Integrated structure of inductances with shared values on a semiconductor substrate
First Claim
1. An integrated circuit including a first inductance structure on a semiconductor substrate, intended for operating at frequencies greater than several hundreds of MHz, comprising:
- a first inductance formed by a conductive track having first and second ends and having first and second terminals connected, respectively, to the first and second ends of the conductive track;
a second inductance formed by the conductive track between the second terminal and an intermediate point of the conductive track connected to a third terminal, said second and third terminals forming two terminals of the second inductance; and
means for setting the third terminal to high impedance when the first inductance is used.
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Accused Products
Abstract
An integrated circuit including a structure of inductances on a semiconductor substrate, intended for operating at frequencies greater than several hundreds of MHz, including a first inductance formed by a conductive track and having first and second terminals respectively connected to each of the two ends of the conductive track, including a second inductance formed by the conductive track between the second terminal and any intermediary point of the conductive track connected to a third terminal, said second and third terminals forming the two terminals of the second inductance, and means for setting the third terminal to high impedance when the first inductance is used.
16 Citations
14 Claims
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1. An integrated circuit including a first inductance structure on a semiconductor substrate, intended for operating at frequencies greater than several hundreds of MHz, comprising:
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a first inductance formed by a conductive track having first and second ends and having first and second terminals connected, respectively, to the first and second ends of the conductive track;
a second inductance formed by the conductive track between the second terminal and an intermediate point of the conductive track connected to a third terminal, said second and third terminals forming two terminals of the second inductance; and
means for setting the third terminal to high impedance when the first inductance is used. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9)
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8. The circuit of 6, further including first and second processing chains, the first chain including a first mixer adapted to using a first frequency and the second chain including a second mixer adapted to using a second frequency, the first terminal of the first structure of inductances being connected to the first mixer, the second terminal of the first structure of inductances being connected to a circuit ground, and the third terminal of the first structure of inductances being connected to the second mixer.
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10. A method, comprising:
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receiving a first signal modulated on a first carrier frequency;
demodulating the first signal using a circuit that includes first and second inductors formed on a semiconductor substrate, the first and second inductors including first and second conductive tracks, each track having first and second terminals connected to the respective conductive tracks at first and second ends thereof;
receiving a second signal modulated on a second carrier frequency; and
demodulating the second signal using a circuit that includes third and fourth inductors formed on a semiconductor substrate, where the third inductor is a portion of the first inductor, defined by a segment of the first conductive track between the second terminal of the first conductive track and a third terminal of the first conductive track, connected to an intermediate point of the first conductive track, and the fourth inductor is a portion of the second inductor, defined by a segment of the second conductive track between the second terminal of the second conductive track and a third terminal of the second conductive track, connected to an intermediate point of the second conductive track. - View Dependent Claims (11, 12, 13, 14)
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Specification