Adhesion type area sensor and display device having adhesion type area sensor

• US 20020011972A1
• Filed: 01/17/2001
• Published: 01/31/2002
• Est. Priority Date: 01/31/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 6,747,638 B2
• Time in Patent Office: Days
• US Class Current: 345/74.1
• CPC Class Codes: G09G 2360/142 the light being detected by light detection means within each pixel
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H01L 31/14 the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
• CPC Class Codes: H04N 25/534 depending on the spectral component
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor
• CPC Class Codes: H10K 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors

Abstract

A lightweight, thin, small size adhesion type area sensor is provided. A pixel of the area sensor has an EL element as a light source, and a photodiode as a photoelectric conversion element. A TFT is used with the adhesion type area sensor for controlling the operation of the EL element and the photodiode.

Claims

1. An adhesion type area sensor comprising a sensor portion, having a plurality of pixels, formed on a sensor substrate, wherein:

the plurality of pixels have a photodiode, an EL element, and a plurality of thin film transistors.

2. A sensor according to claim 1, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

3. A sensor according to claim 1, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the cathode electrode and the anode electrode.

4. An adhesion type area sensor comprising a sensor portion, having a plurality of pixels, formed on a substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, and a selection TFT;

the switching TFT and the EL driver TFT control light emitted from the EL element;

the light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and

the photodiode, the reset TFT, the buffer TFT, and the selection TFT generate an image signal from the light irradiated to the photodiode.

5. A sensor according to claim 4, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

6. A sensor according to claim 4, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the cathode electrode and the anode electrode.

11. A sensor according to claim 5 , wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the anode electrode and the cathode electrode.

12. A sensor according to claim 11, wherein the reset TFT is an n-channel TFT, and the buffer TFT is a p-channel TFT, when the anode electrode of the photodiode is connected to the drain region of the reset TFT.

13. A sensor according to claim 11, wherein the reset TFT is a p-channel TFT, and the buffer TFT is an n-channel TFT, when the cathode electrode of the photodiode is connected to the drain region of the reset TFT.

7. An adhesion type area sensor comprising a sensor portion, having a plurality of pixels, formed on a substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, a selection TFT;

a source signal line;

a gate signal line;

an electric power source supply line for maintaining a constant electric potential;

a reset gate signal line;

a sensor gate signal line;

a sensor output wiring connected to a constant electric current power supply; and

a sensor electric power source line for maintaining a constant electric potential;

a gate electrode of the switching TFT is connected to the gate signal line;

one of a source region and a drain region of the switching TFT is connected to the source signal line, and the other is connected to a gate electrode of the EL driver TFT;

one of a source region and a drain region of the EL driver TFT is connected to the electric power source supply line, and the other is connected to the EL element;

a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and

an image signal generated from the light irradiated to the photodiode is input to the sensor output wiring.

8. A sensor according to claim 7, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

9. A sensor according to claim 8, wherein the EL driver TFT is a p-channel TFT when the anode of the EL element is connected to the source region or the drain region of the EL driver TFT.

10. A sensor according to claim 8, wherein the EL driver TFT is a n-channel TFT when the cathode of the EL element is connected to the source region or the drain region of the EL driver TFT.

14. An adhesion type area sensor comprising a sensor portion, having a plurality of pixels, formed on a substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, a selection TFT;

a source signal line;

a gate signal line;

an electric power source supply line for maintaining a constant electric potential;

a reset gate signal line;

a sensor gate signal line;

a sensor output wiring connected to a constant electric current power supply; and

a sensor electric power source line for maintaining a constant electric potential;

a gate electrode of the switching TFT is connected to the gate signal line;

one of a source region and a drain region of the switching TFT is connected to the source signal line, and the other is connected to a gate electrode of the EL driver TFT;

one of a source region and a drain region of the EL driver TFT is connected to the electric power source supply line, and the other is connected to the EL element;

a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

the polarity of the switching TFT and selection TFT are the same;

light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and

an image signal generated from the light irradiated to the photodiode is input to the sensor output wiring.

15. A sensor according to claim 14, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

16. A sensor according to claim 15, wherein the EL driver TFT is a p-channel TFT when the anode of the EL element is connected to the source region or the drain region of the EL driver TFT.

17. A sensor according to claim 15, wherein the EL driver TFT is a n-channel TFT when the cathode of the EL element is connected to the source region or the drain region of the EL driver TFT.

18. A sensor according to claim 14 , wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the anode electrode and the cathode electrode.

