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High voltage device having polysilicon region in trench and fabricating method thereof

  • US 20020013029A1
  • Filed: 05/24/2001
  • Published: 01/31/2002
  • Est. Priority Date: 07/28/2000
  • Status: Active Grant
First Claim
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1. A high voltage device, comprising:

  • an N-type drift region and a P-type drift region formed on a substrate;

    a gate region defined at an intersection between the N and P-type drift region, the gate region having an oxide film deposited on an upper portion of the gate region and a gate electrode formed on the oxide film;

    a source region being defined in one of the N and P-type drift regions, the source region having a first trench filled with a first polysilicon layer, a first high density diffusion layer formed on an upper portion of the first polysilicon layer and a source electrode formed on the high density diffusion layer; and

    a drain region being defined in the other of the N and P-type drift regions, the drain region having a second high density diffusion layer formed on an upper portion of the drain region and a drain electrode formed on the second high density diffusion layer.

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