Method and apparatus for treating low k dielectric layers to reduce diffusion
First Claim
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1. A method for processing a substrate, comprising:
- depositing a low dielectric constant layer on the substrate in a processing chamber;
introducing a processing gas into the processing chamber;
generating a plasma of the processing gas in the processing chamber; and
exposing the low dielectric constant layer to the plasma of the processing gas.
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Abstract
Methods and apparatus for depositing low dielectric constant layers that are resistant to oxygen diffusion and have low oxygen contents are provided. The layers may be formed by exposing a low dielectric constant layer to a plasma of an inert gas to densify the low dielectric constant layer, by exposing the low dielectric constant layer to a nitrating plasma to form a passivating nitride surface on the layer, or by depositing a thin passivating layer on the low dielectric constant layer to reduce oxygen diffusion therein. The low dielectric constant layer may be deposited and treated in situ.
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Citations
31 Claims
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1. A method for processing a substrate, comprising:
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depositing a low dielectric constant layer on the substrate in a processing chamber;
introducing a processing gas into the processing chamber;
generating a plasma of the processing gas in the processing chamber; and
exposing the low dielectric constant layer to the plasma of the processing gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 25, 26, 27, 28, 29, 30, 31)
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13. A method for processing a substrate, comprising:
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depositing a silicon carbide layer on the substrate in a processing chamber;
introducing a processing gas selected from the group of an inert gas, a nitrating gas, or combinations thereof, into the processing chamber;
generating a plasma of the processing gas in the processing chamber; and
modifying a surface of the silicon carbide layer by exposing the silicon carbide layer to the plasma of the processing gas to form a passivating surface on the silicon carbide layer.
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24. A method for forming a low dielectric constant barrier layer on a substrate, comprising:
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depositing a silicon carbide layer on the substrate; and
depositing a passivating layer comprising silicon and nitrogen on the silicon carbide layer.
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Specification