19. A sensor according to claim 18, wherein the reset TFT is an n-channel TFT, and the buffer TFT is a p-channel TFT, when the anode electrode of the photodiode is connected to the drain region of the reset TFT.

20. A sensor according to claim 18, wherein the reset TFT is a p-channel TFT, and the buffer TFT is an n-channel TFT, when the cathode electrode of the photodiode is connected to the drain region of the reset TFT.

37. A device according to claim 15, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the cathode electrode and the anode electrode.

38. A device according to claim 15, wherein the display device has a touch pen and a touch panel.

21. An adhesion type area sensor comprising a sensor portion, having a plurality of pixels, formed on a substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, a selection TFT;

a source signal line;

a gate signal line;

an electric power source supply line for maintaining a constant electric potential;

a reset gate signal line;

a sensor gate signal line;

a sensor output wiring connected to a constant electric current power supply; and

a sensor electric power source line for maintaining a constant electric potential;

a gate electrode of the switching TFT is connected to the gate signal line;

one of a source region and a drain region of the switching TFT is connected to the source signal line, and the other is connected to a gate electrode of the EL driver TFT;

one of a source region and a drain region of the EL driver TFT is connected to the electric power source supply line, and the other is connected to the EL element;

a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

the reset TFT and the selection TFT are switched from an ON state to an OFF state, or from an OFF state to an ON state at the same time in accordance with the signal input to the reset gate signal line and the sensor gate signal line;

one of the reset TFT and the selection TFT is in an ON state when the other is in an OFF state;

light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and

an image signal generated from the light irradiated to the photodiode is input to the sensor output wiring.

22. A sensor according to claim 21, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

23. A sensor according to claim 22, wherein the EL driver TFT is a p-channel TFT when the anode of the EL element is connected to the source region or the drain region of the EL driver TFT.

24. A sensor according to claim 22, wherein the EL driver TFT is a n-channel TFT when the cathode of the EL element is connected to the source region or the drain region of the EL driver TFT.

25. A sensor according to claim 21, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the anode electrode and the cathode electrode.

27. A sensor according to claim 25, wherein the reset TFT is a p-channel TFT, and the buffer TFT is an n-channel TFT, when the cathode electrode of the photodiode is connected to the drain region of the reset TFT.

26. A sensor according to claim 125, wherein the reset TFT is an n-channel TFT, and the buffer TFT is a p-channel TFT, when the anode electrode of the photodiode is connected to the drain region of the reset TFT.

28. An adhesion type area sensor comprising a sensor portion, having a plurality of pixels, formed on a substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, a selection TFT;

a source signal line;

a gate signal line;

an electric power source supply line for maintaining a constant electric potential;

a reset gate signal line;

a sensor gate signal line;

a sensor output wiring connected to a constant electric current power supply; and

a sensor electric power source line for maintaining a constant electric potential;

a gate electrode of the switching TFT is connected to the gate signal line;

one of a source region and a drain region of the switching TFT is connected to the source signal line, and the other is connected to a gate electrode of the EL driver TFT;

one of a source region and a drain region of the EL driver TFT is connected to the electric power source supply line, and the other is connected to the EL element;

a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the gate signal line;

the polarity of the switching TFT and the selection TFT are the same;

the reset TFT and the selection TFT are switched from an ON state to an OFF state, or from an OFF state to an ON state at the same time in accordance with the signal input to the reset gate signal line and the sensor gate signal line;

one of the reset TFT and the selection TFT is in an ON state when the other is in an OFF state;

light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and

an image signal generated from the light irradiated to the photodiode is input to the sensor output wiring.

29. A sensor according to claim 28, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

30. A sensor according to claim 29, wherein the EL driver TFT is a p-channel TFT when the anode of the EL element is connected to the source region or the drain region of the EL driver TFT.

31. A sensor according to claim 29, wherein the EL driver TFT is a n-channel TFT when the cathode of the EL element is connected to the source region or the drain region of the EL driver TFT.

32. A sensor according to claim 28, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the anode electrode and the cathode electrode.

33. A sensor according to claim 32, wherein the reset TFT is an n-channel TFT, and the buffer TFT is a p-channel TFT, when the anode electrode of the photodiode is connected to the drain region of the reset TFT.

34. A sensor according to claim 32, wherein the reset TFT is a p-channel TFT, and the buffer TFT is an n-channel TFT, when the cathode electrode of the photodiode is connected to the drain region of the reset TFT.

