Volatile precursors for deposition of metals and metal-containing films

• US 20020013487A1
• Filed: 02/22/2001
• Published: 01/31/2002
• Est. Priority Date: 04/03/2000
• Status: Abandoned Application

• Current Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Original Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Inventors: Farnia, Morteza, Roberts, David Allen, Norman, John Anthony Thomas
• Application Number:
  US09/791,409
• Publication Number:
  US 20020013487A1
• Time in Patent Office: Days
• US Class Current: 556/7
• CPC Class Codes: C07F 1/005 without C-Metal linkages
• CPC Class Codes: C07F 1/08 Copper compounds
• CPC Class Codes: C07F 5/02 Boron compounds
• CPC Class Codes: C07F 7/10 containing nitrogen having a Si-N linkage
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals. A structural representation of the compounds of this invention is shown below:

wherein M and M′ are each a metal such as Cu, Ag, Au and Ir; X and X′ can be N or O; Y and Y′ can be Si, C; Sn, Ge, or B; and Z and Z′ can be C, N, or O. Substituents represented by R1, R2, R3, R4, R5, R6, R1′, R2′, R3′, R4′, R5′, and R6′ will vary depending on the ring atom to which they are attached. This invention is also directed to depositing metal and metal-containing films on a substrate, under ALD or CVD conditions, using the above novel compounds as precursors.

Claims

1. A compound represented by the structure:

2. The compound of claim 1 wherein M and M′

are each Cu.

3. The compound of claim 1 wherein X and X′

are each N.

4. The compound of claim 3 wherein Y and Y′

are each Si.

5. The compound of claim 4 wherein Z and Z′

are each C.

6. A compound represented by the structure:

7. The compound of claim 6 wherein R1, R2, R3, R4, R1′

, R2′

, R3′

, and R4′

are each methyl; and

R5, R6, R5′

, and R6′

are each H.

8. The compound of claim 6 wherein R1 , R2, R3, R4, R1′

, R2′

, R3′

, and R4′

are each methyl;

R5 and R5′

are each trimethylsilyl; and

R6 and R6′

are each H.

9. A method of forming a metal or metal-containing film on a substrate, under ALD conditions, comprising

(a) reacting a metal substrate, a metal containing substrate, a metalloid substrate, or a metalloid-containing substrate surface with an appropriate reagent to give a surface bearing hydroxyl OH or oxide oxygen;

(b) chemisorbing a layer of a composition comprising a metal complex of structure [1] onto the surface bearing hydroxyl OH or oxide oxygen to form a newly metal functionalized surface;

wherein M and M′

are each a metal;

X and X′

are each N or O;

Y and Y′

are each Si, C, Sn, Ge, B, or Al;

Z and Z′

are each C, N, or O;

R1, R2, R1′

, and R2′

are each independently H, an alkyl, an alkenyl, an alkynyl, a partially fluorinated alkyl, an aryl, an alkyl-substituted aryl, a partially fluorinated aryl, a fluoralkyl-substituted aryl;

a trialkylsiloxy, a triarylsiloxy, a trialkylsilyl;

or a triarylsilyl;

R3, R4, R3′

, and R4′

are each independently H, an alkyl, a partially fluorinated alkyl, a trialkyl siloxy, an aryl, an alkyl-substituted aryl, a partially fluorinated aryl, a fluoroalkyl-substituted aryl, an alkoxy, a trialkylsiloxy, a triarylsiloxy, a trialkylsilyl, a triarylsilyl, a bis(trialkylsilyl)amido, a bis(triarylsilyl)amido, or a halogen; and

R5, R6, R5′

, and R6′

are each independently H, an alkyl, an alkenyl, an alkynyl, a partially fluorinated alkyl, an aryl, an alkyl-substituted aryl, a partially fluorinated aryl, a fluoralkyl-substituted aryl, a halogen, a trialkylsiloxy, a triarylsiloxy, a trialkylsilyl, a triarylsilyl, a trialkylsilanoate, or an alkoxy;

provided that when X and ‘

X’

are each O, there is no substitution at R6 and R6′

;

further provided that when Z and Z′

are each O, there is no substitution at R5, R6, R5′

, or R6′

;

said alkyl and alkoxide having 1 to 8 carbons;

said alkenyl and alkynyl having 2 to 8 carbons; and

said aryl having 6 carbons;

(c) oxidizing or hydroxylating the newly metal functionalized surface to form a metal oxide layer;

(d) repeating the above steps (b) and (c) as needed to build a required number of metal oxide layers for a thickness which can be chemically reduced; and

(e) reducing the metal oxide layers to form a smooth metal film; and

(f) optionally repeating steps (a) through (e) to grow a thicker metal film.

10. The method of claim 9 wherein said substrate is silicon or germanium.

11. The method of claim 10 wherein M and M′

are selected from the group consisting of Cu, Ag, Au, and Ir.

12. The method of claim 10 wherein M and M′

are each Cu.

13. The method of claim 12 wherein X and X′

are each N.

14. The method of claim 13 wherein Y and Y′

are each Si.

15. The method of claim 14 wherein Z and Z′

are each C.

16. The method of claim 10 wherein M and M′

are different metals in each layer when there is more than one layer.

17. The method of claim 10 wherein the composition of (b) also comprises another metal precursor selected from the groups consisting of a metal β

-diketonate;

a metal alkoxide;

a metal amide;

a metal bis(alkoxide);

a metal bis (β

-ketonate);

a metal bis (β

-ketoimide);

a metal (β

-diimide); and

a metal (amidinate).

18. A method of forming a metal or metal-containing film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, a precursor represented by the structure:

19. The method of claim 18 wherein M and M′

are selected from the group consisting of selected from the group consisting of Cu, Ag, Au, Os, and Ir.

20. The method of claim 18 wherein M and M′

are each Cu.

21. The method of claim 20 wherein X and X′

are each N.

22. The method of claim 21 wherein Y and Y′

are each Si.

23. The method of claim 22 wherein Z and Z′

are each C.

24. The method of claim 18 wherein M and M′

are each Pt, Pd, Rh, or Ru.