coupled with the power supply section of the electronic circuit or the vicinity thereof for holding the amount of charge several times to several tens of times larger than the amount of charge to be supplied to the electronic circuit.

8. The semiconductor circuit device according to claim 7, wherein the bypass capacitor is provided in the midst of the transmission line.

9. The semiconductor circuit device according to claim 8, wherein the bypass capacitor forms part of the transmission line.

10. The semiconductor circuit device according to claim 7, wherein the total of leakage inductances associated with the bypass capacitor and an interconnection to which the bypass capacitor is coupled is not greater than 1/A (GHz)×

100 ps=XpH where A is the frequency of a clock applied to the electronic circuit and X is an inductance value obtained by calculation.

11. The semiconductor circuit device according to claim 7, wherein the bypass capacitor comprises at least two plate-like conductive layers which have a width approximating the width of the conductive layers forming the power line and the ground line and are formed one above the other with an insulating layer interposed therebetween, and a plurality of electrodes which are provided along one of that pair of sides of the at least two conductive layers which are opposed to each other in the direction of length of the conductive layers, which is nearer to the electronic circuit, one set of the electrodes being coupled to the power line and the other set being coupled to the ground line.

12. The semiconductor circuit device according to claim 8, wherein the bypass capacitor comprises at least two plate-like conductive layers which have a width approximating the width of the conductive layers forming the power line and the ground line and are formed one above the other with an insulating layer interposed therebetween, and a plurality of electrodes which are provided along that pair of sides of the at least two conductive layers which are opposed to each other in the direction of length of the conductive layers, the electrodes including ones coupled to the power line and ones coupled to the ground line.

13. The semiconductor circuit device according to claim 1, wherein the electronic circuit includes a transistor gate circuit having a transistor that is powered from the transmission line and connected to a signal line, and a resistor element connected in series between the power supply side of the transistor gate circuit and the transmission line, the resistance Rps of the resistor element being set to satisfy Ron+Rps=Z0 where Ron is the on resistance of the transistor and Z0 is the characteristic impedance of the signal line.

14. A semiconductor circuit device comprising:

a transmission line composed of a power line and a ground line which have substantially the same thickness and are formed one above the other, the power line and the ground line are electrically separated each other;

a plurality of transistors each having a current path having its one end coupled to the power line of the transmission line; and

a plurality of signal lines corresponding in number to the transistors, each of the signal lines being coupled to the other end of the current path of the corresponding transistor.

15. The semiconductor circuit device according to claim 14, wherein the characteristic impedance Z0 ps of the transmission line is set such that Z0 ps≦

Z0/N where Z0 is the characteristic impedance of the signal lines and N is the number of signal lines.

16. The semiconductor circuit device according to claim 14, wherein the power line and the ground line are each formed of a conductive layer and their thickness is substantially equal to the width of the conductive layer.

17. The semiconductor circuit device according to claim 14, wherein the transmission line composed of the power line and the ground line is formed in a semiconductor integrated circuit chip.

18. The semiconductor circuit device according to claim 14, wherein the transmission line composed of the power line and the ground line is formed on a wiring board.

19. The semiconductor circuit device according to claim 14, wherein the transmission line composed of the power line and the ground line has the structure of a power-ground pair transmission line up to its end.

20. The semiconductor circuit device according to claim 14, further comprising a bypass capacitor coupled with a power supply section of the electronic circuit or the vicinity thereof for holding the amount of charge several times to several tens of times larger than the amount of charge to be supplied to the electronic circuit.

21. The semiconductor circuit device according to claim 20, wherein the bypass capacitor is provided in the midst of the transmission line.

22. The semiconductor circuit device according to claim 21, wherein the bypass capacitor forms part of the transmission line.

23. The semiconductor circuit device according to claim 20, wherein the bypass capacitor comprises at least two plate-like conductive layers which have a width approximating the width of the conductive layers forming the power line and the ground line and are formed one above the other with an insulating layer interposed therebetween, and a plurality of electrodes which are provided along one of that pair of sides of the at least two conductive layers which are opposed to each other in the direction of length of the conductive layers, which is nearer to the electronic circuit, one set of the electrodes being coupled to the power line and the other set being coupled to the ground line.