Photoelectric conversion device and photo cell

• US 20020015881A1
• Filed: 06/13/2001
• Published: 02/07/2002
• Est. Priority Date: 06/13/2000
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Nakamura, Yoshisada, Tadakuma, Yoshio, Kagawa, Yoshikatsu
• Application Number:
  US09/879,150
• Publication Number:
  US 20020015881A1
• Time in Patent Office: Days
• US Class Current: 429/111
• CPC Class Codes: H01G 9/2009 Solid electrolytes
• CPC Class Codes: H01G 9/2031 comprising titanium oxide, e.g. TiO2 H01G9/2036 takes precedence
• CPC Class Codes: H01M 14/005 Photoelectrochemical storage cells light sensitive devices H01G9/20, semiconductors sensitive to light H01L31/00
• CPC Class Codes: Y02E 10/542 Dye sensitized solar cells

Abstract

A photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of irradiating semiconductor particles with electromagnetic wave or a step of heating semiconductor particles at a temperature of 50° C. or higher and lower than 350° C. under a pressure of 0.05 MPa or lower.

Claims

1. A photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of irradiating semiconductor particles with electromagnetic wave.

2. The photoelectric conversion device according to claim 1, wherein the electromagnetic wave is at least one selected from the group consisting of ultraviolet light, microwaves and infrared light.

3. The photoelectric conversion device according to claim 1, wherein the step of irradiating is conducted under a pressure of 0.05 MPa or lower.

4. The photoelectric conversion device according to claim 1, wherein the method further comprises a step of heating semiconductor particles at a temperature of 50°

C. or higher and lower than 350°

C.

5. The photoelectric conversion device according to claim 1, wherein the electromagnetic wave is ultraviolet light having a wavelength of 400 nm or shorter.

6. The photoelectric conversion device according to claim 1, wherein the electromagnetic wave is infrared light having a wavelength at which water molecules have an absorption.

7. The photoelectric conversion device according to claim 1, wherein the step of irradiating is conducted in the presence of a precursor of semiconductor particles.

8. The photoelectric conversion device according to claim 7, wherein the solid content of the precursor of semiconductor particles is {fraction (5/1000)} to ⅕

based on the weight of the semiconductor particles.

9. The photoelectric conversion device according to claim 7, wherein the precursor of semiconductor particles is an alkoxide compound of a metal constituting the semiconductor, a halogen compound of the metal, or a compound obtained by completely or partially hydrolyzing a compound of the metal having a hydrolyzable group and completely or partially polymerizing the hydrolysis product.

10. The photoelectric conversion device according to claim 1, wherein the semiconductor particles constituting the particulate semiconductor layer comprise those having a particle size of 10 nm or greater and those having a particle size smaller than 10 nm.

11. The photoelectric conversion device according to claim 1, wherein the particulate semiconductor layer is sensitized with a dye.

12. The photoelectric conversion device according to claim 1, wherein the semiconductor particles constituting the particulate semiconductor layer are particles of titanium oxide, zinc oxide, tin oxide, tungsten oxide, niobium oxide, iron oxide, an alkaline earth metal titanate, an alkali metal titanate or a composite thereof.

13. The photoelectric conversion device according to claim 1, wherein the particulate semiconductor layer is provided on a substrate made of a polymer.

14. A photo cell comprising the photoelectric conversion device according to claim 1.

16. The photoelectric conversion device according to claim 15, wherein the step of heating is conducted in the presence of a precursor of semiconductor particles.

17. The photoelectric conversion device according to claim 15, wherein the semiconductor particles constituting the particulate semiconductor layer comprise those having a particle size of 10 nm or greater and those having a particle size smaller than 10 nm.

18. The photoelectric conversion device according to claim 15, wherein the particulate semiconductor layer is provided on a substrate made of a polymer.

19. A photo cell comprising the photoelectric conversion device according to claim 15.

20. The photoelectric conversion device according to claim 15, wherein the semiconductor particles constituting the particulate semiconductor layer are particles of titanium oxide, zinc oxide, tin oxide, tungsten oxide, niobium oxide, iron oxide, an alkaline earth metal titanate, an alkali metal titanate or a composite thereof.

15. A photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of heating semiconductor particles at a temperature of 50°

C. or higher and lower than 350°

C. under a pressure of 0.05 MPa or lower.