GATE INSULATOR PROCESS FOR NANOMETER MOSFETS
First Claim
1. A method for forming a semiconductor insulating layer, comprising the steps of:
- providing a semiconductor wafer having a silicon substrate and having a layer of sacrificial oxide thereon;
implanting nitrogen ions through said sacrificial oxide layer and into said silicon substrate;
removing said sacrificial oxide layer; and
depositing a layer of high-dielectric constant insulating material on said implanted nitrided silicon substrate.
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Accused Products
Abstract
Methods of manufacturing insulating materials and semiconductor devices incorporating films having high dielectric constants are disclosed, in which the high-dielectric constant material is deposited on a semiconductor surface that has been treated to prevent the formation of interfacial oxide between the semiconductor substrate and the high dielectric constant material. The methods of this invention involve implantation of nitrogen ions through the sacrificial oxide layer, thereby forming a nitrided silicon substrate underneath the sacrificial oxide. The sacrificial oxide can then removed, and thereafter layers of high dielectric constant materials can be deposited on the nitrided silicon substrate without the formation of interfacial oxide. Manufacturing devices using the methods of this invention can result in the formation of an overall insulating film having a dielectric constant that more closely reflects the dielectric constant of the high-dielectric constant material. Therefore, the insulating films made using the methods of this invention can be made thinner than conventional insulating films, thus permitting the manufacture of semiconductor products having increasing device density and increasing efficiency, and decreasing manufacturing costs.
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Citations
26 Claims
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1. A method for forming a semiconductor insulating layer, comprising the steps of:
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providing a semiconductor wafer having a silicon substrate and having a layer of sacrificial oxide thereon;
implanting nitrogen ions through said sacrificial oxide layer and into said silicon substrate;
removing said sacrificial oxide layer; and
depositing a layer of high-dielectric constant insulating material on said implanted nitrided silicon substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 25, 26)
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16. A method for manufacturing a semiconductor device, comprising the steps of:
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providing a semiconductor wafer comprising a silicon substrate having a layer of sacrificial oxide thereon;
forming shallow trenches on said wafer;
filling said trenches with an oxide insulating material thereby forming field oxide regions;
implanting nitrogen ions through said sacrificial oxide, thereby forming an implanted nitrided silicon substrate;
removing said sacrificial oxide; and
forming gate insulators between said field oxide regions. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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Specification