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Semiconductor device and method of manufacturing the same

  • US 20020014634A1
  • Filed: 07/25/2001
  • Published: 02/07/2002
  • Est. Priority Date: 07/26/2000
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • depositing a thin film containing a metal and capable of bonding with oxygen on a silicon substrate;

    forming a metal oxide film on said thin film; and

    oxidizing said thin film by heat treatment to form a gate insulating film comprising said oxidized thin film and said metal oxide film.

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