Remote plasma mixer

• US 20020011214A1
• Filed: 12/22/2000
• Published: 01/31/2002
• Est. Priority Date: 04/12/1999
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Gerald M. Cox, Mohammad Kamarehi
• Inventors: Kamarehi, Mohammad, Cox, Gerald M.
• Granted Patent: US 6,352,050 B2
• Time in Patent Office: Days
• US Class Current: 118/723ME
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32256 Tuning means
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 1/4622 using waveguides

Abstract

A remote plasma generator, coupling microwave frequency energy to a gas and delivering radicals to a downstream process chamber, includes several features which, in conjunction, enable highly efficient radical generation. In the illustrated embodiments, more efficient delivery of oxygen and fluorine radicals translates to more rapid photoresist etch or ash rates. A single-crystal, one-piece sapphire applicator and transport tube minimizes recombination of radicals in route to the process chamber and includes a bend to avoid direct line of sight from the glow discharge to the downstream process chamber. Microwave transparent cooling fluid within a cooling jacket around the applicator enables high power, high temperature plasma production. Additionally, dynamic impedance matching via a sliding short at the terminus of the microwave cavity reduces power loss through reflected energy. At the same time, a low profile microwave trap produces a more dense plasma to increase radical production. In one embodiment, fluorine and oxygen radicals are separately generated and mixed just upstream of the process chamber, enabling individually optimized radical generation of the two species.

Claims

1. A plasma generator in a semiconductor processing reactor, comprising a microwave choke including quarter-wavelength shorted coaxial conductors, the shorted coaxial conductors defining a choke enclosure, the enclosure filled with a solid material having a dielectric constant greater than about 3.

2. The plasma generator of claim 1, wherein the solid material comprises a ceramic.

3. The plasma generator of claim 1, wherein the solid material has a dielectric constant greater than about 5.

4. The plasma generator of claim 1, wherein the solid material has a dielectric constant of about 9.

5. A microwave plasma generator in a semiconductor processing reactor, comprising:

a microwave power source;

a microwave energy waveguide extending from the energy source at a first end to a second end;

an microwave cavity in communication with the second end of the waveguide;

a gas carrier tube extending from an upstream gas source through the cavity; and

a cooling jacket surrounding the carrier tube within the cavity, the cooling jacket filled with a perfluorinated cooling fluid transparent to microwave energy.

6. The plasma generator of claim 5, wherein the cooling fluid comprises Galden™

.

7. The plasma generator of claim 5, wherein the gas carrier tube comprises a sapphire section within the cavity.

8. The plasma generator of claim 5, wherein the upstream gas source comprises fluorine.

9. The plasma generator of claim 7, wherein the microwave power source can couple at least about 3,000 W of power to the gas within the microwave cavity.

10. A plasma generator comprising a hollow sapphire tube extending from a gas source through a microwave cavity to a process chamber, the tube including an elbow joint defining an angle of greater than about 35°

between the microwave cavity and the process chamber.

11. The plasma generator of claim 10, further comprising a microwave power source coupled to the microwave cavity.

12. The plasma generator of claim 11, wherein the microwave power source can couple at least about 3,000 W of microwave energy at about 2,450 MHz to gas within the sapphire tube.

13. The plasma generator of claim 10, wherein the gas source comprises fluorine.

14. The plasma generator of claim 10, wherein the elbow joint defines an angle of about 90°

.

15. A remote plasma generator for generating a plasma within a gas carrier tube upstream of a process chamber, the generator comprising:

a microwave energy generator;

a microwave energy pathway from the generator, including;

an isolator module in communication with the generator, the isolator module configured to protect the energy generator from reflected power;

a waveguide communicating at a proximal end with the isolator module; and

a microwave cavity communicating at a proximal end with a distal end of the waveguide, the cavity including a gas influent port and a radical effluent port,

a sliding short defining a variable distal end of the microwave cavity, the sliding short dynamically controlled to match impedance of the microwave cavity with the waveguide.

16. The remote plasma generator of claim 15, wherein the microwave energy pathway includes a directional coupler measuring reflected energy directed toward the microwave energy generator, the directional coupler generating signals controlling movement of the sliding short.

17. The remote plasma generator of claim 15, wherein preset tuning is conducted via a fixed tuning knob within the waveguide and fine tuning is conducted dynamically by the sliding short.

18. A dual plasma source downstream reactor, comprising:

a first plasma source cavity;

a first plasma energy source coupled to the plasma source cavity;

a first gas carrier tube extending through the first plasma source cavity;

a second plasma source cavity;

a second plasma energy source coupled to the plasma source cavity;

a second gas carrier tube extending through the first plasma source cavity;

a plasma mixer chamber in fluid communication with each of the first gas carrier tube and the second gas carrier tube downstream of first and second plasma source cavities; and

a process chamber downstream of and in fluid communication with the mixer chamber.

19. The reactor of claim 18, further comprising a first perforated baffle plate positioned between the process chamber and the mixer chamber.

20. The reactor of claim 19, further comprising a second perforated baffle plate positioned between the process chamber and the mixer chamber, wherein the first and second baffle plates have non-aligned perforations.

21. The reactor of claim 18, wherein the first gas carrier tube comprises sapphire and the second gas carrier tube comprises quartz.

22. The reactor of claim 21, wherein the first gas carrier tube communicates with a source of fluorine and the second gas carrier tube communicates with a source of oxygen.