35. A display device comprising a sensor portion, having a plurality of pixels, formed on a substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, and a selection TFT;

light emitted from the EL element is controlled in accordance with the switching TFT and the EL driver TFT; and

the sensor portion displays an image in accordance with the light emitted from the EL element;

or the light emitted from the EL element is irradiated to the photodiode by being reflected on a subject, and an image signal is generated from the light irradiated to the photodiode in accordance with the photodiode, the reset TFT, the buffer TFT, and the selection TFT.

36. A device according to claim 35, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

39. A display device comprising a sensor portion, having a plurality of pixels, formed on a substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, a selection TFT;

a source signal line;

a gate signal line;

an electric power source supply line for maintaining a constant electric potential;

a reset gate signal line;

a sensor gate signal line;

a sensor output wiring connected to a constant electric current power supply; and

a sensor electric power source line for maintaining a constant electric potential;

a gate electrode of the switching TFT is connected to the gate signal line;

one of a source region and a drain region of the switching TFT is connected to the source signal line, and the other is connected to a gate electrode of the EL driver TFT;

one of a source region and a drain region of the EL driver TFT is connected to the electric power source supply line, and the other is connected to the EL element;

a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

light emitted from the EL element is controlled in accordance with the switching TFT and the EL driver TFT; and

the sensor portion displays an image in accordance with the light emitted from the EL element;

or the light emitted from the EL element is irradiated to the photodiode by being reflected on a subject, and an image signal is generated from the light irradiated to the photodiode in accordance with the photodiode, the reset TFT, the buffer TFT, and the selection TFT.

40. A device according to claim 39, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

41. A device according to claim 40, wherein the EL driver TFT is a p-channel TFT when the anode of the EL element is connected to the source region or the drain region of the EL driver TFT.

42. A device according to claim 40, wherein the EL driver TFT is a n-channel TFT when the cathode of the EL element is connected to the source region or the drain region of the EL driver TFT.

43. A device according to claim 39, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the anode electrode and the cathode electrode.

44. A device according to claim 43, wherein the reset TFT is an n-channel TFT, and the buffer TFT is a p-channel TFT, when the anode electrode of the photodiode is connected to the drain region of the reset TFT.

45. A device according to claim 43, wherein the reset TFT is an p-channel TFT, and the buffer TFT is a n-channel TFT, when the cathode electrode of the photodiode is connected to the drain region of the reset TFT.

46. A display device comprising a sensor portion, having a plurality of pixels, formed on a substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, a selection TFT;

a source signal line;

a gate signal line;

an electric power source supply line for maintaining a constant electric potential;

a reset gate signal line;

a sensor gate signal line;

a sensor output wiring connected to a constant electric current power supply; and

a sensor electric power source line for maintaining a constant electric potential;

a gate electrode of the switching TFT is connected to the gate signal line;

one of a source region and a drain region of the switching TFT is connected to the source signal line, and the other is connected to a gate electrode of the EL driver TFT;

one of a source region and a drain region of the EL driver TFT is connected to the electric power source supply line, and the other is connected to the EL element;

a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

the reset TFT and the selection TFT are switched from an ON state to an OFF state, or from an OFF state to an ON state at the same time in accordance with the signal input to the reset gate signal line and the sensor gate signal line;

one of the reset TFT and the selection TFT is in an ON state when the other is in an OFF state;

light emitted from the EL element is controlled in accordance with the switching TFT and the EL driver TFT; and

the sensor portion displays an image in accordance with the light emitted from the EL element;

or the light emitted from the EL element is irradiated to the photodiode by being reflected by a subject, and an image signal is generated from the light irradiated to the photodiode in accordance with the photodiode, the reset TFT, the buffer TFT, and the selection TFT.

47. A device according to claim 46, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

48. A device according to claim 47, wherein the EL driver TFT is a p-channel TFT when the anode of the EL element is connected to the source region or the drain region of the EL driver TFT.

49. A device according to claim 47, wherein the EL driver TFT is a n-channel TFT when the cathode of the EL element is connected to the source region or the drain region of the EL driver TFT.

50. A device according to claim 46, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the anode electrode and the cathode electrode.

51. A device according to claim 50, wherein the reset TFT is an n-channel TFT, and the buffer TFT is a p-channel TFT, when the anode electrode of the photodiode is connected to the drain region of the reset TFT.

52. A device according to claim 50, wherein the reset TFT is an p-channel TFT, and the buffer TFT is a n-channel TFT, when the cathode electrode of the photodiode is connected to the drain region of the reset TFT.

