Method for manufacturing a structure with curved surfaces

• US 20020015259A1
• Filed: 06/18/2001
• Published: 02/07/2002
• Est. Priority Date: 06/19/2000
• Status: Abandoned Application

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Nishihara, Munekazu
• Application Number:
  US09/881,687
• Publication Number:
  US 20020015259A1
• Time in Patent Office: Days
• US Class Current: 360/126
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: G11B 5/10 Structure or manufacture of housings or shields for heads
• CPC Class Codes: G11B 5/102 Manufacture of housing
• CPC Class Codes: G11B 5/1871 Shaping or contouring of the transducing or guiding surface
• CPC Class Codes: G11B 5/3103 Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing

Abstract

A structure used as an electronic device including a magnetic head, an optical device, or precision parts has a structure body. A thin film is formed on one surface of the structure body by sputtering. The structure body is curved by an inner stress in the thin film, thereby the one surface and the other surface opposite to the one surface being formed into curved surfaces.

Claims

1. A method for manufacturing a structure with curved surfaces comprising:

providing a structure body;

forming a thin film on one surface of the structure body by sputtering so that the structure body is curved by an inner stress generated in the thin film, thereby the one surface of the structure body and the other surface of the structure body are formed into the curved surfaces.

2. A method according to claim 1, wherein the thin film is composed of a material having an atomic weight of not less than 40 and not more than 240.

3. A method according to claim 1, wherein curvatures of the surfaces are adjusted by a pressure during the formation of the thin film by sputtering.

4. A method according to claim 3, wherein by setting the pressure higher than a predetermined pressure, the other surface opposite to the one surface on which the thin film is formed becomes a convex curved surface;

and

wherein by setting the pressure lower than the predetermined pressure, the one surface on which the thin film is formed becomes a convex curved surface.

5. A method according to claim 1, wherein the formation of the thin film by sputtering is executed in an evacuated chamber, and

wherein curvatures of the surfaces are adjusted by an initial pressure in the evacuated chamber before the formation of the thin film.

6. A method according to claim 5, wherein by setting the initial pressure higher than a predetermined pressure, the other surface opposite to the one surface on which the thin film is formed becomes a convex curved surface;

and

wherein by setting the initial pressure lower than the predetermined pressure, the one surface on which the thin film is formed becomes a convex curved surface.

7. A method according to claim 1, wherein the formation of the thin film by sputtering is executed by appliance of a voltage to a target opposite to the structure body, and wherein curvatures of the surfaces are adjusted by the voltage applied to the target.

8. A method according to the claim 7, wherein by setting the voltage higher than a predetermined voltage, the one surface on which the thin film is formed becomes a convex curved surface;

and

wherein by setting the voltage lower than a predetermined voltage, the other surface opposite to the one surface on which the thin film is formed becomes a convex curved surface.

9. A method according to claim 1, wherein the structure body is cooled during the formation of the thin film.

10. A method according to claim 1, wherein the structure body is an Al₂O₃-TiC substrate, a temperature of the structure body during sputtering is not less than 20°

C. and not more than 50°

C., a pressure in an evacuated chamber during sputtering is not less than 0.5 Pa and not more than 5.0 Pa, and the thin film is composed of tantalum or Chromium.

11. A method for manufacturing a magnetic head, comprising:

providing a magnetic head substrate with a single or a plurality of built-in devices; and

forming a thin film on one surface of the magnetic head substrate by sputtering so that the magnetic head substrate is curved by an inner stress generated in the thin film, thereby the one surface and the other surface of the magnetic head substrate are formed into curved surfaces, convex one of which acts as a head surface.

12. A method according to claim 11 further comprising, cutting the magnetic head substrate to separate into a plurality of magnetic heads after the formation of the thin film on the one side of the magnetic head substrate.

14. A structure according to claim 13, wherein the thin film is composed of a material having an atomic weight of not less than 40 and not more than 240.

15. A structure according to claim 13, wherein the structure body is an Al₂O₃-TiC substrate and the thin film is composed of tantalum or chromium.

13. A structure with curved surfaces comprising:

a structure body; and

a thin film formed on one surface of the structure body by sputtering,

wherein the structure body is curved by an inner stress of the thin film, thereby the one surface of the structure body and the other surface of the structure body opposite to the one surface are formed into the curved surfaces.

16. A magnetic head comprising:

a magnetic head substrate with a single or a plurality of built-in devices; and

a thin film formed on one surface of the magnetic head substrate by sputtering,

wherein the magnetic head substrate is curved by an inner stress of the thin film, thereby the one surface of the magnetic head substrate or the other surface of the magnetic head substrate opposite to the one surface is formed into a convex curved surface acts as a head surface.