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Integrated structure of inductances with shared values on a semiconductor substrate

  • US 20020013134A1
  • Filed: 07/30/2001
  • Published: 01/31/2002
  • Est. Priority Date: 07/31/2000
  • Status: Active Grant
First Claim
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1. An integrated circuit including a first inductance structure on a semiconductor substrate, intended for operating at frequencies greater than several hundreds of MHz, comprising:

  • a first inductance formed by a conductive track having first and second ends and having first and second terminals connected, respectively, to the first and second ends of the conductive track;

    a second inductance formed by the conductive track between the second terminal and an intermediate point of the conductive track connected to a third terminal, said second and third terminals forming two terminals of the second inductance; and

    means for setting the third terminal to high impedance when the first inductance is used.

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