53. A device according to claim 46, wherein the display device has a touch pen and a touch panel.

54. A display device comprising a sensor portion, having a plurality of pixels, formed on a sensor substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, a selection TFT;

a source signal line;

a gate signal line;

an electric power source supply line for maintaining a constant electric potential;

a reset gate signal line;

a sensor gate signal line;

a sensor output wiring connected to a constant electric current power supply; and

a sensor electric power source line for maintaining a constant electric potential;

a gate electrode of the switching TFT is connected to the gate signal line;

one of a source region and a drain region of the switching TFT is connected to the source signal line, and the other is connected to a gate electrode of the EL driver TFT;

one of a source region and a drain region of the EL driver TFT is connected to the electric power source supply line, and the other is connected to the EL element;

a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power source line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the gate signal line;

the polarity of the switching TFT and the selection TFT are the same;

light emitted from the EL element is controlled in accordance with the switching TFT and the EL driver TFT; and

the sensor portion displays an image in accordance with the light emitted from the EL element;

or the light emitted from the EL element is irradiated to the photodiode by being reflected by a subject, and an image signal is generated from the light irradiated to the photodiode in accordance with the photodiode, the reset TFT, the buffer TFT, and the selection TFT.

55. A device according to claim 54 wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

56. A device according to claim 55, wherein the EL driver TFT is a p-channel TFT when the anode of the EL element is connected to the source region or the drain region of the EL driver TFT.

57. A device according to claim 55, wherein the EL driver TFT is a n-channel TFT when the cathode of the EL element is connected to the source region or the drain region of the EL driver TFT.

58. A device according to claim 54, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the anode electrode and the cathode electrode.

59. A device according to claim 58, wherein the reset TFT is an n-channel TFT, and the buffer TFT is a p-channel TFT, when the anode electrode of the photodiode is connected to the drain region of the reset TFT.

60. A device according to claim 58, wherein the reset TFT is an p-channel TFT, and the buffer TFT is a n-channel TFT, when the cathode electrode of the photodiode is connected to the drain region of the reset TFT.

61. A device according to claim 54, wherein the display device has a touch pen and a touch panel.

62. A display device comprising a sensor portion, having a plurality of pixels, formed on a sensor substrate, wherein:

the plurality of pixels have a photodiode, an EL element, a switching TFT, an EL driver TFT, a reset TFT, a buffer TFT, a selection TFT;

a source signal line;

a gate signal line;

an electric power source supply line for maintaining a constant electric potential;

a reset gate signal line;

a sensor gate signal line;

a sensor output wiring connected to a constant electric current power supply; and

a sensor electric power source line for maintaining a constant electric potential;

a gate electrode of the switching TFT is connected to the gate signal line;

one of a source region and a drain region of the switching TFT is connected to the source signal line, and the other is connected to a gate electrode of the EL driver TFT;

one of a source region and a drain region of the EL driver TFT is connected to the electric power source supply line, and the other is connected to the EL element;

a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power source line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the gate signal line;

the polarity of the switching TFT and the selection TFT are the same;

the reset TFT and the selection TFT are switched from an ON state to an OFF state, or from an OFF state to an ON state at the same time in accordance with the signal input to the reset gate signal line and the sensor gate signal line;

one of the reset TFT and the selection TFT is in an ON state when the other is in an OFF state;

light emitted from the EL element is controlled in accordance with the switching TFT and the EL driver TFT; and

the sensor portion displays an image in accordance with the light emitted from the EL element;

or the light emitted from the EL element is irradiated to the photodiode by being reflected by a subject, and an image signal is generated from the light irradiated to the photodiode in accordance with the photodiode, the reset TFT, the buffer TFT, and the selection TFT.

63. A device according to claim 62, wherein the EL element has an anode, a cathode, and an EL layer formed between the anode and the cathode.

64. A device according to claim 63, wherein the EL driver TFT is a p-channel TFT when the anode of the EL element is connected to the source region or the drain region of the EL driver TFT.

65. A device according to claim 63, wherein the EL driver TFT is a n-channel TFT when the cathode of the EL element is connected to the source region or the drain region of the EL driver TFT.

66. A device according to claim 62, wherein the photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer formed between the anode electrode and the cathode electrode.

67. A device according to claim 66, wherein the reset TFT is an n-channel TFT, and the buffer TFT is a p-channel TFT, when the anode electrode of the photodiode is connected to the drain region of the reset TFT.

68. A device according to claim 66, wherein the reset TFT is an p-channel TFT, and the buffer TFT is a n-channel TFT, when the cathode electrode of the photodiode is connected to the drain region of the reset TFT.

69. A device according to claim 62, wherein the display device has a touch pen and a touch panel.